Zorba, T. T.

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4867c55e-b7cc-4c83-a01a-20ef4edbd29b
  • Zorba, T. T. (4)
  • Zorba, T. (1)
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Author's Bibliography

Far infrared and photoacoustic characterization of iodine doped PbTe

Nikolic, P. M.; Paraskevopoulos, Konstantinos M.; Aleksić, Obrad S.; Vujatovic, S. S.; Vasiljević-Radović, Dana; Zorba, T. T.; Blagojevic, V.; Nikolic, N.; Radovanović, M.; Nikolić, Maria Vesna

(National Institute of Optoelectronics, 2012)

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Aleksić, Obrad S.
AU  - Vujatovic, S. S.
AU  - Vasiljević-Radović, Dana
AU  - Zorba, T. T.
AU  - Blagojevic, V.
AU  - Nikolic, N.
AU  - Radovanović, M.
AU  - Nikolić, Maria Vesna
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/942
AB  - Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.
PB  - National Institute of Optoelectronics
T2  - Optoelectronics and Advanced Materials, Rapid Communications
T1  - Far infrared and photoacoustic characterization of iodine doped PbTe
VL  - 6
IS  - 3-4
SP  - 352
EP  - 356
UR  - https://hdl.handle.net/21.15107/rcub_cer_942
ER  - 
@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Aleksić, Obrad S. and Vujatovic, S. S. and Vasiljević-Radović, Dana and Zorba, T. T. and Blagojevic, V. and Nikolic, N. and Radovanović, M. and Nikolić, Maria Vesna",
year = "2012",
abstract = "Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.",
publisher = "National Institute of Optoelectronics",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared and photoacoustic characterization of iodine doped PbTe",
volume = "6",
number = "3-4",
pages = "352-356",
url = "https://hdl.handle.net/21.15107/rcub_cer_942"
}
Nikolic, P. M., Paraskevopoulos, K. M., Aleksić, O. S., Vujatovic, S. S., Vasiljević-Radović, D., Zorba, T. T., Blagojevic, V., Nikolic, N., Radovanović, M.,& Nikolić, M. V.. (2012). Far infrared and photoacoustic characterization of iodine doped PbTe. in Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics., 6(3-4), 352-356.
https://hdl.handle.net/21.15107/rcub_cer_942
Nikolic PM, Paraskevopoulos KM, Aleksić OS, Vujatovic SS, Vasiljević-Radović D, Zorba TT, Blagojevic V, Nikolic N, Radovanović M, Nikolić MV. Far infrared and photoacoustic characterization of iodine doped PbTe. in Optoelectronics and Advanced Materials, Rapid Communications. 2012;6(3-4):352-356.
https://hdl.handle.net/21.15107/rcub_cer_942 .
Nikolic, P. M., Paraskevopoulos, Konstantinos M., Aleksić, Obrad S., Vujatovic, S. S., Vasiljević-Radović, Dana, Zorba, T. T., Blagojevic, V., Nikolic, N., Radovanović, M., Nikolić, Maria Vesna, "Far infrared and photoacoustic characterization of iodine doped PbTe" in Optoelectronics and Advanced Materials, Rapid Communications, 6, no. 3-4 (2012):352-356,
https://hdl.handle.net/21.15107/rcub_cer_942 .
1

Far infrared study of local impurity modes of Boron-doped PbTe

Nikolic, P. M.; Paraskevopoulos, Konstantinos M.; Zachariadis, G.; Valasiadis, O.; Zorba, T. T.; Vujatovic, S. S.; Nikolic, N.; Aleksić, Obrad S.; Ivetic, T.; Cvetković, Olga; Blagojevic, V.; Nikolić, Maria Vesna

(Springer, New York, 2012)

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Zachariadis, G.
AU  - Valasiadis, O.
AU  - Zorba, T. T.
AU  - Vujatovic, S. S.
AU  - Nikolic, N.
AU  - Aleksić, Obrad S.
AU  - Ivetic, T.
AU  - Cvetković, Olga
AU  - Blagojevic, V.
AU  - Nikolić, Maria Vesna
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1007
AB  - PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
PB  - Springer, New York
T2  - Journal of Materials Science
T1  - Far infrared study of local impurity modes of Boron-doped PbTe
VL  - 47
IS  - 5
SP  - 2384
EP  - 2389
DO  - 10.1007/s10853-011-6057-8
ER  - 
@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Zachariadis, G. and Valasiadis, O. and Zorba, T. T. and Vujatovic, S. S. and Nikolic, N. and Aleksić, Obrad S. and Ivetic, T. and Cvetković, Olga and Blagojevic, V. and Nikolić, Maria Vesna",
year = "2012",
abstract = "PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.",
publisher = "Springer, New York",
journal = "Journal of Materials Science",
title = "Far infrared study of local impurity modes of Boron-doped PbTe",
volume = "47",
number = "5",
pages = "2384-2389",
doi = "10.1007/s10853-011-6057-8"
}
Nikolic, P. M., Paraskevopoulos, K. M., Zachariadis, G., Valasiadis, O., Zorba, T. T., Vujatovic, S. S., Nikolic, N., Aleksić, O. S., Ivetic, T., Cvetković, O., Blagojevic, V.,& Nikolić, M. V.. (2012). Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science
Springer, New York., 47(5), 2384-2389.
https://doi.org/10.1007/s10853-011-6057-8
Nikolic PM, Paraskevopoulos KM, Zachariadis G, Valasiadis O, Zorba TT, Vujatovic SS, Nikolic N, Aleksić OS, Ivetic T, Cvetković O, Blagojevic V, Nikolić MV. Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science. 2012;47(5):2384-2389.
doi:10.1007/s10853-011-6057-8 .
Nikolic, P. M., Paraskevopoulos, Konstantinos M., Zachariadis, G., Valasiadis, O., Zorba, T. T., Vujatovic, S. S., Nikolic, N., Aleksić, Obrad S., Ivetic, T., Cvetković, Olga, Blagojevic, V., Nikolić, Maria Vesna, "Far infrared study of local impurity modes of Boron-doped PbTe" in Journal of Materials Science, 47, no. 5 (2012):2384-2389,
https://doi.org/10.1007/s10853-011-6057-8 . .
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3

Temperature dependence of In1-xGaxSb reflectivity in the far infrared

Nikolic, P. M.; Paraskevopoulos, Konstantinos M.; Pavlidou, E.; Zorba, T. T.; Ivetic, T.; Vujatovic, S. S.; Aleksić, Obrad S.; Nikolic, N.; Cvetković, Olga; Blagojevic, V.; Nikolić, Maria Vesna

(Elsevier Science Sa, Lausanne, 2011)

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, E.
AU  - Zorba, T. T.
AU  - Ivetic, T.
AU  - Vujatovic, S. S.
AU  - Aleksić, Obrad S.
AU  - Nikolic, N.
AU  - Cvetković, Olga
AU  - Blagojevic, V.
AU  - Nikolić, Maria Vesna
PY  - 2011
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/926
AB  - Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
PB  - Elsevier Science Sa, Lausanne
T2  - Materials Chemistry and Physics
T1  - Temperature dependence of In1-xGaxSb reflectivity in the far infrared
VL  - 125
IS  - 1-2
SP  - 72
EP  - 76
DO  - 10.1016/j.matchemphys.2010.08.073
ER  - 
@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Vujatovic, S. S. and Aleksić, Obrad S. and Nikolic, N. and Cvetković, Olga and Blagojevic, V. and Nikolić, Maria Vesna",
year = "2011",
abstract = "Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.",
publisher = "Elsevier Science Sa, Lausanne",
journal = "Materials Chemistry and Physics",
title = "Temperature dependence of In1-xGaxSb reflectivity in the far infrared",
volume = "125",
number = "1-2",
pages = "72-76",
doi = "10.1016/j.matchemphys.2010.08.073"
}
Nikolic, P. M., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Vujatovic, S. S., Aleksić, O. S., Nikolic, N., Cvetković, O., Blagojevic, V.,& Nikolić, M. V.. (2011). Temperature dependence of In1-xGaxSb reflectivity in the far infrared. in Materials Chemistry and Physics
Elsevier Science Sa, Lausanne., 125(1-2), 72-76.
https://doi.org/10.1016/j.matchemphys.2010.08.073
Nikolic PM, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Vujatovic SS, Aleksić OS, Nikolic N, Cvetković O, Blagojevic V, Nikolić MV. Temperature dependence of In1-xGaxSb reflectivity in the far infrared. in Materials Chemistry and Physics. 2011;125(1-2):72-76.
doi:10.1016/j.matchemphys.2010.08.073 .
Nikolic, P. M., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Vujatovic, S. S., Aleksić, Obrad S., Nikolic, N., Cvetković, Olga, Blagojevic, V., Nikolić, Maria Vesna, "Temperature dependence of In1-xGaxSb reflectivity in the far infrared" in Materials Chemistry and Physics, 125, no. 1-2 (2011):72-76,
https://doi.org/10.1016/j.matchemphys.2010.08.073 . .
3
4
4

Far infrared properties of PbTe doped with Hg

Nikolic, P. M.; Vujatovic, S. S.; Paraskevopoulos, Konstantinos M.; Pavlidou, E.; Zorba, T. T.; Ivetic, T.; Cvetković, Olga; Aleksić, Obrad S.; Blagojevic, V.; Nikolić, Vesna

(National Institute of Optoelectronics, 2010)

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Vujatovic, S. S.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, E.
AU  - Zorba, T. T.
AU  - Ivetic, T.
AU  - Cvetković, Olga
AU  - Aleksić, Obrad S.
AU  - Blagojevic, V.
AU  - Nikolić, Vesna
PY  - 2010
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/647
AB  - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
PB  - National Institute of Optoelectronics
T2  - Optoelectronics and Advanced Materials, Rapid Communications
T1  - Far infrared properties of PbTe doped with Hg
VL  - 4
IS  - 2
SP  - 151
EP  - 153
UR  - https://hdl.handle.net/21.15107/rcub_dais_3433
ER  - 
@article{
author = "Nikolic, P. M. and Vujatovic, S. S. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Cvetković, Olga and Aleksić, Obrad S. and Blagojevic, V. and Nikolić, Vesna",
year = "2010",
abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.",
publisher = "National Institute of Optoelectronics",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared properties of PbTe doped with Hg",
volume = "4",
number = "2",
pages = "151-153",
url = "https://hdl.handle.net/21.15107/rcub_dais_3433"
}
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, O., Aleksić, O. S., Blagojevic, V.,& Nikolić, V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics., 4(2), 151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433
Nikolic PM, Vujatovic SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Cvetković O, Aleksić OS, Blagojevic V, Nikolić V. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433 .
Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, Olga, Aleksić, Obrad S., Blagojevic, V., Nikolić, Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153,
https://hdl.handle.net/21.15107/rcub_dais_3433 .
1
1

Far infrared properties of sintered NiO

Nikolić, Maria Vesna; Blagojević, Vladimir D.; Paraskevopoulos, Konstantinos M.; Zorba, T.; Vasiljević-Radović, Dana; Nikolić, Pantelija M.; Ristić, Momčilo M.

(Elsevier, 2007)

TY  - JOUR
AU  - Nikolić, Maria Vesna
AU  - Blagojević, Vladimir D.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Zorba, T.
AU  - Vasiljević-Radović, Dana
AU  - Nikolić, Pantelija M.
AU  - Ristić, Momčilo M.
PY  - 2007
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4269
AB  - Far infrared reflection spectra of NiO polycrystals sintered at 1100 °C for various times (30–240 min) were measured at room temperature using a FTIR Spectrometer—Brucker 113V. The measured spectra depended on the sintering time due to differences in the microstructural morphology of the material and were compared with the NiO single crystal reflectivity diagram. Numerical analyses of the experimental spectra were performed using Kramers-Kronig analysis, a four-parameter model of coupled oscillators and the effective medium modeling theory. In the three-component effective medium model based on Bruggeman's theory we assumed the presence of pores, intergranular material and crystalline grains. The intergranular material and crystalline grains were defined as single and coupled ionic oscillators.
PB  - Elsevier
T2  - Journal of the European Ceramic Society
T1  - Far infrared properties of sintered NiO
VL  - 27
IS  - 2-3
SP  - 469
EP  - 474
DO  - 10.1016/j.jeurceramsoc.2006.04.065
ER  - 
@article{
author = "Nikolić, Maria Vesna and Blagojević, Vladimir D. and Paraskevopoulos, Konstantinos M. and Zorba, T. and Vasiljević-Radović, Dana and Nikolić, Pantelija M. and Ristić, Momčilo M.",
year = "2007",
abstract = "Far infrared reflection spectra of NiO polycrystals sintered at 1100 °C for various times (30–240 min) were measured at room temperature using a FTIR Spectrometer—Brucker 113V. The measured spectra depended on the sintering time due to differences in the microstructural morphology of the material and were compared with the NiO single crystal reflectivity diagram. Numerical analyses of the experimental spectra were performed using Kramers-Kronig analysis, a four-parameter model of coupled oscillators and the effective medium modeling theory. In the three-component effective medium model based on Bruggeman's theory we assumed the presence of pores, intergranular material and crystalline grains. The intergranular material and crystalline grains were defined as single and coupled ionic oscillators.",
publisher = "Elsevier",
journal = "Journal of the European Ceramic Society",
title = "Far infrared properties of sintered NiO",
volume = "27",
number = "2-3",
pages = "469-474",
doi = "10.1016/j.jeurceramsoc.2006.04.065"
}
Nikolić, M. V., Blagojević, V. D., Paraskevopoulos, K. M., Zorba, T., Vasiljević-Radović, D., Nikolić, P. M.,& Ristić, M. M.. (2007). Far infrared properties of sintered NiO. in Journal of the European Ceramic Society
Elsevier., 27(2-3), 469-474.
https://doi.org/10.1016/j.jeurceramsoc.2006.04.065
Nikolić MV, Blagojević VD, Paraskevopoulos KM, Zorba T, Vasiljević-Radović D, Nikolić PM, Ristić MM. Far infrared properties of sintered NiO. in Journal of the European Ceramic Society. 2007;27(2-3):469-474.
doi:10.1016/j.jeurceramsoc.2006.04.065 .
Nikolić, Maria Vesna, Blagojević, Vladimir D., Paraskevopoulos, Konstantinos M., Zorba, T., Vasiljević-Radović, Dana, Nikolić, Pantelija M., Ristić, Momčilo M., "Far infrared properties of sintered NiO" in Journal of the European Ceramic Society, 27, no. 2-3 (2007):469-474,
https://doi.org/10.1016/j.jeurceramsoc.2006.04.065 . .
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