TY  - JOUR
AU  - Ristić, Goran
AU  - Ilić, Stefan D.
AU  - Andjelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Lalena, Antonio M.
AU  - Krstić, Miloš
AU  - Jaksić, Aleksandar
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5504
AB  - The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.
PB  - Elsevier
T2  - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
T1  - Sensitivity and fading of irradiated RADFETs with different gate voltages
VL  - 1029
SP  - 166473
DO  - 10.1016/j.nima.2022.166473
ER  - 

@article{
author = "Ristić, Goran and Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Lalena, Antonio M. and Krstić, Miloš and Jaksić, Aleksandar",
year = "2022",
abstract = "The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.",
publisher = "Elsevier",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
title = "Sensitivity and fading of irradiated RADFETs with different gate voltages",
volume = "1029",
pages = "166473",
doi = "10.1016/j.nima.2022.166473"
}

Ristić, G., Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Lalena, A. M., Krstić, M.,& Jaksić, A.. (2022). Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Elsevier., 1029, 166473.
https://doi.org/10.1016/j.nima.2022.166473

Ristić G, Ilić SD, Andjelković MS, Duane R, Palma AJ, Lalena AM, Krstić M, Jaksić A. Sensitivity and fading of irradiated RADFETs with different gate voltages. in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2022;1029:166473.
doi:10.1016/j.nima.2022.166473 .

Ristić, Goran, Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Lalena, Antonio M., Krstić, Miloš, Jaksić, Aleksandar, "Sensitivity and fading of irradiated RADFETs with different gate voltages" in Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1029 (2022):166473,
https://doi.org/10.1016/j.nima.2022.166473 . .

TY  - JOUR
AU  - Andjelković, Marko S.
AU  - Marjanović, Miloš
AU  - Chen, Junchao
AU  - Ilić, Stefan
AU  - Ristić, Goran
AU  - Krstić, Miloš
PY  - 2022
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5422
AB  - The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.
PB  - Elsevier
T2  - Microelectronics Reliability
T1  - PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients
VL  - 138
SP  - 114726
DO  - 10.1016/j.microrel.2022.114726
ER  - 

@article{
author = "Andjelković, Marko S. and Marjanović, Miloš and Chen, Junchao and Ilić, Stefan and Ristić, Goran and Krstić, Miloš",
year = "2022",
abstract = "The bulk built-in current sensor (BBICS) is a cost-effective solution for detection of energetic particle strikes in integrated circuits. With an appropriate number of BBICSs distributed across the chip, the soft error locations can be identified, and the dynamic fault-tolerant mechanisms can be activated locally to correct the soft errors in the affected logic. In this work, we introduce a pulse stretching BBICS (PS-BBICS) constructed by connecting a standard BBICS and a custom-designed pulse stretching cell. The aim of PS-BBICS is to enable the on-chip measurement of the single event transient (SET) pulse width, allowing to detect the linear energy transfer (LET) of incident particles, and thus assess more accurately the radiation conditions. Based on Spectre simulations, we have shown that for the LET from 1 to 100 MeV cm2 mg−1, the SET pulse width detected by PS-BBICS varies by 620–800 ps. The threshold LET of PS-BBICS increases linearly with the number of monitored inverters, and it is around 1.7 MeV cm2 mg−1 for ten monitored inverters. On the other hand, the SET pulse width is independent of the number of monitored inverters for LET > 4 MeV cm2 mg−1. It was shown that supply voltage, temperature and process variations have strong impact on the response of PS-BBICS.",
publisher = "Elsevier",
journal = "Microelectronics Reliability",
title = "PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients",
volume = "138",
pages = "114726",
doi = "10.1016/j.microrel.2022.114726"
}

Andjelković, M. S., Marjanović, M., Chen, J., Ilić, S., Ristić, G.,& Krstić, M.. (2022). PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients. in Microelectronics Reliability
Elsevier., 138, 114726.
https://doi.org/10.1016/j.microrel.2022.114726

Andjelković MS, Marjanović M, Chen J, Ilić S, Ristić G, Krstić M. PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients. in Microelectronics Reliability. 2022;138:114726.
doi:10.1016/j.microrel.2022.114726 .

Andjelković, Marko S., Marjanović, Miloš, Chen, Junchao, Ilić, Stefan, Ristić, Goran, Krstić, Miloš, "PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients" in Microelectronics Reliability, 138 (2022):114726,
https://doi.org/10.1016/j.microrel.2022.114726 . .

TY  - JOUR
AU  - Ilić, Stefan D.
AU  - Andjelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Sarajlić, Milija
AU  - Stanković, Srboljub
AU  - Ristić, Goran
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4911
AB  - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.
PB  - Elsevier
T2  - Microelectronics Reliability
T1  - Recharging process of commercial floating-gate MOS transistor in dosimetry application
VL  - 126
SP  - 114322
DO  - 10.1016/j.microrel.2021.114322
ER  - 

@article{
author = "Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Sarajlić, Milija and Stanković, Srboljub and Ristić, Goran",
year = "2021",
abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.",
publisher = "Elsevier",
journal = "Microelectronics Reliability",
title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application",
volume = "126",
pages = "114322",
doi = "10.1016/j.microrel.2021.114322"
}

Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Sarajlić, M., Stanković, S.,& Ristić, G.. (2021). Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability
Elsevier., 126, 114322.
https://doi.org/10.1016/j.microrel.2021.114322

Ilić SD, Andjelković MS, Duane R, Palma AJ, Sarajlić M, Stanković S, Ristić G. Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability. 2021;126:114322.
doi:10.1016/j.microrel.2021.114322 .

Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran, "Recharging process of commercial floating-gate MOS transistor in dosimetry application" in Microelectronics Reliability, 126 (2021):114322,
https://doi.org/10.1016/j.microrel.2021.114322 . .