TY  - JOUR
AU  - Počuča-Nešić, Milica
AU  - Branković, Goran
AU  - Bernik, Slavko
AU  - Rečnik, Aleksander
AU  - Vasiljević-Radović, Dana
AU  - Branković, Zorica
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1009
AB  - Lanthanum nickelate (LNO) is a perovskite oxide material with metallic conductivity in a wide temperature range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were spin coated onto Si-substrates with amorphous layer of SiO2. Deposited layers were thermally treated from the substrate side with low heating rate (1°/min) up to 700°C and finally annealed for 10 hours. Results of AFM and FESEM showed that films are very smooth (Ra = 4 nm), dense, crack-free and with large square-shaped grains (170 nm). According to FESEM and TEM results the obtained four-layered film was only 65 nm thin. EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation. It was concluded that the presence of SiO2 layer on Si substrate prevents epitaxial or oriented growth of LNO.
PB  - University of Novi Sad
T2  - Processing and Application of Ceramics
T1  - TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition
VL  - 6
IS  - 2
SP  - 103
EP  - 107
DO  - 10.2298/PAC1202103P
ER  - 

@article{
author = "Počuča-Nešić, Milica and Branković, Goran and Bernik, Slavko and Rečnik, Aleksander and Vasiljević-Radović, Dana and Branković, Zorica",
year = "2012",
abstract = "Lanthanum nickelate (LNO) is a perovskite oxide material with metallic conductivity in a wide temperature range which makes it suitable for application as electrode material for thin films. In this paper LNO thin films were prepared by polymerizable complex method from the diluted citrate solutions. Precursor solutions were spin coated onto Si-substrates with amorphous layer of SiO2. Deposited layers were thermally treated from the substrate side with low heating rate (1°/min) up to 700°C and finally annealed for 10 hours. Results of AFM and FESEM showed that films are very smooth (Ra = 4 nm), dense, crack-free and with large square-shaped grains (170 nm). According to FESEM and TEM results the obtained four-layered film was only 65 nm thin. EBSD and XRD analyses confirmed polycrystalline microstructure of the films without preferential orientation. It was concluded that the presence of SiO2 layer on Si substrate prevents epitaxial or oriented growth of LNO.",
publisher = "University of Novi Sad",
journal = "Processing and Application of Ceramics",
title = "TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition",
volume = "6",
number = "2",
pages = "103-107",
doi = "10.2298/PAC1202103P"
}

Počuča-Nešić, M., Branković, G., Bernik, S., Rečnik, A., Vasiljević-Radović, D.,& Branković, Z.. (2012). TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition. in Processing and Application of Ceramics
University of Novi Sad., 6(2), 103-107.
https://doi.org/10.2298/PAC1202103P

Počuča-Nešić M, Branković G, Bernik S, Rečnik A, Vasiljević-Radović D, Branković Z. TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition. in Processing and Application of Ceramics. 2012;6(2):103-107.
doi:10.2298/PAC1202103P .

Počuča-Nešić, Milica, Branković, Goran, Bernik, Slavko, Rečnik, Aleksander, Vasiljević-Radović, Dana, Branković, Zorica, "TEM and FESEM investigation of lanthanum nickelate thin films obtained by chemical solution deposition" in Processing and Application of Ceramics, 6, no. 2 (2012):103-107,
https://doi.org/10.2298/PAC1202103P . .