TY  - JOUR
AU  - Smiljanić, Milče M.
AU  - Radjenović, Branislav
AU  - Lazić, Žarko
AU  - Radmilović Radjenović, Marija
AU  - Rašljić Rafajilović, Milena
AU  - Cvetanović Zobenica, Katarina
AU  - Milinković, Evgenija
AU  - Filipović, Ana
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4453
AB  - In  this  paper,  fabrication  of  silicon  microchannels  with  integrated  obstacles  by  using  25 wt.% tetramethylammonium  hydroxide  (TMAH)  aqueous  solution  at  the  temperature  of  80 C  is presented  and  analysed.  We  studied  basic  island  patterns,  which present  union  of  two symmetrical parallelograms with the sides along predetermined crystallographic directions <n10> (2<n<8) and <100>. Acute angles of the parallelograms were smaller than 45o. We have derived analytical  relations  for  determining  dimensions  of  the  integrated  obstacles.  The  developed etching  technique  provides  reduction  of  the  distance  between  the  obstacles.  Before  the experiments, we performed simulations of pattern etching based on the level set method and presented  evolution  of  the  etched basic  patterns  for  the  predetermined  crystallographic directions  <n10>.  Combination  of  basic  patterns  with  sides  along  the  <610>  and  <100> crystallographic  directions  is  used  to  fabricate  a  matrix  of  two  row  of  silicon  obstacles  in  a microchannel.   We   obtained   a   good   agreement   between   the   experimental   results   and simulations.   Our   results   enable   simple  and   cost-effective  fabrication   of  various   complex microfluidic silicon platforms with integrated obstacles.
AB  - U ovom radu je prezentovana i analizirana izrada silicijumskih mikrokanala sa integrisanim preprekama u vodenom rastvoru 25 mas.% tetrametilamonijum hidroksida (TMAH) na temperaturi od 80 oC. Proučavani su osnovni oblici maski koji predstavljaju uniju dva simetrična ostrva u obliku paralelograma čije su stranice duž unapred određenih kristalografskih pravaca (2<n<8) i <100>. Oštri uglovi paralelograma su manji od 45˚. Izvedene su formule za izračunavanje dimenzija integrisanih prepreka. Razvijena je tehnika nagrizanja koja smanjuje rastojanje između prepreka. Pre eksperimenata izvršene su simulacije osnovnih oblika koje se baziraju na metodi implicitno definisanih nivoa (engl. level set method). Prezentovan je razvoj nagrizanih osnovnih oblika maski za unapred određene kristalografske pravce <n10>. Kombinacija osnovnih oblika maski čije su stranice duž kristalografskih pravaca <610> i <100> je iskorišćena za izradu dva reda matrice silicijumskih prepreka u mikrokanalu. Dobijeno je dobro slaganje između eksperimenata i simulacija. Dobijeni rezultati omogućavaju jednostavnu i jeftinu izradu različitih kompleksnih mikrofluidnih silicijumskih platformi sa integrisanim preprekama.
PB  - Association of Chemical Engeneers of Serbia
T2  - Hemijska industrija
T1  - Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH
T1  - Kontrolisan raspored integrisanih prepreka u silicijumskim mikrokanalima nagrizanim u 25 mas.% rastvoru tetrametilamonijum hidroksida
VL  - 75
IS  - 1
SP  - 15
EP  - 24
DO  - 10.2298/HEMIND200807005S
ER  - 

@article{
author = "Smiljanić, Milče M. and Radjenović, Branislav and Lazić, Žarko and Radmilović Radjenović, Marija and Rašljić Rafajilović, Milena and Cvetanović Zobenica, Katarina and Milinković, Evgenija and Filipović, Ana",
year = "2021",
abstract = "In  this  paper,  fabrication  of  silicon  microchannels  with  integrated  obstacles  by  using  25 wt.% tetramethylammonium  hydroxide  (TMAH)  aqueous  solution  at  the  temperature  of  80 C  is presented  and  analysed.  We  studied  basic  island  patterns,  which present  union  of  two symmetrical parallelograms with the sides along predetermined crystallographic directions <n10> (2<n<8) and <100>. Acute angles of the parallelograms were smaller than 45o. We have derived analytical  relations  for  determining  dimensions  of  the  integrated  obstacles.  The  developed etching  technique  provides  reduction  of  the  distance  between  the  obstacles.  Before  the experiments, we performed simulations of pattern etching based on the level set method and presented  evolution  of  the  etched basic  patterns  for  the  predetermined  crystallographic directions  <n10>.  Combination  of  basic  patterns  with  sides  along  the  <610>  and  <100> crystallographic  directions  is  used  to  fabricate  a  matrix  of  two  row  of  silicon  obstacles  in  a microchannel.   We   obtained   a   good   agreement   between   the   experimental   results   and simulations.   Our   results   enable   simple  and   cost-effective  fabrication   of  various   complex microfluidic silicon platforms with integrated obstacles., U ovom radu je prezentovana i analizirana izrada silicijumskih mikrokanala sa integrisanim preprekama u vodenom rastvoru 25 mas.% tetrametilamonijum hidroksida (TMAH) na temperaturi od 80 oC. Proučavani su osnovni oblici maski koji predstavljaju uniju dva simetrična ostrva u obliku paralelograma čije su stranice duž unapred određenih kristalografskih pravaca (2<n<8) i <100>. Oštri uglovi paralelograma su manji od 45˚. Izvedene su formule za izračunavanje dimenzija integrisanih prepreka. Razvijena je tehnika nagrizanja koja smanjuje rastojanje između prepreka. Pre eksperimenata izvršene su simulacije osnovnih oblika koje se baziraju na metodi implicitno definisanih nivoa (engl. level set method). Prezentovan je razvoj nagrizanih osnovnih oblika maski za unapred određene kristalografske pravce <n10>. Kombinacija osnovnih oblika maski čije su stranice duž kristalografskih pravaca <610> i <100> je iskorišćena za izradu dva reda matrice silicijumskih prepreka u mikrokanalu. Dobijeno je dobro slaganje između eksperimenata i simulacija. Dobijeni rezultati omogućavaju jednostavnu i jeftinu izradu različitih kompleksnih mikrofluidnih silicijumskih platformi sa integrisanim preprekama.",
publisher = "Association of Chemical Engeneers of Serbia",
journal = "Hemijska industrija",
title = "Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH, Kontrolisan raspored integrisanih prepreka u silicijumskim mikrokanalima nagrizanim u 25 mas.% rastvoru tetrametilamonijum hidroksida",
volume = "75",
number = "1",
pages = "15-24",
doi = "10.2298/HEMIND200807005S"
}

Smiljanić, M. M., Radjenović, B., Lazić, Ž., Radmilović Radjenović, M., Rašljić Rafajilović, M., Cvetanović Zobenica, K., Milinković, E.,& Filipović, A.. (2021). Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH. in Hemijska industrija
Association of Chemical Engeneers of Serbia., 75(1), 15-24.
https://doi.org/10.2298/HEMIND200807005S

Smiljanić MM, Radjenović B, Lazić Ž, Radmilović Radjenović M, Rašljić Rafajilović M, Cvetanović Zobenica K, Milinković E, Filipović A. Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH. in Hemijska industrija. 2021;75(1):15-24.
doi:10.2298/HEMIND200807005S .

Smiljanić, Milče M., Radjenović, Branislav, Lazić, Žarko, Radmilović Radjenović, Marija, Rašljić Rafajilović, Milena, Cvetanović Zobenica, Katarina, Milinković, Evgenija, Filipović, Ana, "Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH" in Hemijska industrija, 75, no. 1 (2021):15-24,
https://doi.org/10.2298/HEMIND200807005S . .

TY  - JOUR
AU  - Smiljanić, Milče M.
AU  - Lazić, Žarko
AU  - Jović, Vesna
AU  - Radjenović, Branislav
AU  - Radmilović-Radjenović, Marija
PY  - 2020
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3490
AB  - This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.
PB  - MDPI
T2  - Micromachines
T1  - Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
VL  - 11
IS  - 3
SP  - 253
DO  - 10.3390/mi11030253
ER  - 

@article{
author = "Smiljanić, Milče M. and Lazić, Žarko and Jović, Vesna and Radjenović, Branislav and Radmilović-Radjenović, Marija",
year = "2020",
abstract = "This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.",
publisher = "MDPI",
journal = "Micromachines",
title = "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C",
volume = "11",
number = "3",
pages = "253",
doi = "10.3390/mi11030253"
}

Smiljanić, M. M., Lazić, Ž., Jović, V., Radjenović, B.,& Radmilović-Radjenović, M.. (2020). Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines
MDPI., 11(3), 253.
https://doi.org/10.3390/mi11030253

Smiljanić MM, Lazić Ž, Jović V, Radjenović B, Radmilović-Radjenović M. Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines. 2020;11(3):253.
doi:10.3390/mi11030253 .

Smiljanić, Milče M., Lazić, Žarko, Jović, Vesna, Radjenović, Branislav, Radmilović-Radjenović, Marija, "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C" in Micromachines, 11, no. 3 (2020):253,
https://doi.org/10.3390/mi11030253 . .

TY  - JOUR
AU  - Smiljanić, Milče
AU  - Lazić, Žarko
AU  - Rađenović, Branislav
AU  - Radmilović-Radjenović, Marija
AU  - Jović, Vesna
PY  - 2019
UR  - http://www.mdpi.com/2072-666X/10/2/102
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/2640
AB  - Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.
PB  - MDPI
T2  - Micromachines
T2  - Micromachines
T1  - Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH
VL  - 10
IS  - 2
SP  - 102
DO  - 10.3390/mi10020102
ER  - 

@article{
author = "Smiljanić, Milče and Lazić, Žarko and Rađenović, Branislav and Radmilović-Radjenović, Marija and Jović, Vesna",
year = "2019",
abstract = "Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.",
publisher = "MDPI",
journal = "Micromachines, Micromachines",
title = "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH",
volume = "10",
number = "2",
pages = "102",
doi = "10.3390/mi10020102"
}

Smiljanić, M., Lazić, Ž., Rađenović, B., Radmilović-Radjenović, M.,& Jović, V.. (2019). Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines
MDPI., 10(2), 102.
https://doi.org/10.3390/mi10020102

Smiljanić M, Lazić Ž, Rađenović B, Radmilović-Radjenović M, Jović V. Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines. 2019;10(2):102.
doi:10.3390/mi10020102 .

Smiljanić, Milče, Lazić, Žarko, Rađenović, Branislav, Radmilović-Radjenović, Marija, Jović, Vesna, "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH" in Micromachines, 10, no. 2 (2019):102,
https://doi.org/10.3390/mi10020102 . .

TY  - JOUR
AU  - Smiljanić, Milče
AU  - Radjenovic, Branislav
AU  - Radmilović-Radjenović, Marija
AU  - Lazić, Žarko
AU  - Jović, Vesna
PY  - 2014
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1426
AB  - Maskless etching with convex corner compensation in the form of a  LT  100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.
PB  - Iop Publishing Ltd, Bristol
T2  - Journal of Micromechanics and Microengineering
T1  - Simulation and experimental study of maskless convex corner compensation in TMAH water solution
VL  - 24
IS  - 11
DO  - 10.1088/0960-1317/24/11/115003
ER  - 

@article{
author = "Smiljanić, Milče and Radjenovic, Branislav and Radmilović-Radjenović, Marija and Lazić, Žarko and Jović, Vesna",
year = "2014",
abstract = "Maskless etching with convex corner compensation in the form of a  LT  100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.",
publisher = "Iop Publishing Ltd, Bristol",
journal = "Journal of Micromechanics and Microengineering",
title = "Simulation and experimental study of maskless convex corner compensation in TMAH water solution",
volume = "24",
number = "11",
doi = "10.1088/0960-1317/24/11/115003"
}

Smiljanić, M., Radjenovic, B., Radmilović-Radjenović, M., Lazić, Ž.,& Jović, V.. (2014). Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering
Iop Publishing Ltd, Bristol., 24(11).
https://doi.org/10.1088/0960-1317/24/11/115003

Smiljanić M, Radjenovic B, Radmilović-Radjenović M, Lazić Ž, Jović V. Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering. 2014;24(11).
doi:10.1088/0960-1317/24/11/115003 .

Smiljanić, Milče, Radjenovic, Branislav, Radmilović-Radjenović, Marija, Lazić, Žarko, Jović, Vesna, "Simulation and experimental study of maskless convex corner compensation in TMAH water solution" in Journal of Micromechanics and Microengineering, 24, no. 11 (2014),
https://doi.org/10.1088/0960-1317/24/11/115003 . .