TY  - JOUR
AU  - Nikolic, P. M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Aleksić, Obrad S.
AU  - Vujatovic, S. S.
AU  - Vasiljević-Radović, Dana
AU  - Zorba, T. T.
AU  - Blagojevic, V.
AU  - Nikolic, N.
AU  - Radovanović, M.
AU  - Nikolić, Maria Vesna
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/942
AB  - Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.
PB  - National Institute of Optoelectronics
T2  - Optoelectronics and Advanced Materials, Rapid Communications
T1  - Far infrared and photoacoustic characterization of iodine doped PbTe
VL  - 6
IS  - 3-4
SP  - 352
EP  - 356
UR  - https://hdl.handle.net/21.15107/rcub_cer_942
ER  - 

@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Aleksić, Obrad S. and Vujatovic, S. S. and Vasiljević-Radović, Dana and Zorba, T. T. and Blagojevic, V. and Nikolic, N. and Radovanović, M. and Nikolić, Maria Vesna",
year = "2012",
abstract = "Single crystal samples of PbTe doped with PbI2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm(-1) with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.",
publisher = "National Institute of Optoelectronics",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared and photoacoustic characterization of iodine doped PbTe",
volume = "6",
number = "3-4",
pages = "352-356",
url = "https://hdl.handle.net/21.15107/rcub_cer_942"
}

Nikolic, P. M., Paraskevopoulos, K. M., Aleksić, O. S., Vujatovic, S. S., Vasiljević-Radović, D., Zorba, T. T., Blagojevic, V., Nikolic, N., Radovanović, M.,& Nikolić, M. V.. (2012). Far infrared and photoacoustic characterization of iodine doped PbTe. in Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics., 6(3-4), 352-356.
https://hdl.handle.net/21.15107/rcub_cer_942

Nikolic PM, Paraskevopoulos KM, Aleksić OS, Vujatovic SS, Vasiljević-Radović D, Zorba TT, Blagojevic V, Nikolic N, Radovanović M, Nikolić MV. Far infrared and photoacoustic characterization of iodine doped PbTe. in Optoelectronics and Advanced Materials, Rapid Communications. 2012;6(3-4):352-356.
https://hdl.handle.net/21.15107/rcub_cer_942 .

Nikolic, P. M., Paraskevopoulos, Konstantinos M., Aleksić, Obrad S., Vujatovic, S. S., Vasiljević-Radović, Dana, Zorba, T. T., Blagojevic, V., Nikolic, N., Radovanović, M., Nikolić, Maria Vesna, "Far infrared and photoacoustic characterization of iodine doped PbTe" in Optoelectronics and Advanced Materials, Rapid Communications, 6, no. 3-4 (2012):352-356,
https://hdl.handle.net/21.15107/rcub_cer_942 .

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Zachariadis, G.
AU  - Valasiadis, O.
AU  - Zorba, T. T.
AU  - Vujatovic, S. S.
AU  - Nikolic, N.
AU  - Aleksić, Obrad S.
AU  - Ivetic, T.
AU  - Cvetković, Olga
AU  - Blagojevic, V.
AU  - Nikolić, Maria Vesna
PY  - 2012
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1007
AB  - PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
PB  - Springer, New York
T2  - Journal of Materials Science
T1  - Far infrared study of local impurity modes of Boron-doped PbTe
VL  - 47
IS  - 5
SP  - 2384
EP  - 2389
DO  - 10.1007/s10853-011-6057-8
ER  - 

@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Zachariadis, G. and Valasiadis, O. and Zorba, T. T. and Vujatovic, S. S. and Nikolic, N. and Aleksić, Obrad S. and Ivetic, T. and Cvetković, Olga and Blagojevic, V. and Nikolić, Maria Vesna",
year = "2012",
abstract = "PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm(-1). For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.",
publisher = "Springer, New York",
journal = "Journal of Materials Science",
title = "Far infrared study of local impurity modes of Boron-doped PbTe",
volume = "47",
number = "5",
pages = "2384-2389",
doi = "10.1007/s10853-011-6057-8"
}

Nikolic, P. M., Paraskevopoulos, K. M., Zachariadis, G., Valasiadis, O., Zorba, T. T., Vujatovic, S. S., Nikolic, N., Aleksić, O. S., Ivetic, T., Cvetković, O., Blagojevic, V.,& Nikolić, M. V.. (2012). Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science
Springer, New York., 47(5), 2384-2389.
https://doi.org/10.1007/s10853-011-6057-8

Nikolic PM, Paraskevopoulos KM, Zachariadis G, Valasiadis O, Zorba TT, Vujatovic SS, Nikolic N, Aleksić OS, Ivetic T, Cvetković O, Blagojevic V, Nikolić MV. Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science. 2012;47(5):2384-2389.
doi:10.1007/s10853-011-6057-8 .

Nikolic, P. M., Paraskevopoulos, Konstantinos M., Zachariadis, G., Valasiadis, O., Zorba, T. T., Vujatovic, S. S., Nikolic, N., Aleksić, Obrad S., Ivetic, T., Cvetković, Olga, Blagojevic, V., Nikolić, Maria Vesna, "Far infrared study of local impurity modes of Boron-doped PbTe" in Journal of Materials Science, 47, no. 5 (2012):2384-2389,
https://doi.org/10.1007/s10853-011-6057-8 . .

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, E.
AU  - Zorba, T. T.
AU  - Ivetic, T.
AU  - Vujatovic, S. S.
AU  - Aleksić, Obrad S.
AU  - Nikolic, N.
AU  - Cvetković, Olga
AU  - Blagojevic, V.
AU  - Nikolić, Maria Vesna
PY  - 2011
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/926
AB  - Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
PB  - Elsevier Science Sa, Lausanne
T2  - Materials Chemistry and Physics
T1  - Temperature dependence of In1-xGaxSb reflectivity in the far infrared
VL  - 125
IS  - 1-2
SP  - 72
EP  - 76
DO  - 10.1016/j.matchemphys.2010.08.073
ER  - 

@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Vujatovic, S. S. and Aleksić, Obrad S. and Nikolic, N. and Cvetković, Olga and Blagojevic, V. and Nikolić, Maria Vesna",
year = "2011",
abstract = "Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.",
publisher = "Elsevier Science Sa, Lausanne",
journal = "Materials Chemistry and Physics",
title = "Temperature dependence of In1-xGaxSb reflectivity in the far infrared",
volume = "125",
number = "1-2",
pages = "72-76",
doi = "10.1016/j.matchemphys.2010.08.073"
}

Nikolic, P. M., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Vujatovic, S. S., Aleksić, O. S., Nikolic, N., Cvetković, O., Blagojevic, V.,& Nikolić, M. V.. (2011). Temperature dependence of In1-xGaxSb reflectivity in the far infrared. in Materials Chemistry and Physics
Elsevier Science Sa, Lausanne., 125(1-2), 72-76.
https://doi.org/10.1016/j.matchemphys.2010.08.073

Nikolic PM, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Vujatovic SS, Aleksić OS, Nikolic N, Cvetković O, Blagojevic V, Nikolić MV. Temperature dependence of In1-xGaxSb reflectivity in the far infrared. in Materials Chemistry and Physics. 2011;125(1-2):72-76.
doi:10.1016/j.matchemphys.2010.08.073 .

Nikolic, P. M., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Vujatovic, S. S., Aleksić, Obrad S., Nikolic, N., Cvetković, Olga, Blagojevic, V., Nikolić, Maria Vesna, "Temperature dependence of In1-xGaxSb reflectivity in the far infrared" in Materials Chemistry and Physics, 125, no. 1-2 (2011):72-76,
https://doi.org/10.1016/j.matchemphys.2010.08.073 . .

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Vujatovic, S. S.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, E.
AU  - Zorba, T. T.
AU  - Ivetic, T.
AU  - Cvetković, Olga
AU  - Aleksić, Obrad S.
AU  - Blagojevic, V.
AU  - Nikolić, Vesna
PY  - 2010
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/647
AB  - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
PB  - National Institute of Optoelectronics
T2  - Optoelectronics and Advanced Materials, Rapid Communications
T1  - Far infrared properties of PbTe doped with Hg
VL  - 4
IS  - 2
SP  - 151
EP  - 153
UR  - https://hdl.handle.net/21.15107/rcub_dais_3433
ER  - 

@article{
author = "Nikolic, P. M. and Vujatovic, S. S. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Cvetković, Olga and Aleksić, Obrad S. and Blagojevic, V. and Nikolić, Vesna",
year = "2010",
abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.",
publisher = "National Institute of Optoelectronics",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared properties of PbTe doped with Hg",
volume = "4",
number = "2",
pages = "151-153",
url = "https://hdl.handle.net/21.15107/rcub_dais_3433"
}

Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, O., Aleksić, O. S., Blagojevic, V.,& Nikolić, V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics., 4(2), 151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433

Nikolic PM, Vujatovic SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Cvetković O, Aleksić OS, Blagojevic V, Nikolić V. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433 .

Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, Olga, Aleksić, Obrad S., Blagojevic, V., Nikolić, Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153,
https://hdl.handle.net/21.15107/rcub_dais_3433 .

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Vujatovic, S. S.
AU  - Ivetic, T.
AU  - Nikolić, Maria Vesna
AU  - Cvetković, Olga
AU  - Aleksić, Obrad S.
AU  - Blagojevic, V.
AU  - Branković, Goran
AU  - Nikolic, N.
PY  - 2010
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/636
AB  - A single crystal Bi0.9Sb0.1 ingot was synthesized using the Bridgman technique. Thermal diffusivity and electronic transport properties of single crystal cleaved plates (00l) were determined from PA photoacoustic phase and amplitude spectra obtained using the photoacoustic method with a transmission detection configuration. Both the PA phase and amplitude were measured versus the modulation frequency and numerically analyzed. EDS analyses done to determine chemical composition of the studied samples as well as to check sample homogeneity. Hall effect measurements data were used for the photoacustic measurements.
AB  - Monokristalni ingot Bi0.9Sb0.1 sastava je sisntetisan Brižmanovom tehnikom. Toplotna difuzivnost i elektronske transportne osobine pločice monokrisatala sečene paralelno plosni (00l) određene su iz fotoakustičnih (PA) spektara amplituda i faza primenom metoda fotoakustike za transmisionu detekciju. PA faze i amplitude merene su sa promenom modulacione frekvencije i numerički analizirane. Mikrohemijskom elektronskom analizom EDS metodom određen je hemijski sastav i homogenost uzoraka. Podaci merenja holovog efekta korišćeni su kao polazni parametri za utačnjavanje fotoakustičnih dijagrama.
PB  - International Institute for the Science of Sintering, Beograd
T2  - Science of Sintering
T1  - Thermal diffusivity of single crystal Bi0.9Sb0.1
VL  - 42
IS  - 1
SP  - 45
EP  - 50
DO  - 10.2298/SOS1001045N
ER  - 

@article{
author = "Nikolic, P. M. and Vujatovic, S. S. and Ivetic, T. and Nikolić, Maria Vesna and Cvetković, Olga and Aleksić, Obrad S. and Blagojevic, V. and Branković, Goran and Nikolic, N.",
year = "2010",
abstract = "A single crystal Bi0.9Sb0.1 ingot was synthesized using the Bridgman technique. Thermal diffusivity and electronic transport properties of single crystal cleaved plates (00l) were determined from PA photoacoustic phase and amplitude spectra obtained using the photoacoustic method with a transmission detection configuration. Both the PA phase and amplitude were measured versus the modulation frequency and numerically analyzed. EDS analyses done to determine chemical composition of the studied samples as well as to check sample homogeneity. Hall effect measurements data were used for the photoacustic measurements., Monokristalni ingot Bi0.9Sb0.1 sastava je sisntetisan Brižmanovom tehnikom. Toplotna difuzivnost i elektronske transportne osobine pločice monokrisatala sečene paralelno plosni (00l) određene su iz fotoakustičnih (PA) spektara amplituda i faza primenom metoda fotoakustike za transmisionu detekciju. PA faze i amplitude merene su sa promenom modulacione frekvencije i numerički analizirane. Mikrohemijskom elektronskom analizom EDS metodom određen je hemijski sastav i homogenost uzoraka. Podaci merenja holovog efekta korišćeni su kao polazni parametri za utačnjavanje fotoakustičnih dijagrama.",
publisher = "International Institute for the Science of Sintering, Beograd",
journal = "Science of Sintering",
title = "Thermal diffusivity of single crystal Bi0.9Sb0.1",
volume = "42",
number = "1",
pages = "45-50",
doi = "10.2298/SOS1001045N"
}

Nikolic, P. M., Vujatovic, S. S., Ivetic, T., Nikolić, M. V., Cvetković, O., Aleksić, O. S., Blagojevic, V., Branković, G.,& Nikolic, N.. (2010). Thermal diffusivity of single crystal Bi0.9Sb0.1. in Science of Sintering
International Institute for the Science of Sintering, Beograd., 42(1), 45-50.
https://doi.org/10.2298/SOS1001045N

Nikolic PM, Vujatovic SS, Ivetic T, Nikolić MV, Cvetković O, Aleksić OS, Blagojevic V, Branković G, Nikolic N. Thermal diffusivity of single crystal Bi0.9Sb0.1. in Science of Sintering. 2010;42(1):45-50.
doi:10.2298/SOS1001045N .

Nikolic, P. M., Vujatovic, S. S., Ivetic, T., Nikolić, Maria Vesna, Cvetković, Olga, Aleksić, Obrad S., Blagojevic, V., Branković, Goran, Nikolic, N., "Thermal diffusivity of single crystal Bi0.9Sb0.1" in Science of Sintering, 42, no. 1 (2010):45-50,
https://doi.org/10.2298/SOS1001045N . .

TY  - JOUR
AU  - Vasiljević-Radović, Dana
AU  - Nikolic, PM
AU  - Radulović, Katarina
AU  - Bojicic, AI
AU  - Lukovic, D
AU  - Savić, S.
AU  - Vujatovic, S
AU  - Blagojevic, V
AU  - Lukić, Lazar S.
AU  - Urosevic, D
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/181
AB  - A high purity single crystal Ge with a (1 1 1) orientation was doped with Cr. A thin film of Cr was evaporated and then diffused into Ge substrate. The photoacoustic PA amplitude and phase spectra were measured and numerically analyzed. The substitution of Cr in Ge produces a compensation effect.
PB  - EDP Sciences, Les Ulis Cedex A
T2  - Journal De Physique Iv
T1  - Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr
VL  - 125
SP  - 435
EP  - 438
DO  - 10.1051/jp4:2005125102
ER  - 

@article{
author = "Vasiljević-Radović, Dana and Nikolic, PM and Radulović, Katarina and Bojicic, AI and Lukovic, D and Savić, S. and Vujatovic, S and Blagojevic, V and Lukić, Lazar S. and Urosevic, D",
year = "2005",
abstract = "A high purity single crystal Ge with a (1 1 1) orientation was doped with Cr. A thin film of Cr was evaporated and then diffused into Ge substrate. The photoacoustic PA amplitude and phase spectra were measured and numerically analyzed. The substitution of Cr in Ge produces a compensation effect.",
publisher = "EDP Sciences, Les Ulis Cedex A",
journal = "Journal De Physique Iv",
title = "Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr",
volume = "125",
pages = "435-438",
doi = "10.1051/jp4:2005125102"
}

Vasiljević-Radović, D., Nikolic, P., Radulović, K., Bojicic, A., Lukovic, D., Savić, S., Vujatovic, S., Blagojevic, V., Lukić, L. S.,& Urosevic, D.. (2005). Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr. in Journal De Physique Iv
EDP Sciences, Les Ulis Cedex A., 125, 435-438.
https://doi.org/10.1051/jp4:2005125102

Vasiljević-Radović D, Nikolic P, Radulović K, Bojicic A, Lukovic D, Savić S, Vujatovic S, Blagojevic V, Lukić LS, Urosevic D. Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr. in Journal De Physique Iv. 2005;125:435-438.
doi:10.1051/jp4:2005125102 .

Vasiljević-Radović, Dana, Nikolic, PM, Radulović, Katarina, Bojicic, AI, Lukovic, D, Savić, S., Vujatovic, S, Blagojevic, V, Lukić, Lazar S., Urosevic, D, "Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr" in Journal De Physique Iv, 125 (2005):435-438,
https://doi.org/10.1051/jp4:2005125102 . .