TY  - JOUR
AU  - Todorović, Dragan M.
AU  - Nikolić, Pantelija M
AU  - Dramićanin, Miroslav
AU  - Vasiljević, Dana G.
AU  - Ristovski, Zoran D.
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/7471
AB  - Photoacoustic frequency heat‐transmission technique is used to study thermal and carrier transport properties in low‐doped silicon wafers. Amplitude and phase photoacoustic signals as a function of modulation frequency of incident optical beam are measured using different experimental conditions. The thermal diffusivity, coefficient of excess carrier diffusion, carrier lifetime, and the surface recombination velocity were determined by comparing experimental results and calculated theoretical photoacoustic signals. The suitability of the photoacoustic frequency heat‐transmission technique as a contactless diagnostic method is assessed in comparison with the more conventional photothermal deflection and photothermal modulated reflection techniques.
PB  - AIP Publishing
T2  - Journal of Applied Physics
T1  - Photoacoustic frequency heat‐transmission technique: Thermal and carrier transport parameters measurements in silicon
VL  - 78
IS  - 9
SP  - 5750
EP  - 5755
DO  - /10.1063/1.359637
ER  - 

@article{
author = "Todorović, Dragan M. and Nikolić, Pantelija M and Dramićanin, Miroslav and Vasiljević, Dana G. and Ristovski, Zoran D.",
year = "1995",
abstract = "Photoacoustic frequency heat‐transmission technique is used to study thermal and carrier transport properties in low‐doped silicon wafers. Amplitude and phase photoacoustic signals as a function of modulation frequency of incident optical beam are measured using different experimental conditions. The thermal diffusivity, coefficient of excess carrier diffusion, carrier lifetime, and the surface recombination velocity were determined by comparing experimental results and calculated theoretical photoacoustic signals. The suitability of the photoacoustic frequency heat‐transmission technique as a contactless diagnostic method is assessed in comparison with the more conventional photothermal deflection and photothermal modulated reflection techniques.",
publisher = "AIP Publishing",
journal = "Journal of Applied Physics",
title = "Photoacoustic frequency heat‐transmission technique: Thermal and carrier transport parameters measurements in silicon",
volume = "78",
number = "9",
pages = "5750-5755",
doi = "/10.1063/1.359637"
}

Todorović, D. M., Nikolić, P. M., Dramićanin, M., Vasiljević, D. G.,& Ristovski, Z. D.. (1995). Photoacoustic frequency heat‐transmission technique: Thermal and carrier transport parameters measurements in silicon. in Journal of Applied Physics
AIP Publishing., 78(9), 5750-5755.
https://doi.org//10.1063/1.359637

Todorović DM, Nikolić PM, Dramićanin M, Vasiljević DG, Ristovski ZD. Photoacoustic frequency heat‐transmission technique: Thermal and carrier transport parameters measurements in silicon. in Journal of Applied Physics. 1995;78(9):5750-5755.
doi:/10.1063/1.359637 .

Todorović, Dragan M., Nikolić, Pantelija M, Dramićanin, Miroslav, Vasiljević, Dana G., Ristovski, Zoran D., "Photoacoustic frequency heat‐transmission technique: Thermal and carrier transport parameters measurements in silicon" in Journal of Applied Physics, 78, no. 9 (1995):5750-5755,
https://doi.org//10.1063/1.359637 . .

TY  - JOUR
AU  - Dramićanin, Miroslav
AU  - Ristovski, Zoran D.
AU  - Nikolić, Pantelija M.
AU  - Vasiljević, Dana G.
AU  - Todorović, Dragan M.
PY  - 1995
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/7468
AB  - Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
PB  - The American Physical Society
T2  - Physical Review B
T1  - Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
VL  - 51
IS  - 20
SP  - 14226
EP  - 14232
DO  - 10.1103/PhysRevB.51.14226
ER  - 

@article{
author = "Dramićanin, Miroslav and Ristovski, Zoran D. and Nikolić, Pantelija M. and Vasiljević, Dana G. and Todorović, Dragan M.",
year = "1995",
abstract = "Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.",
publisher = "The American Physical Society",
journal = "Physical Review B",
title = "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal",
volume = "51",
number = "20",
pages = "14226-14232",
doi = "10.1103/PhysRevB.51.14226"
}

Dramićanin, M., Ristovski, Z. D., Nikolić, P. M., Vasiljević, D. G.,& Todorović, D. M.. (1995). Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B
The American Physical Society., 51(20), 14226-14232.
https://doi.org/10.1103/PhysRevB.51.14226

Dramićanin M, Ristovski ZD, Nikolić PM, Vasiljević DG, Todorović DM. Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B. 1995;51(20):14226-14232.
doi:10.1103/PhysRevB.51.14226 .

Dramićanin, Miroslav, Ristovski, Zoran D., Nikolić, Pantelija M., Vasiljević, Dana G., Todorović, Dragan M., "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal" in Physical Review B, 51, no. 20 (1995):14226-14232,
https://doi.org/10.1103/PhysRevB.51.14226 . .