TY  - JOUR
AU  - Smiljanić, Milče M.
AU  - Radjenović, Branislav
AU  - Lazić, Žarko
AU  - Radmilović Radjenović, Marija
AU  - Rašljić Rafajilović, Milena
AU  - Cvetanović Zobenica, Katarina
AU  - Milinković, Evgenija
AU  - Filipović, Ana
PY  - 2021
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4453
AB  - In  this  paper,  fabrication  of  silicon  microchannels  with  integrated  obstacles  by  using  25 wt.% tetramethylammonium  hydroxide  (TMAH)  aqueous  solution  at  the  temperature  of  80 C  is presented  and  analysed.  We  studied  basic  island  patterns,  which present  union  of  two symmetrical parallelograms with the sides along predetermined crystallographic directions <n10> (2<n<8) and <100>. Acute angles of the parallelograms were smaller than 45o. We have derived analytical  relations  for  determining  dimensions  of  the  integrated  obstacles.  The  developed etching  technique  provides  reduction  of  the  distance  between  the  obstacles.  Before  the experiments, we performed simulations of pattern etching based on the level set method and presented  evolution  of  the  etched basic  patterns  for  the  predetermined  crystallographic directions  <n10>.  Combination  of  basic  patterns  with  sides  along  the  <610>  and  <100> crystallographic  directions  is  used  to  fabricate  a  matrix  of  two  row  of  silicon  obstacles  in  a microchannel.   We   obtained   a   good   agreement   between   the   experimental   results   and simulations.   Our   results   enable   simple  and   cost-effective  fabrication   of  various   complex microfluidic silicon platforms with integrated obstacles.
AB  - U ovom radu je prezentovana i analizirana izrada silicijumskih mikrokanala sa integrisanim preprekama u vodenom rastvoru 25 mas.% tetrametilamonijum hidroksida (TMAH) na temperaturi od 80 oC. Proučavani su osnovni oblici maski koji predstavljaju uniju dva simetrična ostrva u obliku paralelograma čije su stranice duž unapred određenih kristalografskih pravaca (2<n<8) i <100>. Oštri uglovi paralelograma su manji od 45˚. Izvedene su formule za izračunavanje dimenzija integrisanih prepreka. Razvijena je tehnika nagrizanja koja smanjuje rastojanje između prepreka. Pre eksperimenata izvršene su simulacije osnovnih oblika koje se baziraju na metodi implicitno definisanih nivoa (engl. level set method). Prezentovan je razvoj nagrizanih osnovnih oblika maski za unapred određene kristalografske pravce <n10>. Kombinacija osnovnih oblika maski čije su stranice duž kristalografskih pravaca <610> i <100> je iskorišćena za izradu dva reda matrice silicijumskih prepreka u mikrokanalu. Dobijeno je dobro slaganje između eksperimenata i simulacija. Dobijeni rezultati omogućavaju jednostavnu i jeftinu izradu različitih kompleksnih mikrofluidnih silicijumskih platformi sa integrisanim preprekama.
PB  - Association of Chemical Engeneers of Serbia
T2  - Hemijska industrija
T1  - Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH
T1  - Kontrolisan raspored integrisanih prepreka u silicijumskim mikrokanalima nagrizanim u 25 mas.% rastvoru tetrametilamonijum hidroksida
VL  - 75
IS  - 1
SP  - 15
EP  - 24
DO  - 10.2298/HEMIND200807005S
ER  - 

@article{
author = "Smiljanić, Milče M. and Radjenović, Branislav and Lazić, Žarko and Radmilović Radjenović, Marija and Rašljić Rafajilović, Milena and Cvetanović Zobenica, Katarina and Milinković, Evgenija and Filipović, Ana",
year = "2021",
abstract = "In  this  paper,  fabrication  of  silicon  microchannels  with  integrated  obstacles  by  using  25 wt.% tetramethylammonium  hydroxide  (TMAH)  aqueous  solution  at  the  temperature  of  80 C  is presented  and  analysed.  We  studied  basic  island  patterns,  which present  union  of  two symmetrical parallelograms with the sides along predetermined crystallographic directions <n10> (2<n<8) and <100>. Acute angles of the parallelograms were smaller than 45o. We have derived analytical  relations  for  determining  dimensions  of  the  integrated  obstacles.  The  developed etching  technique  provides  reduction  of  the  distance  between  the  obstacles.  Before  the experiments, we performed simulations of pattern etching based on the level set method and presented  evolution  of  the  etched basic  patterns  for  the  predetermined  crystallographic directions  <n10>.  Combination  of  basic  patterns  with  sides  along  the  <610>  and  <100> crystallographic  directions  is  used  to  fabricate  a  matrix  of  two  row  of  silicon  obstacles  in  a microchannel.   We   obtained   a   good   agreement   between   the   experimental   results   and simulations.   Our   results   enable   simple  and   cost-effective  fabrication   of  various   complex microfluidic silicon platforms with integrated obstacles., U ovom radu je prezentovana i analizirana izrada silicijumskih mikrokanala sa integrisanim preprekama u vodenom rastvoru 25 mas.% tetrametilamonijum hidroksida (TMAH) na temperaturi od 80 oC. Proučavani su osnovni oblici maski koji predstavljaju uniju dva simetrična ostrva u obliku paralelograma čije su stranice duž unapred određenih kristalografskih pravaca (2<n<8) i <100>. Oštri uglovi paralelograma su manji od 45˚. Izvedene su formule za izračunavanje dimenzija integrisanih prepreka. Razvijena je tehnika nagrizanja koja smanjuje rastojanje između prepreka. Pre eksperimenata izvršene su simulacije osnovnih oblika koje se baziraju na metodi implicitno definisanih nivoa (engl. level set method). Prezentovan je razvoj nagrizanih osnovnih oblika maski za unapred određene kristalografske pravce <n10>. Kombinacija osnovnih oblika maski čije su stranice duž kristalografskih pravaca <610> i <100> je iskorišćena za izradu dva reda matrice silicijumskih prepreka u mikrokanalu. Dobijeno je dobro slaganje između eksperimenata i simulacija. Dobijeni rezultati omogućavaju jednostavnu i jeftinu izradu različitih kompleksnih mikrofluidnih silicijumskih platformi sa integrisanim preprekama.",
publisher = "Association of Chemical Engeneers of Serbia",
journal = "Hemijska industrija",
title = "Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH, Kontrolisan raspored integrisanih prepreka u silicijumskim mikrokanalima nagrizanim u 25 mas.% rastvoru tetrametilamonijum hidroksida",
volume = "75",
number = "1",
pages = "15-24",
doi = "10.2298/HEMIND200807005S"
}

Smiljanić, M. M., Radjenović, B., Lazić, Ž., Radmilović Radjenović, M., Rašljić Rafajilović, M., Cvetanović Zobenica, K., Milinković, E.,& Filipović, A.. (2021). Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH. in Hemijska industrija
Association of Chemical Engeneers of Serbia., 75(1), 15-24.
https://doi.org/10.2298/HEMIND200807005S

Smiljanić MM, Radjenović B, Lazić Ž, Radmilović Radjenović M, Rašljić Rafajilović M, Cvetanović Zobenica K, Milinković E, Filipović A. Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH. in Hemijska industrija. 2021;75(1):15-24.
doi:10.2298/HEMIND200807005S .

Smiljanić, Milče M., Radjenović, Branislav, Lazić, Žarko, Radmilović Radjenović, Marija, Rašljić Rafajilović, Milena, Cvetanović Zobenica, Katarina, Milinković, Evgenija, Filipović, Ana, "Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt % TMAH" in Hemijska industrija, 75, no. 1 (2021):15-24,
https://doi.org/10.2298/HEMIND200807005S . .

TY  - GEN
AU  - Rađenović, Branislav
AU  - Smiljanić, Milče M.
AU  - Radmilović Rađenović, Marija
PY  - 2020
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3977
AB  - U zapreminskom mikromašinstvu procesom vlažnog hemijskog nagrizanja odstranjuje se
nepotrebni silicijum u otvoru maskirajućeg materijala i formiraju se kompleksni trodimenzionalni oblici. Dobijeni trodimenzionalni oblici predstavljaju neku vrstu projekcije dvodimenzionalnog, planarnog lika sa maske u treću dimenziju, koja je ovom slučaju debljina silicijumske pločice i prostiru se do dubine nagrizanja. Za vreme anizotropnog vlažnog hemijskog nagrizanja silicijuma u vodenom rastvoru TMAH koncentracije 25 tež. % TMAH na temperaturi od 80 °C različite kristalografske ravni se nagrizaju različitim brzinama. Zbog različitih brzina nagrizanja neke ravni će se pojavljivati tokom nagrizanja dok će druge nestajati. Tokom nagrizanja javlja se problem podgrizanja konveksnih uglova i pojave
određenih kristalografski ravni koje deformišu trodimenzionalne silicijumske strukture. Problem podgrizanja se može rešiti direktnim uračunavanjem ove pojave u projektovanju i kompenzacijom dodavanjem viška materijala na mestima koja se brže nagrizaju (strukture za kompenzaciju). Projektovanje željenog oblika u zapreminskom mikromašinstvu je najčešće veoma komplikovano i zahteva puno eksperimentalnog rada da bi se predvidelo kako se ponaša odgovarajuće sredstvo za nagrizanje. Eskperimentalni rad zahteva potrošnju silicijumskih pločica i sredstva za nagrizanje, kao i primenu procesa termičke oksidacije i hemijskih pranja u pripremi za eksperiment. Razvoj softvera za simulaciju nagrizanja silicijuma u anizotropnom vodenom rastvori smanjuje troškove razvoja i proizvodnje u IHTM-CMT jer se pre izrade silicijumske strukture mogu simulirati različite maske i izabrati onaj dizajn koji je najbolji.
T1  - Softver za simulaciju nagrizanja silicijuma LSPro
UR  - https://hdl.handle.net/21.15107/rcub_cer_3977
ER  - 

@misc{
author = "Rađenović, Branislav and Smiljanić, Milče M. and Radmilović Rađenović, Marija",
year = "2020",
abstract = "U zapreminskom mikromašinstvu procesom vlažnog hemijskog nagrizanja odstranjuje se
nepotrebni silicijum u otvoru maskirajućeg materijala i formiraju se kompleksni trodimenzionalni oblici. Dobijeni trodimenzionalni oblici predstavljaju neku vrstu projekcije dvodimenzionalnog, planarnog lika sa maske u treću dimenziju, koja je ovom slučaju debljina silicijumske pločice i prostiru se do dubine nagrizanja. Za vreme anizotropnog vlažnog hemijskog nagrizanja silicijuma u vodenom rastvoru TMAH koncentracije 25 tež. % TMAH na temperaturi od 80 °C različite kristalografske ravni se nagrizaju različitim brzinama. Zbog različitih brzina nagrizanja neke ravni će se pojavljivati tokom nagrizanja dok će druge nestajati. Tokom nagrizanja javlja se problem podgrizanja konveksnih uglova i pojave
određenih kristalografski ravni koje deformišu trodimenzionalne silicijumske strukture. Problem podgrizanja se može rešiti direktnim uračunavanjem ove pojave u projektovanju i kompenzacijom dodavanjem viška materijala na mestima koja se brže nagrizaju (strukture za kompenzaciju). Projektovanje željenog oblika u zapreminskom mikromašinstvu je najčešće veoma komplikovano i zahteva puno eksperimentalnog rada da bi se predvidelo kako se ponaša odgovarajuće sredstvo za nagrizanje. Eskperimentalni rad zahteva potrošnju silicijumskih pločica i sredstva za nagrizanje, kao i primenu procesa termičke oksidacije i hemijskih pranja u pripremi za eksperiment. Razvoj softvera za simulaciju nagrizanja silicijuma u anizotropnom vodenom rastvori smanjuje troškove razvoja i proizvodnje u IHTM-CMT jer se pre izrade silicijumske strukture mogu simulirati različite maske i izabrati onaj dizajn koji je najbolji.",
title = "Softver za simulaciju nagrizanja silicijuma LSPro",
url = "https://hdl.handle.net/21.15107/rcub_cer_3977"
}

Rađenović, B., Smiljanić, M. M.,& Radmilović Rađenović, M.. (2020). Softver za simulaciju nagrizanja silicijuma LSPro. .
https://hdl.handle.net/21.15107/rcub_cer_3977

Rađenović B, Smiljanić MM, Radmilović Rađenović M. Softver za simulaciju nagrizanja silicijuma LSPro. 2020;.
https://hdl.handle.net/21.15107/rcub_cer_3977 .

Rađenović, Branislav, Smiljanić, Milče M., Radmilović Rađenović, Marija, "Softver za simulaciju nagrizanja silicijuma LSPro" (2020),
https://hdl.handle.net/21.15107/rcub_cer_3977 .

TY  - JOUR
AU  - Smiljanić, Milče M.
AU  - Lazić, Žarko
AU  - Jović, Vesna
AU  - Radjenović, Branislav
AU  - Radmilović-Radjenović, Marija
PY  - 2020
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3490
AB  - This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.
PB  - MDPI
T2  - Micromachines
T1  - Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
VL  - 11
IS  - 3
SP  - 253
DO  - 10.3390/mi11030253
ER  - 

@article{
author = "Smiljanić, Milče M. and Lazić, Žarko and Jović, Vesna and Radjenović, Branislav and Radmilović-Radjenović, Marija",
year = "2020",
abstract = "This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.",
publisher = "MDPI",
journal = "Micromachines",
title = "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C",
volume = "11",
number = "3",
pages = "253",
doi = "10.3390/mi11030253"
}

Smiljanić, M. M., Lazić, Ž., Jović, V., Radjenović, B.,& Radmilović-Radjenović, M.. (2020). Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines
MDPI., 11(3), 253.
https://doi.org/10.3390/mi11030253

Smiljanić MM, Lazić Ž, Jović V, Radjenović B, Radmilović-Radjenović M. Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C. in Micromachines. 2020;11(3):253.
doi:10.3390/mi11030253 .

Smiljanić, Milče M., Lazić, Žarko, Jović, Vesna, Radjenović, Branislav, Radmilović-Radjenović, Marija, "Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C" in Micromachines, 11, no. 3 (2020):253,
https://doi.org/10.3390/mi11030253 . .

TY  - JOUR
AU  - Radjenovic, Branislav
AU  - Mitić, Vojislav V.
AU  - Ribar, Srđan
AU  - Lu, Chun-An
AU  - Radović, Ivana
AU  - Stajčić, Aleksandar
AU  - Novaković, Igor
AU  - Vlahović, Branislav
PY  - 2020
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4005
AB  - This research is focused on further developing of application and use of graph theory in order to describe relations between grains and to establish control over layers. We used functionalized BaTiO3 nanoparticles coated with Yttrium-based salt. The capacitance change results on super-microstructure levels are the part of the measured values on the bulk samples. The new idea is graph theory application for determination of electronic parameters distribution at the grain boundary and to compare them with the bulk measured values. We present them with vertices in graph, corresponding with grains, connected with edges. Capacitance change with applied voltage was measured on samples sintered in air and nitrogen, up to 100 V. Using graph theory, it has been shown that capacitance change can be successfully calculated on the layers between grains. Within the idea how to get parameters values at microlevel between the grains and pores, mathematical tool can be developed. Besides previously described 1D case, some original calculations for 2D cases were performed in this study, proving successful graph theory use for the calculation of values at nanolevel, leading to a further minituarization in micropackaging.
PB  - World Scientific
T2  - Modern Physics Letters B
T1  - Ceramics, materials, microelectronics and graph theory new frontiers
SP  - 2150159
DO  - 10.1142/S0217984921501591
ER  - 

@article{
author = "Radjenovic, Branislav and Mitić, Vojislav V. and Ribar, Srđan and Lu, Chun-An and Radović, Ivana and Stajčić, Aleksandar and Novaković, Igor and Vlahović, Branislav",
year = "2020",
abstract = "This research is focused on further developing of application and use of graph theory in order to describe relations between grains and to establish control over layers. We used functionalized BaTiO3 nanoparticles coated with Yttrium-based salt. The capacitance change results on super-microstructure levels are the part of the measured values on the bulk samples. The new idea is graph theory application for determination of electronic parameters distribution at the grain boundary and to compare them with the bulk measured values. We present them with vertices in graph, corresponding with grains, connected with edges. Capacitance change with applied voltage was measured on samples sintered in air and nitrogen, up to 100 V. Using graph theory, it has been shown that capacitance change can be successfully calculated on the layers between grains. Within the idea how to get parameters values at microlevel between the grains and pores, mathematical tool can be developed. Besides previously described 1D case, some original calculations for 2D cases were performed in this study, proving successful graph theory use for the calculation of values at nanolevel, leading to a further minituarization in micropackaging.",
publisher = "World Scientific",
journal = "Modern Physics Letters B",
title = "Ceramics, materials, microelectronics and graph theory new frontiers",
pages = "2150159",
doi = "10.1142/S0217984921501591"
}

Radjenovic, B., Mitić, V. V., Ribar, S., Lu, C., Radović, I., Stajčić, A., Novaković, I.,& Vlahović, B.. (2020). Ceramics, materials, microelectronics and graph theory new frontiers. in Modern Physics Letters B
World Scientific., 2150159.
https://doi.org/10.1142/S0217984921501591

Radjenovic B, Mitić VV, Ribar S, Lu C, Radović I, Stajčić A, Novaković I, Vlahović B. Ceramics, materials, microelectronics and graph theory new frontiers. in Modern Physics Letters B. 2020;:2150159.
doi:10.1142/S0217984921501591 .

Radjenovic, Branislav, Mitić, Vojislav V., Ribar, Srđan, Lu, Chun-An, Radović, Ivana, Stajčić, Aleksandar, Novaković, Igor, Vlahović, Branislav, "Ceramics, materials, microelectronics and graph theory new frontiers" in Modern Physics Letters B (2020):2150159,
https://doi.org/10.1142/S0217984921501591 . .

TY  - JOUR
AU  - Smiljanić, Milče
AU  - Lazić, Žarko
AU  - Rađenović, Branislav
AU  - Radmilović-Radjenović, Marija
AU  - Jović, Vesna
PY  - 2019
UR  - http://www.mdpi.com/2072-666X/10/2/102
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/2640
AB  - Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.
PB  - MDPI
T2  - Micromachines
T2  - Micromachines
T1  - Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH
VL  - 10
IS  - 2
SP  - 102
DO  - 10.3390/mi10020102
ER  - 

@article{
author = "Smiljanić, Milče and Lazić, Žarko and Rađenović, Branislav and Radmilović-Radjenović, Marija and Jović, Vesna",
year = "2019",
abstract = "Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.",
publisher = "MDPI",
journal = "Micromachines, Micromachines",
title = "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH",
volume = "10",
number = "2",
pages = "102",
doi = "10.3390/mi10020102"
}

Smiljanić, M., Lazić, Ž., Rađenović, B., Radmilović-Radjenović, M.,& Jović, V.. (2019). Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines
MDPI., 10(2), 102.
https://doi.org/10.3390/mi10020102

Smiljanić M, Lazić Ž, Rađenović B, Radmilović-Radjenović M, Jović V. Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. in Micromachines. 2019;10(2):102.
doi:10.3390/mi10020102 .

Smiljanić, Milče, Lazić, Žarko, Rađenović, Branislav, Radmilović-Radjenović, Marija, Jović, Vesna, "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH" in Micromachines, 10, no. 2 (2019):102,
https://doi.org/10.3390/mi10020102 . .

TY  - JOUR
AU  - Smiljanić, Milče
AU  - Radjenovic, Branislav
AU  - Radmilović-Radjenović, Marija
AU  - Lazić, Žarko
AU  - Jović, Vesna
PY  - 2014
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/1426
AB  - Maskless etching with convex corner compensation in the form of a  LT  100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.
PB  - Iop Publishing Ltd, Bristol
T2  - Journal of Micromechanics and Microengineering
T1  - Simulation and experimental study of maskless convex corner compensation in TMAH water solution
VL  - 24
IS  - 11
DO  - 10.1088/0960-1317/24/11/115003
ER  - 

@article{
author = "Smiljanić, Milče and Radjenovic, Branislav and Radmilović-Radjenović, Marija and Lazić, Žarko and Jović, Vesna",
year = "2014",
abstract = "Maskless etching with convex corner compensation in the form of a  LT  100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.",
publisher = "Iop Publishing Ltd, Bristol",
journal = "Journal of Micromechanics and Microengineering",
title = "Simulation and experimental study of maskless convex corner compensation in TMAH water solution",
volume = "24",
number = "11",
doi = "10.1088/0960-1317/24/11/115003"
}

Smiljanić, M., Radjenovic, B., Radmilović-Radjenović, M., Lazić, Ž.,& Jović, V.. (2014). Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering
Iop Publishing Ltd, Bristol., 24(11).
https://doi.org/10.1088/0960-1317/24/11/115003

Smiljanić M, Radjenovic B, Radmilović-Radjenović M, Lazić Ž, Jović V. Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering. 2014;24(11).
doi:10.1088/0960-1317/24/11/115003 .

Smiljanić, Milče, Radjenovic, Branislav, Radmilović-Radjenović, Marija, Lazić, Žarko, Jović, Vesna, "Simulation and experimental study of maskless convex corner compensation in TMAH water solution" in Journal of Micromechanics and Microengineering, 24, no. 11 (2014),
https://doi.org/10.1088/0960-1317/24/11/115003 . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Smiljanić, Miloljub
AU  - Radjenović, Branislav
PY  - 1984
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3078
AB  - A method for calculation the impulse response of a depletion layer of a semiconductor device based on Ramo's theorem is described. Using this method the impulse response of a reach-through avalanche photodiode is derived.
PB  - Elsevier
T2  - Solid-State Electronics
T1  - The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode
VL  - 27
IS  - 10
SP  - 833
EP  - 835
DO  - 10.1016/0038-1101(84)90002-9
ER  - 

@article{
author = "Đurić, Zoran G. and Smiljanić, Miloljub and Radjenović, Branislav",
year = "1984",
abstract = "A method for calculation the impulse response of a depletion layer of a semiconductor device based on Ramo's theorem is described. Using this method the impulse response of a reach-through avalanche photodiode is derived.",
publisher = "Elsevier",
journal = "Solid-State Electronics",
title = "The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode",
volume = "27",
number = "10",
pages = "833-835",
doi = "10.1016/0038-1101(84)90002-9"
}

Đurić, Z. G., Smiljanić, M.,& Radjenović, B.. (1984). The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode. in Solid-State Electronics
Elsevier., 27(10), 833-835.
https://doi.org/10.1016/0038-1101(84)90002-9

Đurić ZG, Smiljanić M, Radjenović B. The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode. in Solid-State Electronics. 1984;27(10):833-835.
doi:10.1016/0038-1101(84)90002-9 .

Đurić, Zoran G., Smiljanić, Miloljub, Radjenović, Branislav, "The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode" in Solid-State Electronics, 27, no. 10 (1984):833-835,
https://doi.org/10.1016/0038-1101(84)90002-9 . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Rađenović, Branislav
PY  - 1983
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4416
AB  - Exact analytical expressions are derived for the short circuit photodiode currents excited by light pulses, under the assumption that the drift carrier velocity linearly depends on the electric field in the depletion layer. Reflection from the back surface of the photodiode is taken into account. Using the obtained expressions it is possible to establish a connection between the rise time t,~e and the product aWeff of the absorption coefficient a(A) and effective depletion layer width Wen(W) at various ratios of the diode thickness and the effective depletion layer width. The influence of the RC-constant (where C is the photodiode effective capacity and R is the sum of the diode series and loading resistances) on the rise time is also analyzed. One of the most important conclusions is that generally the rise time is larger for p-n-n + photodiode configurations than for n-p-p + configurations at the same substrate resistivity.
PB  - Elsevier
T2  - Solid State Electronics
T1  - Rise time of silicon p-i-n photodiodes
VL  - 26
IS  - 12
SP  - 1143
EP  - 1149
DO  - 10.1016/0038-1101(83)90141-7
ER  - 

@article{
author = "Đurić, Zoran G. and Rađenović, Branislav",
year = "1983",
abstract = "Exact analytical expressions are derived for the short circuit photodiode currents excited by light pulses, under the assumption that the drift carrier velocity linearly depends on the electric field in the depletion layer. Reflection from the back surface of the photodiode is taken into account. Using the obtained expressions it is possible to establish a connection between the rise time t,~e and the product aWeff of the absorption coefficient a(A) and effective depletion layer width Wen(W) at various ratios of the diode thickness and the effective depletion layer width. The influence of the RC-constant (where C is the photodiode effective capacity and R is the sum of the diode series and loading resistances) on the rise time is also analyzed. One of the most important conclusions is that generally the rise time is larger for p-n-n + photodiode configurations than for n-p-p + configurations at the same substrate resistivity.",
publisher = "Elsevier",
journal = "Solid State Electronics",
title = "Rise time of silicon p-i-n photodiodes",
volume = "26",
number = "12",
pages = "1143-1149",
doi = "10.1016/0038-1101(83)90141-7"
}

Đurić, Z. G.,& Rađenović, B.. (1983). Rise time of silicon p-i-n photodiodes. in Solid State Electronics
Elsevier., 26(12), 1143-1149.
https://doi.org/10.1016/0038-1101(83)90141-7

Đurić ZG, Rađenović B. Rise time of silicon p-i-n photodiodes. in Solid State Electronics. 1983;26(12):1143-1149.
doi:10.1016/0038-1101(83)90141-7 .

Đurić, Zoran G., Rađenović, Branislav, "Rise time of silicon p-i-n photodiodes" in Solid State Electronics, 26, no. 12 (1983):1143-1149,
https://doi.org/10.1016/0038-1101(83)90141-7 . .