@conference{
author = "Jović, Vesna and Smiljanić, Milče and Lamovec, Jelena and Popović, M.",
year = "2012",
abstract = "Step-like structures oriented along LT 110 > or LT 110 > directions on {100} oriented Si substrates are first etched with mask following maskless etching in 30 wt. % KOH solution in water at 80 degrees C. The step structures investigated by maskless etching are convex prismatic edges bounded by {100} and {111} planes for LT 110 > oriented steps or only {100} planes for LT 110 > oriented steps. Experimental results are used to verify the nature of {hkl} cutting planes that are developed at the convex corners of the steps during maskless anisotropic etching. From analytical relations and experimental results, the ratio between the etching rates for the {hkl} (fast-etching plane at the edge step) and {100} planes is found for both step orientations.",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
journal = "28th International Conference on Microelectronics - Proceedings, MIEL 2012",
title = "Microfabrication by Mask-maskless wet Anisotropic Etching for Realization of Multilevel Structures in {100} Oriented Si",
pages = "139-142",
doi = "10.1109/MIEL.2012.6222817"
}