TY  - JOUR
AU  - Nikolic, P. M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, E.
AU  - Zorba, T. T.
AU  - Ivetic, T.
AU  - Vujatovic, S. S.
AU  - Aleksić, Obrad S.
AU  - Nikolic, N.
AU  - Cvetković, Olga
AU  - Blagojevic, V.
AU  - Nikolić, Maria Vesna
PY  - 2011
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/926
AB  - Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
PB  - Elsevier Science Sa, Lausanne
T2  - Materials Chemistry and Physics
T1  - Temperature dependence of In1-xGaxSb reflectivity in the far infrared
VL  - 125
IS  - 1-2
SP  - 72
EP  - 76
DO  - 10.1016/j.matchemphys.2010.08.073
ER  - 

@article{
author = "Nikolic, P. M. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Vujatovic, S. S. and Aleksić, Obrad S. and Nikolic, N. and Cvetković, Olga and Blagojevic, V. and Nikolić, Maria Vesna",
year = "2011",
abstract = "Far infrared reflectivity spectra of polycrystalline In1-xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.",
publisher = "Elsevier Science Sa, Lausanne",
journal = "Materials Chemistry and Physics",
title = "Temperature dependence of In1-xGaxSb reflectivity in the far infrared",
volume = "125",
number = "1-2",
pages = "72-76",
doi = "10.1016/j.matchemphys.2010.08.073"
}

Nikolic, P. M., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Vujatovic, S. S., Aleksić, O. S., Nikolic, N., Cvetković, O., Blagojevic, V.,& Nikolić, M. V.. (2011). Temperature dependence of In1-xGaxSb reflectivity in the far infrared. in Materials Chemistry and Physics
Elsevier Science Sa, Lausanne., 125(1-2), 72-76.
https://doi.org/10.1016/j.matchemphys.2010.08.073

Nikolic PM, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Vujatovic SS, Aleksić OS, Nikolic N, Cvetković O, Blagojevic V, Nikolić MV. Temperature dependence of In1-xGaxSb reflectivity in the far infrared. in Materials Chemistry and Physics. 2011;125(1-2):72-76.
doi:10.1016/j.matchemphys.2010.08.073 .

Nikolic, P. M., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Vujatovic, S. S., Aleksić, Obrad S., Nikolic, N., Cvetković, Olga, Blagojevic, V., Nikolić, Maria Vesna, "Temperature dependence of In1-xGaxSb reflectivity in the far infrared" in Materials Chemistry and Physics, 125, no. 1-2 (2011):72-76,
https://doi.org/10.1016/j.matchemphys.2010.08.073 . .

TY  - JOUR
AU  - Nikolic, P. M.
AU  - Vujatovic, S. S.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, E.
AU  - Zorba, T. T.
AU  - Ivetic, T.
AU  - Cvetković, Olga
AU  - Aleksić, Obrad S.
AU  - Blagojevic, V.
AU  - Nikolić, Vesna
PY  - 2010
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/647
AB  - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
PB  - National Institute of Optoelectronics
T2  - Optoelectronics and Advanced Materials, Rapid Communications
T1  - Far infrared properties of PbTe doped with Hg
VL  - 4
IS  - 2
SP  - 151
EP  - 153
UR  - https://hdl.handle.net/21.15107/rcub_dais_3433
ER  - 

@article{
author = "Nikolic, P. M. and Vujatovic, S. S. and Paraskevopoulos, Konstantinos M. and Pavlidou, E. and Zorba, T. T. and Ivetic, T. and Cvetković, Olga and Aleksić, Obrad S. and Blagojevic, V. and Nikolić, Vesna",
year = "2010",
abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.",
publisher = "National Institute of Optoelectronics",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared properties of PbTe doped with Hg",
volume = "4",
number = "2",
pages = "151-153",
url = "https://hdl.handle.net/21.15107/rcub_dais_3433"
}

Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, O., Aleksić, O. S., Blagojevic, V.,& Nikolić, V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications
National Institute of Optoelectronics., 4(2), 151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433

Nikolic PM, Vujatovic SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetic T, Cvetković O, Aleksić OS, Blagojevic V, Nikolić V. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433 .

Nikolic, P. M., Vujatovic, S. S., Paraskevopoulos, Konstantinos M., Pavlidou, E., Zorba, T. T., Ivetic, T., Cvetković, Olga, Aleksić, Obrad S., Blagojevic, V., Nikolić, Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153,
https://hdl.handle.net/21.15107/rcub_dais_3433 .