TY  - CONF
AU  - Randjelović, Danijela
AU  - Smiljanić, Milče M.
AU  - Lazić, Žarko
AU  - Popović, Mirjana
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5827
AB  - MEMS senzori na bazi Zebekovog efekta su tema 
dugogodišnjeg istraživanja u IHTM-CMTM-u. Oni su 
posebno interesantni zbog činjenice da imaju raznovrsnu 
primenu (senzori protoka, senzori vakuuma, termalni 
konvertori, IC detektori, akcelerometri, inklinometri, 
biološki i hemijski senzori, senzori vrste gasa, senzori 
sastava binarne smeše gasova, ...). U IHTM-u je do sada 
realizovano nekoliko varijanti ovog tipa senzora. Prilikom 
razvoja ovih senzora teži se da se iskoriste postojeći 
tehnološki procesi razvijeni za IHTM piezorezistivne senzore 
pritiska. Tako je poslednja generacija senzora sa 
temoparovima tehnološki kompatibilna sa IHTM Si 
piezorezistivnim senzorima pritiska. U medjuvremenu je 
osvojena tehnologija izrade SOI piezorezistivnih senzora 
pritiska koja će biti primenjena za realizaciju sledeće 
generacije termalnih senzora. U ovom radu je dat osvrt na 
dizajn, tehnologiju izrade i poboljšanje performansi koje se 
očekuje kod SOI višenamenskih senzora sa termoparovima.
AB  - MEMS sensors based on Seebeck effect have been a part of the long-term research at IHTM-CMTM. They are of special interest because of the fact that they have broad  range of applications (flow sensors, vacuum sensors, thermal converters, IR detectors, accelerometers, inclinometers, 
biological and chemical sensors, gas type sensors, binary gas mixture composition sensors, ...). Till now several types of this kind of sensors have been developed at IHTM. During the development process we aim at using aleady existing technological processes developed for IHTM piezoresistive pressure sensors. Thus, the last generation of thermopile-based sensors is technologicaly compatible with IHTM Si piezoresisitve pressure sensors. In the meantime, a 
technology of SOI piezoresistive pressure sensors have been conquered and it will be applied for realization of the next generation of thermal sensors. This paper gives overview of the design, fabrication technology and performance improvement expected to be reached with SOI multipurpose thermopile-based sensors.
PB  - ETRAN Society
C3  - Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012, Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor
T1  - Poboljšanje performansi višenamenskog senzora sa termoparovima primenom sopstvene MEMS tehnologije za izradu SOI piezorezistivnih senzora pritiska
T1  - Enhancement of the performance of multipurpose thermopile-based sensor using proprietary mems technology for soi piezoresistive pressure sensors fabrication
SP  - MO3.3-1
EP  - MO3.3-4
UR  - https://hdl.handle.net/21.15107/rcub_cer_5827
ER  - 

@conference{
author = "Randjelović, Danijela and Smiljanić, Milče M. and Lazić, Žarko and Popović, Mirjana",
year = "2012",
abstract = "MEMS senzori na bazi Zebekovog efekta su tema 
dugogodišnjeg istraživanja u IHTM-CMTM-u. Oni su 
posebno interesantni zbog činjenice da imaju raznovrsnu 
primenu (senzori protoka, senzori vakuuma, termalni 
konvertori, IC detektori, akcelerometri, inklinometri, 
biološki i hemijski senzori, senzori vrste gasa, senzori 
sastava binarne smeše gasova, ...). U IHTM-u je do sada 
realizovano nekoliko varijanti ovog tipa senzora. Prilikom 
razvoja ovih senzora teži se da se iskoriste postojeći 
tehnološki procesi razvijeni za IHTM piezorezistivne senzore 
pritiska. Tako je poslednja generacija senzora sa 
temoparovima tehnološki kompatibilna sa IHTM Si 
piezorezistivnim senzorima pritiska. U medjuvremenu je 
osvojena tehnologija izrade SOI piezorezistivnih senzora 
pritiska koja će biti primenjena za realizaciju sledeće 
generacije termalnih senzora. U ovom radu je dat osvrt na 
dizajn, tehnologiju izrade i poboljšanje performansi koje se 
očekuje kod SOI višenamenskih senzora sa termoparovima., MEMS sensors based on Seebeck effect have been a part of the long-term research at IHTM-CMTM. They are of special interest because of the fact that they have broad  range of applications (flow sensors, vacuum sensors, thermal converters, IR detectors, accelerometers, inclinometers, 
biological and chemical sensors, gas type sensors, binary gas mixture composition sensors, ...). Till now several types of this kind of sensors have been developed at IHTM. During the development process we aim at using aleady existing technological processes developed for IHTM piezoresistive pressure sensors. Thus, the last generation of thermopile-based sensors is technologicaly compatible with IHTM Si piezoresisitve pressure sensors. In the meantime, a 
technology of SOI piezoresistive pressure sensors have been conquered and it will be applied for realization of the next generation of thermal sensors. This paper gives overview of the design, fabrication technology and performance improvement expected to be reached with SOI multipurpose thermopile-based sensors.",
publisher = "ETRAN Society",
journal = "Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012, Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor",
title = "Poboljšanje performansi višenamenskog senzora sa termoparovima primenom sopstvene MEMS tehnologije za izradu SOI piezorezistivnih senzora pritiska, Enhancement of the performance of multipurpose thermopile-based sensor using proprietary mems technology for soi piezoresistive pressure sensors fabrication",
pages = "MO3.3-1-MO3.3-4",
url = "https://hdl.handle.net/21.15107/rcub_cer_5827"
}

Randjelović, D., Smiljanić, M. M., Lazić, Ž.,& Popović, M.. (2012). Poboljšanje performansi višenamenskog senzora sa termoparovima primenom sopstvene MEMS tehnologije za izradu SOI piezorezistivnih senzora pritiska. in Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012, Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor
ETRAN Society., MO3.3-1-MO3.3-4.
https://hdl.handle.net/21.15107/rcub_cer_5827

Randjelović D, Smiljanić MM, Lazić Ž, Popović M. Poboljšanje performansi višenamenskog senzora sa termoparovima primenom sopstvene MEMS tehnologije za izradu SOI piezorezistivnih senzora pritiska. in Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012, Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor. 2012;:MO3.3-1-MO3.3-4.
https://hdl.handle.net/21.15107/rcub_cer_5827 .

Randjelović, Danijela, Smiljanić, Milče M., Lazić, Žarko, Popović, Mirjana, "Poboljšanje performansi višenamenskog senzora sa termoparovima primenom sopstvene MEMS tehnologije za izradu SOI piezorezistivnih senzora pritiska" in Zbornik radova 56. Konferencije za ETRAN, 11-14. juna 2012, Zlatibor / Proceedings 56th ETRAN Conference, June 11-14, 2012, Zlatibor (2012):MO3.3-1-MO3.3-4,
https://hdl.handle.net/21.15107/rcub_cer_5827 .

TY  - CONF
AU  - Jović, Vesna
AU  - Lamovec, Jelena
AU  - Mladenović, Ivana
AU  - Popović, Mirjana
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5746
AB  - Izučavan je uticaj rastvorenog O2
 u BOE (puferovanim
rastvorima za nagrizanje SiO2
) sastava 7 vol.(40 tež. % NH4F) : 1
vol. (49 tež. % HF), koji se uobičajeno koristi za delineaciju SiO2 u
procesima mikrofabrikacije primenom fotolitografije. Monokristalni
Si se nagriza u ovom rastvoru samo ako on sadrži kiseonik.
Utvrñeno je da je brzina nagrizanja Si u navedenom rastvoru koji je
zasićen sa O2
, parcijalnog pritisaka u gasnoj fazi od 1 atm, 10.2
nm⋅min-1 na 23 oC i 18,6 nm⋅min-1 na 45 oC.
AB  - The influence of dissolved oxygen in BOE (buffered etchant for SiO2) solution with composition 7 vol. % (40 wt.% NH4F) : 1 vol % (49 wt. % HF) have been investigated. This is solution which usually have been used for delineation of SiO2 on monocrystalline Si in microfabrication. It is faund that the dissolved oxygen facilitates the etching of Si, but makes etching slower for SiO2. Etching rate of Si(100) for solution saturated with O2 bubbling at 1 atm pressure have been estimated as 10.2 nm⋅min-1 at 23 oC and 18,6 nm⋅min-1 at 45 oC.
PB  - Beograd : Društvo za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku
C3  - Zbornik - 56. konferencija za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku, ETRAN 2012, Zlatibor
T1  - Odredjivanje brzine nagrizanja monokristalnog si (100) orijentacije u puferovanom rastvoru fluorovodonične kiseline
T1  - Etch rate determination of (100) oriented monocrystalline si in buffered hydrofluoric acid solution
IS  - MO 3.2
SP  - 1
EP  - 5
UR  - https://hdl.handle.net/21.15107/rcub_cer_5746
ER  - 

@conference{
author = "Jović, Vesna and Lamovec, Jelena and Mladenović, Ivana and Popović, Mirjana",
year = "2012",
abstract = "Izučavan je uticaj rastvorenog O2
 u BOE (puferovanim
rastvorima za nagrizanje SiO2
) sastava 7 vol.(40 tež. % NH4F) : 1
vol. (49 tež. % HF), koji se uobičajeno koristi za delineaciju SiO2 u
procesima mikrofabrikacije primenom fotolitografije. Monokristalni
Si se nagriza u ovom rastvoru samo ako on sadrži kiseonik.
Utvrñeno je da je brzina nagrizanja Si u navedenom rastvoru koji je
zasićen sa O2
, parcijalnog pritisaka u gasnoj fazi od 1 atm, 10.2
nm⋅min-1 na 23 oC i 18,6 nm⋅min-1 na 45 oC., The influence of dissolved oxygen in BOE (buffered etchant for SiO2) solution with composition 7 vol. % (40 wt.% NH4F) : 1 vol % (49 wt. % HF) have been investigated. This is solution which usually have been used for delineation of SiO2 on monocrystalline Si in microfabrication. It is faund that the dissolved oxygen facilitates the etching of Si, but makes etching slower for SiO2. Etching rate of Si(100) for solution saturated with O2 bubbling at 1 atm pressure have been estimated as 10.2 nm⋅min-1 at 23 oC and 18,6 nm⋅min-1 at 45 oC.",
publisher = "Beograd : Društvo za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku",
journal = "Zbornik - 56. konferencija za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku, ETRAN 2012, Zlatibor",
title = "Odredjivanje brzine nagrizanja monokristalnog si (100) orijentacije u puferovanom rastvoru fluorovodonične kiseline, Etch rate determination of (100) oriented monocrystalline si in buffered hydrofluoric acid solution",
number = "MO 3.2",
pages = "1-5",
url = "https://hdl.handle.net/21.15107/rcub_cer_5746"
}

Jović, V., Lamovec, J., Mladenović, I.,& Popović, M.. (2012). Odredjivanje brzine nagrizanja monokristalnog si (100) orijentacije u puferovanom rastvoru fluorovodonične kiseline. in Zbornik - 56. konferencija za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku, ETRAN 2012, Zlatibor
Beograd : Društvo za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku.(MO 3.2), 1-5.
https://hdl.handle.net/21.15107/rcub_cer_5746

Jović V, Lamovec J, Mladenović I, Popović M. Odredjivanje brzine nagrizanja monokristalnog si (100) orijentacije u puferovanom rastvoru fluorovodonične kiseline. in Zbornik - 56. konferencija za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku, ETRAN 2012, Zlatibor. 2012;(MO 3.2):1-5.
https://hdl.handle.net/21.15107/rcub_cer_5746 .

Jović, Vesna, Lamovec, Jelena, Mladenović, Ivana, Popović, Mirjana, "Odredjivanje brzine nagrizanja monokristalnog si (100) orijentacije u puferovanom rastvoru fluorovodonične kiseline" in Zbornik - 56. konferencija za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku, ETRAN 2012, Zlatibor, no. MO 3.2 (2012):1-5,
https://hdl.handle.net/21.15107/rcub_cer_5746 .

TY  - CONF
AU  - Jović, Vesna
AU  - Lamovec, Jelena
AU  - Smiljanić, Milče
AU  - Popović, Mirjana
PY  - 2010
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/757
AB  - The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along  LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.
C3  - 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
T1  - Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon
SP  - 243
EP  - 246
DO  - 10.1109/MIEL.2010.5490489
ER  - 

@conference{
author = "Jović, Vesna and Lamovec, Jelena and Smiljanić, Milče and Popović, Mirjana",
year = "2010",
abstract = "The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along  LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.",
journal = "27th International Conference on Microelectronics, MIEL 2010 - Proceedings",
title = "Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon",
pages = "243-246",
doi = "10.1109/MIEL.2010.5490489"
}

Jović, V., Lamovec, J., Smiljanić, M.,& Popović, M.. (2010). Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon. in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 243-246.
https://doi.org/10.1109/MIEL.2010.5490489

Jović V, Lamovec J, Smiljanić M, Popović M. Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon. in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings. 2010;:243-246.
doi:10.1109/MIEL.2010.5490489 .

Jović, Vesna, Lamovec, Jelena, Smiljanić, Milče, Popović, Mirjana, "Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon" in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings (2010):243-246,
https://doi.org/10.1109/MIEL.2010.5490489 . .

TY  - JOUR
AU  - Randjelović, Danijela
AU  - Đurić, Zoran G.
AU  - Petropoulos, Anastasios
AU  - Kaltsas, Grigoris
AU  - Lazić, Žarko
AU  - Popović, Mirjana
PY  - 2009
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/536
AB  - A novel, simple approach for analytical modelling of thermal flow sensors has been implemented. It is based on unification of results obtained using the already developed two-zone analytical model and theory of laminar fluid flow over uniformly heated plate. This model can be used in order to extract the main parameters for various geometrical configurations of thermal flow sensors. Presented analytical model was further verified by experimental results. Flow tests were performed using multipurpose MEMS flow sensors consisting of two thermopiles, with 30 p(+)Si/Al thermocouples each, and a "U" shaped p(+)Si heater. Thermally isolating membrane was formed of sputtered SiO(2) and residual n-Si layer. Experimental evaluation was performed under various flow conditions and applied heating power values. The results showed excellent agreement with theoretical predictions.
PB  - Elsevier
T2  - Microelectronic Engineering
T1  - Analytical modelling of thermopile based flow sensor and verification with experimental results
VL  - 86
IS  - 4-6
SP  - 1293
EP  - 1296
DO  - 10.1016/j.mee.2008.12.004
ER  - 

@article{
author = "Randjelović, Danijela and Đurić, Zoran G. and Petropoulos, Anastasios and Kaltsas, Grigoris and Lazić, Žarko and Popović, Mirjana",
year = "2009",
abstract = "A novel, simple approach for analytical modelling of thermal flow sensors has been implemented. It is based on unification of results obtained using the already developed two-zone analytical model and theory of laminar fluid flow over uniformly heated plate. This model can be used in order to extract the main parameters for various geometrical configurations of thermal flow sensors. Presented analytical model was further verified by experimental results. Flow tests were performed using multipurpose MEMS flow sensors consisting of two thermopiles, with 30 p(+)Si/Al thermocouples each, and a "U" shaped p(+)Si heater. Thermally isolating membrane was formed of sputtered SiO(2) and residual n-Si layer. Experimental evaluation was performed under various flow conditions and applied heating power values. The results showed excellent agreement with theoretical predictions.",
publisher = "Elsevier",
journal = "Microelectronic Engineering",
title = "Analytical modelling of thermopile based flow sensor and verification with experimental results",
volume = "86",
number = "4-6",
pages = "1293-1296",
doi = "10.1016/j.mee.2008.12.004"
}

Randjelović, D., Đurić, Z. G., Petropoulos, A., Kaltsas, G., Lazić, Ž.,& Popović, M.. (2009). Analytical modelling of thermopile based flow sensor and verification with experimental results. in Microelectronic Engineering
Elsevier., 86(4-6), 1293-1296.
https://doi.org/10.1016/j.mee.2008.12.004

Randjelović D, Đurić ZG, Petropoulos A, Kaltsas G, Lazić Ž, Popović M. Analytical modelling of thermopile based flow sensor and verification with experimental results. in Microelectronic Engineering. 2009;86(4-6):1293-1296.
doi:10.1016/j.mee.2008.12.004 .

Randjelović, Danijela, Đurić, Zoran G., Petropoulos, Anastasios, Kaltsas, Grigoris, Lazić, Žarko, Popović, Mirjana, "Analytical modelling of thermopile based flow sensor and verification with experimental results" in Microelectronic Engineering, 86, no. 4-6 (2009):1293-1296,
https://doi.org/10.1016/j.mee.2008.12.004 . .

TY  - CONF
AU  - Jović, Vesna
AU  - Lamovec, Jelena
AU  - Popović, Mirjana
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/423
AB  - Different propanol isomers additives to 26 wt. % KOH water solution have been studied. It was stated that addition of both isomers result in changing etching anisotropy of (110) oriented corners on Si  LT  100 >. For the same etching depth, IPA addition causes higher corner undercutting than 1-propanol addition. Surface topography is better in IPA containing solutions.
PB  - Institute of Electrical and Electronics Engineers Inc.
C3  - 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
T1  - Investigation of silicon anisotropic etching in alkaline solutions with propanol addition
SP  - 355
EP  - 358
DO  - 10.1109/ICMEL.2008.4559295
ER  - 

@conference{
author = "Jović, Vesna and Lamovec, Jelena and Popović, Mirjana",
year = "2008",
abstract = "Different propanol isomers additives to 26 wt. % KOH water solution have been studied. It was stated that addition of both isomers result in changing etching anisotropy of (110) oriented corners on Si  LT  100 >. For the same etching depth, IPA addition causes higher corner undercutting than 1-propanol addition. Surface topography is better in IPA containing solutions.",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
journal = "26th International Conference on Microelectronics, Vols 1 and 2, Proceedings",
title = "Investigation of silicon anisotropic etching in alkaline solutions with propanol addition",
pages = "355-358",
doi = "10.1109/ICMEL.2008.4559295"
}

Jović, V., Lamovec, J.,& Popović, M.. (2008). Investigation of silicon anisotropic etching in alkaline solutions with propanol addition. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
Institute of Electrical and Electronics Engineers Inc.., 355-358.
https://doi.org/10.1109/ICMEL.2008.4559295

Jović V, Lamovec J, Popović M. Investigation of silicon anisotropic etching in alkaline solutions with propanol addition. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:355-358.
doi:10.1109/ICMEL.2008.4559295 .

Jović, Vesna, Lamovec, Jelena, Popović, Mirjana, "Investigation of silicon anisotropic etching in alkaline solutions with propanol addition" in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):355-358,
https://doi.org/10.1109/ICMEL.2008.4559295 . .

TY  - JOUR
AU  - Jović, Vesna
AU  - Lamovec, Jelena
AU  - Popović, Mirjana
AU  - Lazić, Žarko
PY  - 2007
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/308
AB  - The undercutting process of thermal SiO2 microcantilevers with different orientations on (100) Si wafer was studied. The silicon substrate was removed by anisotropic chemical etching with a 25 wt. % aqueous solution of TMAH or a 30 wt. % aqueous KOH solution at 80 °C. It was found that [110] oriented cantilevers were undercutting frontally along the length and [100] oriented cantilevers experience undercutting along the width of the cantilever, which is a less time consuming process. The studies showed that the [100] orientation of SiO2 microbridges enables theirs fabrication on a (100) oriented Si substrate.
AB  - Izučavana je realizacija mikrogredica od termički deponovanog SiO2 na monokristalnim podlogama Si (100) orijentacije. Gredice su realizovane anizotropnim hemijskim nagrizanjem u sledećim vodenim rastvorima: 25 tež. % TMAH (tetrametilamonijum hidroksid) i 30 tež. % KOH. Temperatura nagrizanja je bila 80 °C. SiO2 mikrogredice orijentisane u [110] pravcu na Si (100) podlozi se oslobađaju čeonim podgrizanjem Si podloge i brzina realizacije gredice zavisi i od njene širine i od njene dužine. Utvrđene su i brzine nagrizanja SiO2 u ovim rastvorima i pokazalo se da promena debljine gredice, koja za ovako orijentisane gredice postoji po dužini, biva izraženija u rastvorima KOH. Na SiO2 mikrogredicama ove orijentacije je opažena pojava mikroprskotina koje su objašnjene samim mehanizmom podgrizanja Si u cilju "oslobađanja" mikrogredica ove orijentacije. SiO2 mikrogredice orijentisane u [110] pravcu na (100) Si podlozi se "oslobađaju" bočnim podgrizanjem Si podloge i brzina njihove realizacije ne zavisi od dužine mikrogredice već samo od njene širine. Mikromostiće od termički deponovanog SiO2 je moguće realizovati anizotropnim hemijskim nagrizanjem u razmatranim rastvorima samo kada su orijentisani u [100] pravcu na (100) Si podlozi. .
PB  - Serbian Chemical Society
T2  - Journal of the Serbian Chemical Society
T1  - Fabrication of Sio2-based microcantilevers by anisotropic chemical etching of (100) single crystal Si
T1  - Izrada mikrogredica od SiO2 anizotropnim hemijskim nagrizanjem na monokristalnom silicijumu (100) orijentacije
VL  - 72
IS  - 11
SP  - 1127
EP  - 1138
DO  - 10.2298/JSC0711127J
ER  - 

@article{
author = "Jović, Vesna and Lamovec, Jelena and Popović, Mirjana and Lazić, Žarko",
year = "2007",
abstract = "The undercutting process of thermal SiO2 microcantilevers with different orientations on (100) Si wafer was studied. The silicon substrate was removed by anisotropic chemical etching with a 25 wt. % aqueous solution of TMAH or a 30 wt. % aqueous KOH solution at 80 °C. It was found that [110] oriented cantilevers were undercutting frontally along the length and [100] oriented cantilevers experience undercutting along the width of the cantilever, which is a less time consuming process. The studies showed that the [100] orientation of SiO2 microbridges enables theirs fabrication on a (100) oriented Si substrate., Izučavana je realizacija mikrogredica od termički deponovanog SiO2 na monokristalnim podlogama Si (100) orijentacije. Gredice su realizovane anizotropnim hemijskim nagrizanjem u sledećim vodenim rastvorima: 25 tež. % TMAH (tetrametilamonijum hidroksid) i 30 tež. % KOH. Temperatura nagrizanja je bila 80 °C. SiO2 mikrogredice orijentisane u [110] pravcu na Si (100) podlozi se oslobađaju čeonim podgrizanjem Si podloge i brzina realizacije gredice zavisi i od njene širine i od njene dužine. Utvrđene su i brzine nagrizanja SiO2 u ovim rastvorima i pokazalo se da promena debljine gredice, koja za ovako orijentisane gredice postoji po dužini, biva izraženija u rastvorima KOH. Na SiO2 mikrogredicama ove orijentacije je opažena pojava mikroprskotina koje su objašnjene samim mehanizmom podgrizanja Si u cilju "oslobađanja" mikrogredica ove orijentacije. SiO2 mikrogredice orijentisane u [110] pravcu na (100) Si podlozi se "oslobađaju" bočnim podgrizanjem Si podloge i brzina njihove realizacije ne zavisi od dužine mikrogredice već samo od njene širine. Mikromostiće od termički deponovanog SiO2 je moguće realizovati anizotropnim hemijskim nagrizanjem u razmatranim rastvorima samo kada su orijentisani u [100] pravcu na (100) Si podlozi. .",
publisher = "Serbian Chemical Society",
journal = "Journal of the Serbian Chemical Society",
title = "Fabrication of Sio2-based microcantilevers by anisotropic chemical etching of (100) single crystal Si, Izrada mikrogredica od SiO2 anizotropnim hemijskim nagrizanjem na monokristalnom silicijumu (100) orijentacije",
volume = "72",
number = "11",
pages = "1127-1138",
doi = "10.2298/JSC0711127J"
}

Jović, V., Lamovec, J., Popović, M.,& Lazić, Ž.. (2007). Fabrication of Sio2-based microcantilevers by anisotropic chemical etching of (100) single crystal Si. in Journal of the Serbian Chemical Society
Serbian Chemical Society., 72(11), 1127-1138.
https://doi.org/10.2298/JSC0711127J

Jović V, Lamovec J, Popović M, Lazić Ž. Fabrication of Sio2-based microcantilevers by anisotropic chemical etching of (100) single crystal Si. in Journal of the Serbian Chemical Society. 2007;72(11):1127-1138.
doi:10.2298/JSC0711127J .

Jović, Vesna, Lamovec, Jelena, Popović, Mirjana, Lazić, Žarko, "Fabrication of Sio2-based microcantilevers by anisotropic chemical etching of (100) single crystal Si" in Journal of the Serbian Chemical Society, 72, no. 11 (2007):1127-1138,
https://doi.org/10.2298/JSC0711127J . .

TY  - CONF
AU  - Randjelović, Danijela
AU  - Kaltsas, Grigoris
AU  - Lazić, Žarko
AU  - Popović, Mirjana
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/7059
AB  - This paper reports a multipurpose thermal sensor based on the Seebeck effect. The sensor has thermocouples with a multilayer structure consisting of one thermocouple strip laying on the insulating membrane and the other one under the first thermoelement and the membrane. The vertical arrangement allows a greater number of thermocouples to be placed on a given chip area. Central and lateral thermistors are placed near hot and cold thermocouple junctions, respectively, and serve for determination of the temperature difference established on the chip. Experimental results confirm that the same structure could be used as a thermal converter and a gas flow meter.
PB  - Institute of Electrical and Electronics Engineers Inc (IEEE)
C3  - Proceedings - 23rd International Conference on Microelectronics, MIEL 2002
T1  - Multipurpose thermal sensor based on Seebeck effect
VL  - 1
SP  - 261
EP  - 264
DO  - 10.1109/MIEL.2002.1003189
ER  - 

@conference{
author = "Randjelović, Danijela and Kaltsas, Grigoris and Lazić, Žarko and Popović, Mirjana",
year = "2002",
abstract = "This paper reports a multipurpose thermal sensor based on the Seebeck effect. The sensor has thermocouples with a multilayer structure consisting of one thermocouple strip laying on the insulating membrane and the other one under the first thermoelement and the membrane. The vertical arrangement allows a greater number of thermocouples to be placed on a given chip area. Central and lateral thermistors are placed near hot and cold thermocouple junctions, respectively, and serve for determination of the temperature difference established on the chip. Experimental results confirm that the same structure could be used as a thermal converter and a gas flow meter.",
publisher = "Institute of Electrical and Electronics Engineers Inc (IEEE)",
journal = "Proceedings - 23rd International Conference on Microelectronics, MIEL 2002",
title = "Multipurpose thermal sensor based on Seebeck effect",
volume = "1",
pages = "261-264",
doi = "10.1109/MIEL.2002.1003189"
}

Randjelović, D., Kaltsas, G., Lazić, Ž.,& Popović, M.. (2002). Multipurpose thermal sensor based on Seebeck effect. in Proceedings - 23rd International Conference on Microelectronics, MIEL 2002
Institute of Electrical and Electronics Engineers Inc (IEEE)., 1, 261-264.
https://doi.org/10.1109/MIEL.2002.1003189

Randjelović D, Kaltsas G, Lazić Ž, Popović M. Multipurpose thermal sensor based on Seebeck effect. in Proceedings - 23rd International Conference on Microelectronics, MIEL 2002. 2002;1:261-264.
doi:10.1109/MIEL.2002.1003189 .

Randjelović, Danijela, Kaltsas, Grigoris, Lazić, Žarko, Popović, Mirjana, "Multipurpose thermal sensor based on Seebeck effect" in Proceedings - 23rd International Conference on Microelectronics, MIEL 2002, 1 (2002):261-264,
https://doi.org/10.1109/MIEL.2002.1003189 . .