Đinović, Zoran

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Authority KeyName Variants
721cd0ae-d054-434f-b145-83fbc4de0689
  • Đinović, Zoran (8)
  • Đinović, Zoran V. (1)

Author's Bibliography

Opto-fluidna platforma za praćenje ćelija raka

Lazić, Žarko; Smiljanić, Milče; Đinović, Zoran; Rašljić, Milena; Cvetanović-Zobenica, Katarina; Vasiljević-Radović, Dana

(University of Belgrade - Institute of Chemistry, Technology and Metallurgy, 2019)


                                            

                                            
Lazić, Ž., Smiljanić, M., Đinović, Z., Rašljić, M., Cvetanović-Zobenica, K.,& Vasiljević-Radović, D.. (2019). Opto-fluidna platforma za praćenje ćelija raka. 
University of Belgrade - Institute of Chemistry, Technology and Metallurgy..
https://hdl.handle.net/21.15107/rcub_cer_7418
Lazić Ž, Smiljanić M, Đinović Z, Rašljić M, Cvetanović-Zobenica K, Vasiljević-Radović D. Opto-fluidna platforma za praćenje ćelija raka. 2019;.
https://hdl.handle.net/21.15107/rcub_cer_7418 .
Lazić, Žarko, Smiljanić, Milče, Đinović, Zoran, Rašljić, Milena, Cvetanović-Zobenica, Katarina, Vasiljević-Radović, Dana, "Opto-fluidna platforma za praćenje ćelija raka" (2019),
https://hdl.handle.net/21.15107/rcub_cer_7418 .

Experimental study of PDMS membranes fabricated either by spin coating or transfer bonding to a silicon chip with etched cavity

Jović, Vesna; Lamovec, Jelena; Starčević, Marko; Đinović, Zoran; Smiljanić, Milče M.; Lazić, Žarko

(Belgrade : The Military Technical Institute, 2018)

TY  - CONF
AU  - Jović, Vesna
AU  - Lamovec, Jelena
AU  - Starčević, Marko
AU  - Đinović, Zoran
AU  - Smiljanić, Milče M.
AU  - Lazić, Žarko
PY  - 2018
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5795
AB  - Nowadays, with no doubt, PDMS, poly(dimethylsiloxane) elastomer is material of choice for microfluidic 
fabrication because of its unique chemical, optical and mechanical properties. Unfortunately, it is not photo-definable (i.e. 
not a photoresist) and fabrication of PDMS MEM (micro-electro-mechanical) devices is typically done using soft 
lithography. Some steps of the process are difficult to perform without manually handling PDMS layers. Next problem to be 
considered in patterning PDMS membranes is bond strength between membrane and silicon substrate. To investigate this, 
we fabricated PDMS membranes on silicon either by spin coating Si wafer or transferring previously fabricated PDMS 
membrane to Si chip with bonding layer on it. PDMS network samples for this research were synthesized with the same 
composition, which are Sylgard 184 (Dow Corning, USA) silicone elastomer base and silicone elastomer curing agent, 
volume ratio 10:1. Fabrication of test structures is based on bulk micromachining on ⟨100⟩ oriented Si wafers to fabricate 
square cavities on which PDMS membranes were realized by one of mentioned procedures. Mechanical testing of PDMS 
membranes, elastic properties and adhesion strength of membranes with different thicknesses were investigated applying 
pressurized bulge testing. Pressure was applied to the PDMS membrane via nitrogen gas and the resulting load-deflection 
curves were monitoring.
PB  - Belgrade : The Military Technical Institute
C3  - Proceedings - 8th International Scientific Conference of Defensive Technologies, OTEH 2018, 11-12.10.2018, Belgrade
T1  - Experimental study of PDMS membranes fabricated either by spin coating or transfer bonding to a silicon chip with etched cavity
SP  - 462
EP  - 467
UR  - https://hdl.handle.net/21.15107/rcub_cer_5795
ER  - 
@conference{
author = "Jović, Vesna and Lamovec, Jelena and Starčević, Marko and Đinović, Zoran and Smiljanić, Milče M. and Lazić, Žarko",
year = "2018",
abstract = "Nowadays, with no doubt, PDMS, poly(dimethylsiloxane) elastomer is material of choice for microfluidic 
fabrication because of its unique chemical, optical and mechanical properties. Unfortunately, it is not photo-definable (i.e. 
not a photoresist) and fabrication of PDMS MEM (micro-electro-mechanical) devices is typically done using soft 
lithography. Some steps of the process are difficult to perform without manually handling PDMS layers. Next problem to be 
considered in patterning PDMS membranes is bond strength between membrane and silicon substrate. To investigate this, 
we fabricated PDMS membranes on silicon either by spin coating Si wafer or transferring previously fabricated PDMS 
membrane to Si chip with bonding layer on it. PDMS network samples for this research were synthesized with the same 
composition, which are Sylgard 184 (Dow Corning, USA) silicone elastomer base and silicone elastomer curing agent, 
volume ratio 10:1. Fabrication of test structures is based on bulk micromachining on ⟨100⟩ oriented Si wafers to fabricate 
square cavities on which PDMS membranes were realized by one of mentioned procedures. Mechanical testing of PDMS 
membranes, elastic properties and adhesion strength of membranes with different thicknesses were investigated applying 
pressurized bulge testing. Pressure was applied to the PDMS membrane via nitrogen gas and the resulting load-deflection 
curves were monitoring.",
publisher = "Belgrade : The Military Technical Institute",
journal = "Proceedings - 8th International Scientific Conference of Defensive Technologies, OTEH 2018, 11-12.10.2018, Belgrade",
title = "Experimental study of PDMS membranes fabricated either by spin coating or transfer bonding to a silicon chip with etched cavity",
pages = "462-467",
url = "https://hdl.handle.net/21.15107/rcub_cer_5795"
}
Jović, V., Lamovec, J., Starčević, M., Đinović, Z., Smiljanić, M. M.,& Lazić, Ž.. (2018). Experimental study of PDMS membranes fabricated either by spin coating or transfer bonding to a silicon chip with etched cavity. in Proceedings - 8th International Scientific Conference of Defensive Technologies, OTEH 2018, 11-12.10.2018, Belgrade
Belgrade : The Military Technical Institute., 462-467.
https://hdl.handle.net/21.15107/rcub_cer_5795
Jović V, Lamovec J, Starčević M, Đinović Z, Smiljanić MM, Lazić Ž. Experimental study of PDMS membranes fabricated either by spin coating or transfer bonding to a silicon chip with etched cavity. in Proceedings - 8th International Scientific Conference of Defensive Technologies, OTEH 2018, 11-12.10.2018, Belgrade. 2018;:462-467.
https://hdl.handle.net/21.15107/rcub_cer_5795 .
Jović, Vesna, Lamovec, Jelena, Starčević, Marko, Đinović, Zoran, Smiljanić, Milče M., Lazić, Žarko, "Experimental study of PDMS membranes fabricated either by spin coating or transfer bonding to a silicon chip with etched cavity" in Proceedings - 8th International Scientific Conference of Defensive Technologies, OTEH 2018, 11-12.10.2018, Belgrade (2018):462-467,
https://hdl.handle.net/21.15107/rcub_cer_5795 .

Design and Fabrication of the Silicon Moving Plate with Cantilever Beams for Paraffin Based Actuator

Lazić, Žarko; Smiljanić, Milče M.; Radulović, Katarina; Rašljić, Milena; Cvetanović, Katarina; Vasiljević-Radović, Dana; Đinović, Zoran; Kment, Christoph

(Beograd : Društvo za ETRAN / Belgrade : ETRAN Society, 2015)

TY  - CONF
AU  - Lazić, Žarko
AU  - Smiljanić, Milče M.
AU  - Radulović, Katarina
AU  - Rašljić, Milena
AU  - Cvetanović, Katarina
AU  - Vasiljević-Radović, Dana
AU  - Đinović, Zoran
AU  - Kment, Christoph
PY  - 2015
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5733
AB  - In this work we present the design and manufacturing of the silicon moving plate with cantilever beams. The structure is of a monolithic type which comprises the anchor part, the two cantilever beams and the moving plate. The whole structure was manufactured by using sophisticated
compensation masks to prevent silicon underetching and by using double side photolithography. The set of the three photolithographic masks were used and the etching was performed on both sides of the silicon wafer simultaneously in 25 wt% TMAH water solution. This structure was originally developed for the paraffin based actuator, but it could be used on various platforms including the switching or moving mirror applications, for the steering purposes etc.
PB  - Beograd : Društvo za ETRAN / Belgrade : ETRAN Society
C3  - Proceedings 2n- d International Conference on Electrical, Electronic and Computing Engineering IcETRAN 2015
T1  - Design and Fabrication of the Silicon Moving Plate with Cantilever Beams for Paraffin Based Actuator
SP  - MOI2.1.1
EP  - MOI2.1.6
UR  - https://hdl.handle.net/21.15107/rcub_cer_5733
ER  - 
@conference{
author = "Lazić, Žarko and Smiljanić, Milče M. and Radulović, Katarina and Rašljić, Milena and Cvetanović, Katarina and Vasiljević-Radović, Dana and Đinović, Zoran and Kment, Christoph",
year = "2015",
abstract = "In this work we present the design and manufacturing of the silicon moving plate with cantilever beams. The structure is of a monolithic type which comprises the anchor part, the two cantilever beams and the moving plate. The whole structure was manufactured by using sophisticated
compensation masks to prevent silicon underetching and by using double side photolithography. The set of the three photolithographic masks were used and the etching was performed on both sides of the silicon wafer simultaneously in 25 wt% TMAH water solution. This structure was originally developed for the paraffin based actuator, but it could be used on various platforms including the switching or moving mirror applications, for the steering purposes etc.",
publisher = "Beograd : Društvo za ETRAN / Belgrade : ETRAN Society",
journal = "Proceedings 2n- d International Conference on Electrical, Electronic and Computing Engineering IcETRAN 2015",
title = "Design and Fabrication of the Silicon Moving Plate with Cantilever Beams for Paraffin Based Actuator",
pages = "MOI2.1.1-MOI2.1.6",
url = "https://hdl.handle.net/21.15107/rcub_cer_5733"
}
Lazić, Ž., Smiljanić, M. M., Radulović, K., Rašljić, M., Cvetanović, K., Vasiljević-Radović, D., Đinović, Z.,& Kment, C.. (2015). Design and Fabrication of the Silicon Moving Plate with Cantilever Beams for Paraffin Based Actuator. in Proceedings 2n- d International Conference on Electrical, Electronic and Computing Engineering IcETRAN 2015
Beograd : Društvo za ETRAN / Belgrade : ETRAN Society., MOI2.1.1-MOI2.1.6.
https://hdl.handle.net/21.15107/rcub_cer_5733
Lazić Ž, Smiljanić MM, Radulović K, Rašljić M, Cvetanović K, Vasiljević-Radović D, Đinović Z, Kment C. Design and Fabrication of the Silicon Moving Plate with Cantilever Beams for Paraffin Based Actuator. in Proceedings 2n- d International Conference on Electrical, Electronic and Computing Engineering IcETRAN 2015. 2015;:MOI2.1.1-MOI2.1.6.
https://hdl.handle.net/21.15107/rcub_cer_5733 .
Lazić, Žarko, Smiljanić, Milče M., Radulović, Katarina, Rašljić, Milena, Cvetanović, Katarina, Vasiljević-Radović, Dana, Đinović, Zoran, Kment, Christoph, "Design and Fabrication of the Silicon Moving Plate with Cantilever Beams for Paraffin Based Actuator" in Proceedings 2n- d International Conference on Electrical, Electronic and Computing Engineering IcETRAN 2015 (2015):MOI2.1.1-MOI2.1.6,
https://hdl.handle.net/21.15107/rcub_cer_5733 .

Реализација ПДМС (ПолиДиМетилСилоксанских) мембрана над дефинисаним отворима у Si {100} оријентације поступцима запреминског микромашинства

Jović, Vesna; Đinović, Zoran; Radovanović, Filip; Starčević, Marko; Lamovec, Jelena; Smiljanić, Milče M.; Lazić, Žarko; Popović, Bogdan; Vorkapić, Miloš

(Ministarstvo za prosvetu, nauku i tehnološki razvoj - Projekat TR32008, 2015)

TY  - GEN
AU  - Jović, Vesna
AU  - Đinović, Zoran
AU  - Radovanović, Filip
AU  - Starčević, Marko
AU  - Lamovec, Jelena
AU  - Smiljanić, Milče M.
AU  - Lazić, Žarko
AU  - Popović, Bogdan
AU  - Vorkapić, Miloš
PY  - 2015
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3981
AB  - Поступцима запреминског микромашинства су реализовани квадратни отвори у Si супстратима {100} оријентације и над њима мембране ПДМС-а различите дебљине. С обзиром, да се филмови ПДМС-а не могу обрађивати и структуирати класичним фотолитографским поступцима, овај технолошки поступак омогућава реализацију дефинисаних мембрана овог материјала на супстратима Si који се у потпуности могу структуирати поступцима класичне фотолитографије. Ово отвара могућност за
реализацијом читавог низа сензора и актуатора који у свом раду могу да користе хипереластичне мембране ПДМС-а.
PB  - Ministarstvo za prosvetu, nauku i tehnološki razvoj - Projekat TR32008
T1  - Реализација ПДМС (ПолиДиМетилСилоксанских) мембрана над дефинисаним отворима у Si {100} оријентације поступцима запреминског микромашинства
UR  - https://hdl.handle.net/21.15107/rcub_cer_3981
ER  - 
@misc{
author = "Jović, Vesna and Đinović, Zoran and Radovanović, Filip and Starčević, Marko and Lamovec, Jelena and Smiljanić, Milče M. and Lazić, Žarko and Popović, Bogdan and Vorkapić, Miloš",
year = "2015",
abstract = "Поступцима запреминског микромашинства су реализовани квадратни отвори у Si супстратима {100} оријентације и над њима мембране ПДМС-а различите дебљине. С обзиром, да се филмови ПДМС-а не могу обрађивати и структуирати класичним фотолитографским поступцима, овај технолошки поступак омогућава реализацију дефинисаних мембрана овог материјала на супстратима Si који се у потпуности могу структуирати поступцима класичне фотолитографије. Ово отвара могућност за
реализацијом читавог низа сензора и актуатора који у свом раду могу да користе хипереластичне мембране ПДМС-а.",
publisher = "Ministarstvo za prosvetu, nauku i tehnološki razvoj - Projekat TR32008",
title = "Реализација ПДМС (ПолиДиМетилСилоксанских) мембрана над дефинисаним отворима у Si {100} оријентације поступцима запреминског микромашинства",
url = "https://hdl.handle.net/21.15107/rcub_cer_3981"
}
Jović, V., Đinović, Z., Radovanović, F., Starčević, M., Lamovec, J., Smiljanić, M. M., Lazić, Ž., Popović, B.,& Vorkapić, M.. (2015). Реализација ПДМС (ПолиДиМетилСилоксанских) мембрана над дефинисаним отворима у Si {100} оријентације поступцима запреминског микромашинства. 
Ministarstvo za prosvetu, nauku i tehnološki razvoj - Projekat TR32008..
https://hdl.handle.net/21.15107/rcub_cer_3981
Jović V, Đinović Z, Radovanović F, Starčević M, Lamovec J, Smiljanić MM, Lazić Ž, Popović B, Vorkapić M. Реализација ПДМС (ПолиДиМетилСилоксанских) мембрана над дефинисаним отворима у Si {100} оријентације поступцима запреминског микромашинства. 2015;.
https://hdl.handle.net/21.15107/rcub_cer_3981 .
Jović, Vesna, Đinović, Zoran, Radovanović, Filip, Starčević, Marko, Lamovec, Jelena, Smiljanić, Milče M., Lazić, Žarko, Popović, Bogdan, Vorkapić, Miloš, "Реализација ПДМС (ПолиДиМетилСилоксанских) мембрана над дефинисаним отворима у Si {100} оријентације поступцима запреминског микромашинства" (2015),
https://hdl.handle.net/21.15107/rcub_cer_3981 .

Characterization of PDMS membranes fabricated by bulkmicromachining on silicon wafers

Jović, Vesna; Đinović, Zoran; Radovanović, Filip; Starčević, Marko; Lamovec, Jelena; Smiljanić, Milče; Lazić, Žarko

(Belgrade : Military Technical Institute, 2014)

TY  - CONF
AU  - Jović, Vesna
AU  - Đinović, Zoran
AU  - Radovanović, Filip
AU  - Starčević, Marko
AU  - Lamovec, Jelena
AU  - Smiljanić, Milče
AU  - Lazić, Žarko
PY  - 2014
UR  - http://dais.sanu.ac.rs/123456789/785
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/2605
AB  - In this paper we proposed microfabrication scheme for PDMS (Polydimethylsiloxane) thin membrane fabrication on Si micromachined cavities with square cross section. PDMS network samples for this research were synthesized with the same composition, which are Sylgard 184 (Dow Corning, USA) silicone elastomer base and silicone elastomer curing agent, volume ratio 10:1. Mechanical testing of PDMS elastic properties and bond strength between membranes and oxidized Si wafers, were investigated applying pressurized bulge testing In this paper experimentally determined dependence of the PDMS membrane deflection on pressure load for different membrane thicknesses and sizes of square cavities in Si wafers are given. Also, the influence of different types of Si wafer structuring by anisotropic wet chemical etching on membrane bonding strength were considered.
PB  - Belgrade : Military Technical Institute
C3  - 6th International Scientific Conference on Defensive Technologies, OTEH 2014, Belgrade, 09-10 October 2014: Proceedings
T1  - Characterization of PDMS membranes fabricated by bulkmicromachining on silicon wafers
SP  - 674
EP  - 679
UR  - https://hdl.handle.net/21.15107/rcub_dais_785
ER  - 
@conference{
author = "Jović, Vesna and Đinović, Zoran and Radovanović, Filip and Starčević, Marko and Lamovec, Jelena and Smiljanić, Milče and Lazić, Žarko",
year = "2014",
abstract = "In this paper we proposed microfabrication scheme for PDMS (Polydimethylsiloxane) thin membrane fabrication on Si micromachined cavities with square cross section. PDMS network samples for this research were synthesized with the same composition, which are Sylgard 184 (Dow Corning, USA) silicone elastomer base and silicone elastomer curing agent, volume ratio 10:1. Mechanical testing of PDMS elastic properties and bond strength between membranes and oxidized Si wafers, were investigated applying pressurized bulge testing In this paper experimentally determined dependence of the PDMS membrane deflection on pressure load for different membrane thicknesses and sizes of square cavities in Si wafers are given. Also, the influence of different types of Si wafer structuring by anisotropic wet chemical etching on membrane bonding strength were considered.",
publisher = "Belgrade : Military Technical Institute",
journal = "6th International Scientific Conference on Defensive Technologies, OTEH 2014, Belgrade, 09-10 October 2014: Proceedings",
title = "Characterization of PDMS membranes fabricated by bulkmicromachining on silicon wafers",
pages = "674-679",
url = "https://hdl.handle.net/21.15107/rcub_dais_785"
}
Jović, V., Đinović, Z., Radovanović, F., Starčević, M., Lamovec, J., Smiljanić, M.,& Lazić, Ž.. (2014). Characterization of PDMS membranes fabricated by bulkmicromachining on silicon wafers. in 6th International Scientific Conference on Defensive Technologies, OTEH 2014, Belgrade, 09-10 October 2014: Proceedings
Belgrade : Military Technical Institute., 674-679.
https://hdl.handle.net/21.15107/rcub_dais_785
Jović V, Đinović Z, Radovanović F, Starčević M, Lamovec J, Smiljanić M, Lazić Ž. Characterization of PDMS membranes fabricated by bulkmicromachining on silicon wafers. in 6th International Scientific Conference on Defensive Technologies, OTEH 2014, Belgrade, 09-10 October 2014: Proceedings. 2014;:674-679.
https://hdl.handle.net/21.15107/rcub_dais_785 .
Jović, Vesna, Đinović, Zoran, Radovanović, Filip, Starčević, Marko, Lamovec, Jelena, Smiljanić, Milče, Lazić, Žarko, "Characterization of PDMS membranes fabricated by bulkmicromachining on silicon wafers" in 6th International Scientific Conference on Defensive Technologies, OTEH 2014, Belgrade, 09-10 October 2014: Proceedings (2014):674-679,
https://hdl.handle.net/21.15107/rcub_dais_785 .

Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry

Đinović, Zoran; Tomić, Miloš; Manojlović, Lazo; Lazić, Žarko; Smiljanić, Milče M.

(IntechOpen, 2008)

TY  - CHAP
AU  - Đinović, Zoran
AU  - Tomić, Miloš
AU  - Manojlović, Lazo
AU  - Lazić, Žarko
AU  - Smiljanić, Milče M.
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4442
AB  - We presented here one contact-less optical technique based on low-coherence interferometry for measurement of thickness and uniformity of Si membranes. We performed a single-mode fiber-optic sensing configuration that is also applicable for the in situ measurement of membrane thickness. Space resolution was defined by diameter of spot of the impinging light of about 20 µm. The accuracy of the technique is about 100 nm.
PB  - IntechOpen
T2  - Micro Electronic and Mechanical Systems
T1  - Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry
SP  - 51
EP  - 60
DO  - 10.5772/7003
ER  - 
@inbook{
author = "Đinović, Zoran and Tomić, Miloš and Manojlović, Lazo and Lazić, Žarko and Smiljanić, Milče M.",
year = "2008",
abstract = "We presented here one contact-less optical technique based on low-coherence interferometry for measurement of thickness and uniformity of Si membranes. We performed a single-mode fiber-optic sensing configuration that is also applicable for the in situ measurement of membrane thickness. Space resolution was defined by diameter of spot of the impinging light of about 20 µm. The accuracy of the technique is about 100 nm.",
publisher = "IntechOpen",
journal = "Micro Electronic and Mechanical Systems",
booktitle = "Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry",
pages = "51-60",
doi = "10.5772/7003"
}
Đinović, Z., Tomić, M., Manojlović, L., Lazić, Ž.,& Smiljanić, M. M.. (2008). Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry. in Micro Electronic and Mechanical Systems
IntechOpen., 51-60.
https://doi.org/10.5772/7003
Đinović Z, Tomić M, Manojlović L, Lazić Ž, Smiljanić MM. Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry. in Micro Electronic and Mechanical Systems. 2008;:51-60.
doi:10.5772/7003 .
Đinović, Zoran, Tomić, Miloš, Manojlović, Lazo, Lazić, Žarko, Smiljanić, Milče M., "Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry" in Micro Electronic and Mechanical Systems (2008):51-60,
https://doi.org/10.5772/7003 . .

Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry

Đinović, Zoran; Tomić, Miloš; Manojlović, Lazo; Lazić, Žarko; Smiljanić, Milče

(Institute of Electrical and Electronics Engineers Inc., 2008)

TY  - CONF
AU  - Đinović, Zoran
AU  - Tomić, Miloš
AU  - Manojlović, Lazo
AU  - Lazić, Žarko
AU  - Smiljanić, Milče
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/422
AB  - In this paper we present a contactless technique for thickness measurement of chemically etched Si membranes. This technique is based on low-coherence interferometry performed by single-mode fiber-optic sensing configuration. We are able to measure the thickness of Si membranes with accuracy of about 40 run. We used the proposed technique for the fast measurement of thickness uniformity of central position of Si membranes with overall dimensions of 2x2 mm(2) all around one 3 inch (100) Si wafer with starting thickness of 380 Iim. Additionally, we measured the thickness uniformity of several membranes with central boss by scanning. The accuracy of the technique is about 100 nm.
PB  - Institute of Electrical and Electronics Engineers Inc.
C3  - 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
T1  - Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry
SP  - 321
DO  - 10.1109/ICMEL.2008.4559286
ER  - 
@conference{
author = "Đinović, Zoran and Tomić, Miloš and Manojlović, Lazo and Lazić, Žarko and Smiljanić, Milče",
year = "2008",
abstract = "In this paper we present a contactless technique for thickness measurement of chemically etched Si membranes. This technique is based on low-coherence interferometry performed by single-mode fiber-optic sensing configuration. We are able to measure the thickness of Si membranes with accuracy of about 40 run. We used the proposed technique for the fast measurement of thickness uniformity of central position of Si membranes with overall dimensions of 2x2 mm(2) all around one 3 inch (100) Si wafer with starting thickness of 380 Iim. Additionally, we measured the thickness uniformity of several membranes with central boss by scanning. The accuracy of the technique is about 100 nm.",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
journal = "26th International Conference on Microelectronics, Vols 1 and 2, Proceedings",
title = "Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry",
pages = "321",
doi = "10.1109/ICMEL.2008.4559286"
}
Đinović, Z., Tomić, M., Manojlović, L., Lazić, Ž.,& Smiljanić, M.. (2008). Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings
Institute of Electrical and Electronics Engineers Inc.., 321.
https://doi.org/10.1109/ICMEL.2008.4559286
Đinović Z, Tomić M, Manojlović L, Lazić Ž, Smiljanić M. Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry. in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings. 2008;:321.
doi:10.1109/ICMEL.2008.4559286 .
Đinović, Zoran, Tomić, Miloš, Manojlović, Lazo, Lazić, Žarko, Smiljanić, Milče, "Non-contact measurement of thickness uniformity of chemically etched Si membranes by fiber-optic low-coherence interferometry" in 26th International Conference on Microelectronics, Vols 1 and 2, Proceedings (2008):321,
https://doi.org/10.1109/ICMEL.2008.4559286 . .
1
1

Ambient-temperature operation of nonequilibrium magnetoconcentration infrared detectors in InSb and HgCdTe

Jakšić, Zoran; Đurić, Zoran G.; Jakšić, Olga; Jović, Vesna; Đinović, Zoran

(IEEE Computer Society, 2002)

TY  - CONF
AU  - Jakšić, Zoran
AU  - Đurić, Zoran G.
AU  - Jakšić, Olga
AU  - Jović, Vesna
AU  - Đinović, Zoran
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/86
AB  - We present a theoretical and experimental consideration of magnetoconcentration-based long-wavelength infrared photodetectors with nonequilibrium Auger-process suppression, designed for room-temperature operation. Our analysis includes the design, modeling and optimization of the detectors, their experimental fabrication and characterization. We used two narrow-bandgap direct semiconductors for our devices, indium antimonide (InSb) and mercury cadmium telluride (HgCdTe). We investigated all of the main properties of our detectors, including current-voltage characteristics, sensitivity, spectral noise, specific detectivity (D*) and response time. In our calculations we used our generalized expression for the absorption coefficient of HgCdTe that takes into account the influence of non-quantizing magnetic fields. Our experiments included more than a hundred of magnetoconcentration devices. Thermal noise was decreased, specific detectivity increased and overall performance improved in most of our photodetectors.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Ambient-temperature operation of nonequilibrium magnetoconcentration infrared detectors in InSb and HgCdTe
VL  - 1
SP  - 297
EP  - 300
DO  - 10.1109/MIEL.2002.1003196
ER  - 
@conference{
author = "Jakšić, Zoran and Đurić, Zoran G. and Jakšić, Olga and Jović, Vesna and Đinović, Zoran",
year = "2002",
abstract = "We present a theoretical and experimental consideration of magnetoconcentration-based long-wavelength infrared photodetectors with nonequilibrium Auger-process suppression, designed for room-temperature operation. Our analysis includes the design, modeling and optimization of the detectors, their experimental fabrication and characterization. We used two narrow-bandgap direct semiconductors for our devices, indium antimonide (InSb) and mercury cadmium telluride (HgCdTe). We investigated all of the main properties of our detectors, including current-voltage characteristics, sensitivity, spectral noise, specific detectivity (D*) and response time. In our calculations we used our generalized expression for the absorption coefficient of HgCdTe that takes into account the influence of non-quantizing magnetic fields. Our experiments included more than a hundred of magnetoconcentration devices. Thermal noise was decreased, specific detectivity increased and overall performance improved in most of our photodetectors.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Ambient-temperature operation of nonequilibrium magnetoconcentration infrared detectors in InSb and HgCdTe",
volume = "1",
pages = "297-300",
doi = "10.1109/MIEL.2002.1003196"
}
Jakšić, Z., Đurić, Z. G., Jakšić, O., Jović, V.,& Đinović, Z.. (2002). Ambient-temperature operation of nonequilibrium magnetoconcentration infrared detectors in InSb and HgCdTe. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 297-300.
https://doi.org/10.1109/MIEL.2002.1003196
Jakšić Z, Đurić ZG, Jakšić O, Jović V, Đinović Z. Ambient-temperature operation of nonequilibrium magnetoconcentration infrared detectors in InSb and HgCdTe. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:297-300.
doi:10.1109/MIEL.2002.1003196 .
Jakšić, Zoran, Đurić, Zoran G., Jakšić, Olga, Jović, Vesna, Đinović, Zoran, "Ambient-temperature operation of nonequilibrium magnetoconcentration infrared detectors in InSb and HgCdTe" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):297-300,
https://doi.org/10.1109/MIEL.2002.1003196 . .

Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)

Đinović, Zoran V.; Đurić, Zoran G.; Jakšić, Zoran; Kermendi, Ferenc; Roknić, R.

(Elsevier, 1991)

TY  - JOUR
AU  - Đinović, Zoran V.
AU  - Đurić, Zoran G.
AU  - Jakšić, Zoran
AU  - Kermendi, Ferenc
AU  - Roknić, R.
PY  - 1991
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4496
AB  - The method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, two-temperatures setup. The Hg partial pressure limits the surface composition of the layers. It is shown that the growth takes place under near-equilibrium conditions, except in the very beginning. Therefore, the time change of the surface composition and the composition gradient ∂x/∂z is very low, especially near the surface. The dependence of the surface composition and the thickness of the layers on the main process parameters is considered, utilizing the general ISOVPE model. Very good agreement between the experimental and calculated values has been found. A comparison of composition profiles obtained by the epitaxial growth from solid and liquid sources is given.
PB  - Elsevier
T2  - Journal of Crystal Growth
T1  - Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)
VL  - 108
IS  - 3-4
SP  - 710
EP  - 718
DO  - 10.1016/0022-0248(91)90251-Y
ER  - 
@article{
author = "Đinović, Zoran V. and Đurić, Zoran G. and Jakšić, Zoran and Kermendi, Ferenc and Roknić, R.",
year = "1991",
abstract = "The method of isothermal vapor phase epitaxy (ISOVPE) of Hg1-xCdxTe layers with fixed surface composition is presented. The epitaxial growth was performed from a Te-rich Hg1-yTey (y > 0.5) liquid source, in an open tube, two-temperatures setup. The Hg partial pressure limits the surface composition of the layers. It is shown that the growth takes place under near-equilibrium conditions, except in the very beginning. Therefore, the time change of the surface composition and the composition gradient ∂x/∂z is very low, especially near the surface. The dependence of the surface composition and the thickness of the layers on the main process parameters is considered, utilizing the general ISOVPE model. Very good agreement between the experimental and calculated values has been found. A comparison of composition profiles obtained by the epitaxial growth from solid and liquid sources is given.",
publisher = "Elsevier",
journal = "Journal of Crystal Growth",
title = "Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)",
volume = "108",
number = "3-4",
pages = "710-718",
doi = "10.1016/0022-0248(91)90251-Y"
}
Đinović, Z. V., Đurić, Z. G., Jakšić, Z., Kermendi, F.,& Roknić, R.. (1991). Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article). in Journal of Crystal Growth
Elsevier., 108(3-4), 710-718.
https://doi.org/10.1016/0022-0248(91)90251-Y
Đinović ZV, Đurić ZG, Jakšić Z, Kermendi F, Roknić R. Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article). in Journal of Crystal Growth. 1991;108(3-4):710-718.
doi:10.1016/0022-0248(91)90251-Y .
Đinović, Zoran V., Đurić, Zoran G., Jakšić, Zoran, Kermendi, Ferenc, Roknić, R., "Isothermal vapor phase epitaxy of (Hg,Cd) Te from Te-rich Hg1-yTey source(Article)" in Journal of Crystal Growth, 108, no. 3-4 (1991):710-718,
https://doi.org/10.1016/0022-0248(91)90251-Y . .
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