Schmid, U.

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  • Schmid, U. (1)
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Author's Bibliography

Field effect transistor based on protons as charge carriers

Matovic, J.; Adamovic, N.; Jakšić, Zoran; Schmid, U.

(Elsevier, 2010)

TY  - CONF
AU  - Matovic, J.
AU  - Adamovic, N.
AU  - Jakšić, Zoran
AU  - Schmid, U.
PY  - 2010
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3178
AB  - We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate.
PB  - Elsevier
C3  - Procedia Engineering
T1  - Field effect transistor based on protons as charge carriers
VL  - 5
SP  - 1368
EP  - 1371
DO  - 10.1016/j.proeng.2010.09.369
ER  - 
@conference{
author = "Matovic, J. and Adamovic, N. and Jakšić, Zoran and Schmid, U.",
year = "2010",
abstract = "We demonstrated a field effect transistor based on the modulation of the proton flow in confined water-containing nanochannels. The device resembles an MOSFET transistor with the difference that the charge carriers here are ions (i.e. protons) instead of electrons. The effective cross-section of the conductive channels in the transistor is defined by the intensity of the electrical double layer and by the potential applied to the transistor gate.",
publisher = "Elsevier",
journal = "Procedia Engineering",
title = "Field effect transistor based on protons as charge carriers",
volume = "5",
pages = "1368-1371",
doi = "10.1016/j.proeng.2010.09.369"
}
Matovic, J., Adamovic, N., Jakšić, Z.,& Schmid, U.. (2010). Field effect transistor based on protons as charge carriers. in Procedia Engineering
Elsevier., 5, 1368-1371.
https://doi.org/10.1016/j.proeng.2010.09.369
Matovic J, Adamovic N, Jakšić Z, Schmid U. Field effect transistor based on protons as charge carriers. in Procedia Engineering. 2010;5:1368-1371.
doi:10.1016/j.proeng.2010.09.369 .
Matovic, J., Adamovic, N., Jakšić, Zoran, Schmid, U., "Field effect transistor based on protons as charge carriers" in Procedia Engineering, 5 (2010):1368-1371,
https://doi.org/10.1016/j.proeng.2010.09.369 . .