TY  - JOUR
AU  - Todorović, D. M.
AU  - Rabasovic, M. D.
AU  - Markushev, D. D.
AU  - Jović, Vesna
AU  - Radulović, Katarina
PY  - 2017
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/2193
AB  - Rectangular silicon cantilevers are studied by the photoacoustic (PA) elastic bending method. Experimental signals versus modulation frequency of the excitation optical beam are measured and analyzed in a frequency range from 20 Hz to 50 000 Hz. The procedure for experimental signal correction to eliminate the frequency characteristics of the measuring system is given. The corrected experimental signal shows a good correlation with theoretically calculated PA signal at frequencies below 32 000 Hz. The corrected experimental PA elastic bending signals for cantilevers with different thicknesses are analyzed. The experimental results allow identifying the resonant frequency (the first resonant mode) of the cantilever vibrations. These values are in good agreement with the theoretically computed values. A theoretical model of the optically excited Si cantilever is derived, taking into account plasmaelastic, thermoelastic, and thermodiffusion mechanisms. Dynamic relations for the amplitude and phase of electronic and thermal elastic vibrations in optically excited cantilevers are derived. The theoretical model is compared to the experimental results.
PB  - Springer/Plenum Publishers, New York
T2  - International Journal of Thermophysics
T1  - Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method
VL  - 38
IS  - 3
DO  - 10.1007/s10765-016-2175-5
ER  - 

@article{
author = "Todorović, D. M. and Rabasovic, M. D. and Markushev, D. D. and Jović, Vesna and Radulović, Katarina",
year = "2017",
abstract = "Rectangular silicon cantilevers are studied by the photoacoustic (PA) elastic bending method. Experimental signals versus modulation frequency of the excitation optical beam are measured and analyzed in a frequency range from 20 Hz to 50 000 Hz. The procedure for experimental signal correction to eliminate the frequency characteristics of the measuring system is given. The corrected experimental signal shows a good correlation with theoretically calculated PA signal at frequencies below 32 000 Hz. The corrected experimental PA elastic bending signals for cantilevers with different thicknesses are analyzed. The experimental results allow identifying the resonant frequency (the first resonant mode) of the cantilever vibrations. These values are in good agreement with the theoretically computed values. A theoretical model of the optically excited Si cantilever is derived, taking into account plasmaelastic, thermoelastic, and thermodiffusion mechanisms. Dynamic relations for the amplitude and phase of electronic and thermal elastic vibrations in optically excited cantilevers are derived. The theoretical model is compared to the experimental results.",
publisher = "Springer/Plenum Publishers, New York",
journal = "International Journal of Thermophysics",
title = "Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method",
volume = "38",
number = "3",
doi = "10.1007/s10765-016-2175-5"
}

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, V.,& Radulović, K.. (2017). Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method. in International Journal of Thermophysics
Springer/Plenum Publishers, New York., 38(3).
https://doi.org/10.1007/s10765-016-2175-5

Todorović DM, Rabasovic MD, Markushev DD, Jović V, Radulović K. Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method. in International Journal of Thermophysics. 2017;38(3).
doi:10.1007/s10765-016-2175-5 .

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, Vesna, Radulović, Katarina, "Study of Silicon Cantilevers by the Photoacoustic Elastic Bending Method" in International Journal of Thermophysics, 38, no. 3 (2017),
https://doi.org/10.1007/s10765-016-2175-5 . .

TY  - JOUR
AU  - Todorović, D. M.
AU  - Rabasovic, M D
AU  - Markushev, D D
AU  - Jović, Vesna
AU  - Radulović, Katarina
AU  - Sarajlić, Milija
PY  - 2015
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1652
AB  - Photoacoustic (PA) elastic bending effects have been studied and used to develop the experimental non-contact and non-destructive method that make it possible to investigate the optical, thermal, and elastic properties of thin films. A theoretical model for optically excited thin films on a Si membrane, which includes plasmaelastic, thermoelastic, and thermodiffusion mechanisms, is given. Relations for the PA elastic bending signal in the optically excited two-layer Si membrane are derived. The method was verified by measuring the experimental amplitude and phase of the PA elastic bending of the thin film on Si square membranes and compared with the theoretically calculated spectra. The analysis shows that it is possible to obtain the optical, thermal, and elastic parameters of a film thinner than 1 mu m.
PB  - Springer/Plenum Publishers, New York
T2  - International Journal of Thermophysics
T1  - Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes
VL  - 36
IS  - 5-6
SP  - 1016
EP  - 1028
DO  - 10.1007/s10765-014-1801-3
ER  - 

@article{
author = "Todorović, D. M. and Rabasovic, M D and Markushev, D D and Jović, Vesna and Radulović, Katarina and Sarajlić, Milija",
year = "2015",
abstract = "Photoacoustic (PA) elastic bending effects have been studied and used to develop the experimental non-contact and non-destructive method that make it possible to investigate the optical, thermal, and elastic properties of thin films. A theoretical model for optically excited thin films on a Si membrane, which includes plasmaelastic, thermoelastic, and thermodiffusion mechanisms, is given. Relations for the PA elastic bending signal in the optically excited two-layer Si membrane are derived. The method was verified by measuring the experimental amplitude and phase of the PA elastic bending of the thin film on Si square membranes and compared with the theoretically calculated spectra. The analysis shows that it is possible to obtain the optical, thermal, and elastic parameters of a film thinner than 1 mu m.",
publisher = "Springer/Plenum Publishers, New York",
journal = "International Journal of Thermophysics",
title = "Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes",
volume = "36",
number = "5-6",
pages = "1016-1028",
doi = "10.1007/s10765-014-1801-3"
}

Todorović, D. M., Rabasovic, M. D., Markushev, D. D., Jović, V., Radulović, K.,& Sarajlić, M.. (2015). Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes. in International Journal of Thermophysics
Springer/Plenum Publishers, New York., 36(5-6), 1016-1028.
https://doi.org/10.1007/s10765-014-1801-3

Todorović DM, Rabasovic MD, Markushev DD, Jović V, Radulović K, Sarajlić M. Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes. in International Journal of Thermophysics. 2015;36(5-6):1016-1028.
doi:10.1007/s10765-014-1801-3 .

Todorović, D. M., Rabasovic, M D, Markushev, D D, Jović, Vesna, Radulović, Katarina, Sarajlić, Milija, "Photoacoustic Elastic Bending Method: Characterization of Thin Films on Silicon Membranes" in International Journal of Thermophysics, 36, no. 5-6 (2015):1016-1028,
https://doi.org/10.1007/s10765-014-1801-3 . .