TY  - CONF
AU  - Todorović, D. M.
AU  - Smiljanić, Miloljub
AU  - Jović, Vesna
AU  - Sarajlić, Milija
AU  - Grozdić, T.
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/481
AB  - The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
C3  - European Physical Journal: Special Topics
T1  - Investigation of interface and surface energy states in semiconductors by PA method
VL  - 153
IS  - 1
SP  - 247
EP  - 250
DO  - 10.1140/epjst/e2008-00437-1
ER  - 

@conference{
author = "Todorović, D. M. and Smiljanić, Miloljub and Jović, Vesna and Sarajlić, Milija and Grozdić, T.",
year = "2008",
abstract = "The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.",
journal = "European Physical Journal: Special Topics",
title = "Investigation of interface and surface energy states in semiconductors by PA method",
volume = "153",
number = "1",
pages = "247-250",
doi = "10.1140/epjst/e2008-00437-1"
}

Todorović, D. M., Smiljanić, M., Jović, V., Sarajlić, M.,& Grozdić, T.. (2008). Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics, 153(1), 247-250.
https://doi.org/10.1140/epjst/e2008-00437-1

Todorović DM, Smiljanić M, Jović V, Sarajlić M, Grozdić T. Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics. 2008;153(1):247-250.
doi:10.1140/epjst/e2008-00437-1 .

Todorović, D. M., Smiljanić, Miloljub, Jović, Vesna, Sarajlić, Milija, Grozdić, T., "Investigation of interface and surface energy states in semiconductors by PA method" in European Physical Journal: Special Topics, 153, no. 1 (2008):247-250,
https://doi.org/10.1140/epjst/e2008-00437-1 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
AU  - Grozdić, T.
PY  - 2006
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/285
AB  - The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.
C3  - 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
T1  - Investigation of the ion defect states by photoacoustic spectroscopy
SP  - 611
EP  - 614
DO  - 10.1109/ICMEL.2006.1651031
ER  - 

@conference{
author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub and Grozdić, T.",
year = "2006",
abstract = "The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.",
journal = "25th International Conference on Microelectronics, MIEL 2006 - Proceedings",
title = "Investigation of the ion defect states by photoacoustic spectroscopy",
pages = "611-614",
doi = "10.1109/ICMEL.2006.1651031"
}

Todorović, D. M., Jović, V., Smiljanić, M.,& Grozdić, T.. (2006). Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 611-614.
https://doi.org/10.1109/ICMEL.2006.1651031

Todorović DM, Jović V, Smiljanić M, Grozdić T. Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:611-614.
doi:10.1109/ICMEL.2006.1651031 .

Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, Grozdić, T., "Investigation of the ion defect states by photoacoustic spectroscopy" in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):611-614,
https://doi.org/10.1109/ICMEL.2006.1651031 . .