TY  - JOUR
AU  - Nikolić, P.M.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
AU  - Bojičić, A.I.
AU  - Luković, D.
AU  - Savić, S.
AU  - Blagojević, V.
AU  - Vujatović, S.
AU  - Lukić, L.
AU  - Urošević, D.
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5691
AB  - Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in the GaSe single crystal was investigated using photoacoustic (PA) frequency transmission techniques. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the c-axis ( $\vec{E}\perp c$) and then parallel to it ( $\vec{E}\Vert c$). An obvious difference in the PA phase and amplitude spectra of the same sample for these two cases was shown. The thermal diffusivity DT obtained by the fitting procedure for these two orientations of the electric field were calculated as $D_{T/\!/}=0.46\times10^{-5}$m2/s and $D_{T\perp}=0.62\times10^{-6}$m2/s eg. Their ratio is about 7.4. The electronic transport parameters are also given. The carrier diffusion coefficient D$_{\rm II}$ is $0.53\times10^{-3}$ m2/s and D$_{\perp}$ is $0.3\times10^{-3}$ m2/s.
PB  - EDP Sciences
T2  - J. Phys. IV France
T1  - Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method
VL  - 125
SP  - 427
EP  - 429
DO  - 10.1051/jp4:2005125100
ER  - 

@article{
author = "Nikolić, P.M. and Vasiljević-Radović, Dana and Radulović, Katarina and Bojičić, A.I. and Luković, D. and Savić, S. and Blagojević, V. and Vujatović, S. and Lukić, L. and Urošević, D.",
year = "2005",
abstract = "Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in the GaSe single crystal was investigated using photoacoustic (PA) frequency transmission techniques. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the c-axis ( $\vec{E}\perp c$) and then parallel to it ( $\vec{E}\Vert c$). An obvious difference in the PA phase and amplitude spectra of the same sample for these two cases was shown. The thermal diffusivity DT obtained by the fitting procedure for these two orientations of the electric field were calculated as $D_{T/\!/}=0.46\times10^{-5}$m2/s and $D_{T\perp}=0.62\times10^{-6}$m2/s eg. Their ratio is about 7.4. The electronic transport parameters are also given. The carrier diffusion coefficient D$_{\rm II}$ is $0.53\times10^{-3}$ m2/s and D$_{\perp}$ is $0.3\times10^{-3}$ m2/s.",
publisher = "EDP Sciences",
journal = "J. Phys. IV France",
title = "Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method",
volume = "125",
pages = "427-429",
doi = "10.1051/jp4:2005125100"
}

Nikolić, P.M., Vasiljević-Radović, D., Radulović, K., Bojičić, A.I., Luković, D., Savić, S., Blagojević, V., Vujatović, S., Lukić, L.,& Urošević, D.. (2005). Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method. in J. Phys. IV France
EDP Sciences., 125, 427-429.
https://doi.org/10.1051/jp4:2005125100

Nikolić P, Vasiljević-Radović D, Radulović K, Bojičić A, Luković D, Savić S, Blagojević V, Vujatović S, Lukić L, Urošević D. Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method. in J. Phys. IV France. 2005;125:427-429.
doi:10.1051/jp4:2005125100 .

Nikolić, P.M., Vasiljević-Radović, Dana, Radulović, Katarina, Bojičić, A.I., Luković, D., Savić, S., Blagojević, V., Vujatović, S., Lukić, L., Urošević, D., "Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method" in J. Phys. IV France, 125 (2005):427-429,
https://doi.org/10.1051/jp4:2005125100 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P. M.
AU  - Bojičić, A.
AU  - Smiljanić, Miloljub
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3082
AB  - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Photopyropiezoelectric elastic bending method
VL  - 74
IS  - 1
SP  - 635
EP  - 638
DO  - 10.1063/1.1520317
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P. M. and Bojičić, A. and Smiljanić, Miloljub and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2003",
abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Photopyropiezoelectric elastic bending method",
volume = "74",
number = "1",
pages = "635-638",
doi = "10.1063/1.1520317"
}

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, M., Vasiljević-Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments
AIP Publishing., 74(1), 635-638.
https://doi.org/10.1063/1.1520317

Todorović DM, Nikolić PM, Bojičić A, Smiljanić M, Vasiljević-Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638.
doi:10.1063/1.1520317 .

Todorović, D. M., Nikolić, P. M., Bojičić, A., Smiljanić, Miloljub, Vasiljević-Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638,
https://doi.org/10.1063/1.1520317 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Smiljanić, Miloljub
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/84
AB  - The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
VL  - 1
SP  - 231
EP  - 234
DO  - 10.1109/MIEL.2002.1003182
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2002",
abstract = "The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure",
volume = "1",
pages = "231-234",
doi = "10.1109/MIEL.2002.1003182"
}

Todorović, D. M., Nikolić, P.M., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2002). Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 231-234.
https://doi.org/10.1109/MIEL.2002.1003182

Todorović DM, Nikolić P, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:231-234.
doi:10.1109/MIEL.2002.1003182 .

Todorović, D. M., Nikolić, P.M., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):231-234,
https://doi.org/10.1109/MIEL.2002.1003182 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Smiljanić, Miloljub
AU  - Petrović, R.
AU  - Bojicić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/25
AB  - The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - The Schottky barrier contribution to photoacoustic effect in Au-Si system
VL  - 1
SP  - 189
EP  - 192
DO  - 10.1109/ICMEL.2000.840552
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Smiljanić, Miloljub and Petrović, R. and Bojicić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "The Schottky barrier contribution to photoacoustic effect in Au-Si system",
volume = "1",
pages = "189-192",
doi = "10.1109/ICMEL.2000.840552"
}

Todorović, D. M., Nikolić, P.M., Smiljanić, M., Petrović, R., Bojicić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 189-192.
https://doi.org/10.1109/ICMEL.2000.840552

Todorović DM, Nikolić P, Smiljanić M, Petrović R, Bojicić A, Vasiljević-Radović D, Radulović K. The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:189-192.
doi:10.1109/ICMEL.2000.840552 .

Todorović, D. M., Nikolić, P.M., Smiljanić, Miloljub, Petrović, R., Bojicić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "The Schottky barrier contribution to photoacoustic effect in Au-Si system" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):189-192,
https://doi.org/10.1109/ICMEL.2000.840552 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Elazar, J.
AU  - Smiljanić, Miloljub
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/23
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
VL  - 1
SP  - 247
EP  - 250
DO  - 10.1109/ICMEL.2000.840566
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Elazar, J. and Smiljanić, Miloljub and Bojičić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
volume = "1",
pages = "247-250",
doi = "10.1109/ICMEL.2000.840566"
}

Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, M., Bojičić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566

Todorović DM, Nikolić P, Elazar J, Smiljanić M, Bojičić A, Vasiljević-Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566 .

Todorović, D. M., Nikolić, P.M., Elazar, J., Smiljanić, Miloljub, Bojičić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 . .

TY  - JOUR
AU  - Todorović, D.M.
AU  - Nikolić, P.M.
AU  - Bojičić, A.I.
AU  - Radulović, K.T.
PY  - 1997
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5708
AB  - The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.
PB  - The American Physical Society
T2  - Phys. Rev. B
T1  - Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors
VL  - 55
IS  - 23
SP  - 15631
EP  - 15642
DO  - 10.1103/PhysRevB.55.15631
ER  - 

@article{
author = "Todorović, D.M. and Nikolić, P.M. and Bojičić, A.I. and Radulović, K.T.",
year = "1997",
abstract = "The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.",
publisher = "The American Physical Society",
journal = "Phys. Rev. B",
title = "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors",
volume = "55",
number = "23",
pages = "15631-15642",
doi = "10.1103/PhysRevB.55.15631"
}

Todorović, D.M., Nikolić, P.M., Bojičić, A.I.,& Radulović, K.T.. (1997). Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B
The American Physical Society., 55(23), 15631-15642.
https://doi.org/10.1103/PhysRevB.55.15631

Todorović D, Nikolić P, Bojičić A, Radulović K. Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B. 1997;55(23):15631-15642.
doi:10.1103/PhysRevB.55.15631 .

Todorović, D.M., Nikolić, P.M., Bojičić, A.I., Radulović, K.T., "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors" in Phys. Rev. B, 55, no. 23 (1997):15631-15642,
https://doi.org/10.1103/PhysRevB.55.15631 . .

TY  - JOUR
AU  - Todorović, D. M.
AU  - Nikolić, P. M.
AU  - Vasiljević, Dana
AU  - Dramićanin, Miroslav
PY  - 1994
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3103
AB  - In this work the possibility of simultaneous determination of thermal and transport properties of thin films using a photoacoustic method was investigated. The properties of amorphous GeSe thin films, which were evaporated on quartz substrata, were examined by measuring their amplitude and phase photoacoustic spectra as a function of the modulated optical laser beam frequency. The measurements were performed in a specially constructed photoacoustic cell which enabled excitation of the sample on one side and detection of the acoustic response on the other. Thermal diffusivity and transport properties (diffusivity coefficient, recombination time, and the surface recombination velocity) of the GeSe thin films were determined by comparing of the experimental results and the calculated theoretical photoacoustic spectra.
PB  - AIP Publishing
T2  - Journal of Applied Physics
T1  - Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films
VL  - 76
IS  - 7
SP  - 4012
EP  - 4021
DO  - 10.1063/1.357348
ER  - 

@article{
author = "Todorović, D. M. and Nikolić, P. M. and Vasiljević, Dana and Dramićanin, Miroslav",
year = "1994",
abstract = "In this work the possibility of simultaneous determination of thermal and transport properties of thin films using a photoacoustic method was investigated. The properties of amorphous GeSe thin films, which were evaporated on quartz substrata, were examined by measuring their amplitude and phase photoacoustic spectra as a function of the modulated optical laser beam frequency. The measurements were performed in a specially constructed photoacoustic cell which enabled excitation of the sample on one side and detection of the acoustic response on the other. Thermal diffusivity and transport properties (diffusivity coefficient, recombination time, and the surface recombination velocity) of the GeSe thin films were determined by comparing of the experimental results and the calculated theoretical photoacoustic spectra.",
publisher = "AIP Publishing",
journal = "Journal of Applied Physics",
title = "Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films",
volume = "76",
number = "7",
pages = "4012-4021",
doi = "10.1063/1.357348"
}

Todorović, D. M., Nikolić, P. M., Vasiljević, D.,& Dramićanin, M.. (1994). Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films. in Journal of Applied Physics
AIP Publishing., 76(7), 4012-4021.
https://doi.org/10.1063/1.357348

Todorović DM, Nikolić PM, Vasiljević D, Dramićanin M. Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films. in Journal of Applied Physics. 1994;76(7):4012-4021.
doi:10.1063/1.357348 .

Todorović, D. M., Nikolić, P. M., Vasiljević, Dana, Dramićanin, Miroslav, "Photoacoustic investigation of thermal and transport properties of amorphous GeSe thin films" in Journal of Applied Physics, 76, no. 7 (1994):4012-4021,
https://doi.org/10.1063/1.357348 . .