TY  - JOUR
AU  - Marjanović, Vesna
AU  - Lazarević, Slavica
AU  - Janković-Častvan, Ivona
AU  - Potkonjak, Branislav
AU  - Janaćković, Đorđe
AU  - Petrović, Radomir
PY  - 2011
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/4085
AB  - Natural and acid-activated sepiolite samples were functionalized with (3-Mercaptopropyl)trimethoxysilane.
By X-ray powder diffraction, Fourier transform infrared spectroscopy, and differential thermal
analysis it was shown that functionalization of sepiolites by grafting silane reagents occurs mainly on
the surface, whereby their crystalline structure remained unchanged. The efficiency of the adsorbents
in Cr(VI) removal from aqueous solutions follows the order: functionalized acid-activated sepiolite
> functionalized natural sepiolite > acid-activated sepiolite > natural sepiolite. As the number of silanol
groups on the sepiolite surface increased during the acid activation, the silane functionalization increased
and this led to an increase in Cr(VI) adsorption. The adsorption capacity strongly depended on the pH
of the solution from which the adsorption occurred. Maximum Cr(VI) removal was ca. 8.0mg Cr(VI) per
g of functionalized acid-activated sepiolite at initial pH 3, when the pH of solution reached 4.7, and
ca. 2.7mg Cr(VI) per g of functionalized natural sepiolite at initial pH 2, when the pH of the solution
reached 2.5. Cr(VI) removal by the functionalized sepiolites was mainly attributed to electrostatic attraction
between the protonated mercapto groups and the negatively charged Cr(VI) species. The sorption
isotherms showed that Cr(VI) removal by both functionalized sepiolites for all initial investigated solution
pH values is well described using the Dubinin–Radushkevich model. The thermodynamic data suggest
spontaneity of the major physical adsorption process at 298 K.
PB  - Elsevier
T2  - Chemical Engineering Journal
T1  - Chromium (VI) removal from aqueous solutions using mercaptosilane functionalized sepiolites
VL  - 166
IS  - 1
SP  - 198
EP  - 206
DO  - 10.1016/j.cej.2010.10.062
ER  - 

@article{
author = "Marjanović, Vesna and Lazarević, Slavica and Janković-Častvan, Ivona and Potkonjak, Branislav and Janaćković, Đorđe and Petrović, Radomir",
year = "2011",
abstract = "Natural and acid-activated sepiolite samples were functionalized with (3-Mercaptopropyl)trimethoxysilane.
By X-ray powder diffraction, Fourier transform infrared spectroscopy, and differential thermal
analysis it was shown that functionalization of sepiolites by grafting silane reagents occurs mainly on
the surface, whereby their crystalline structure remained unchanged. The efficiency of the adsorbents
in Cr(VI) removal from aqueous solutions follows the order: functionalized acid-activated sepiolite
> functionalized natural sepiolite > acid-activated sepiolite > natural sepiolite. As the number of silanol
groups on the sepiolite surface increased during the acid activation, the silane functionalization increased
and this led to an increase in Cr(VI) adsorption. The adsorption capacity strongly depended on the pH
of the solution from which the adsorption occurred. Maximum Cr(VI) removal was ca. 8.0mg Cr(VI) per
g of functionalized acid-activated sepiolite at initial pH 3, when the pH of solution reached 4.7, and
ca. 2.7mg Cr(VI) per g of functionalized natural sepiolite at initial pH 2, when the pH of the solution
reached 2.5. Cr(VI) removal by the functionalized sepiolites was mainly attributed to electrostatic attraction
between the protonated mercapto groups and the negatively charged Cr(VI) species. The sorption
isotherms showed that Cr(VI) removal by both functionalized sepiolites for all initial investigated solution
pH values is well described using the Dubinin–Radushkevich model. The thermodynamic data suggest
spontaneity of the major physical adsorption process at 298 K.",
publisher = "Elsevier",
journal = "Chemical Engineering Journal",
title = "Chromium (VI) removal from aqueous solutions using mercaptosilane functionalized sepiolites",
volume = "166",
number = "1",
pages = "198-206",
doi = "10.1016/j.cej.2010.10.062"
}

Marjanović, V., Lazarević, S., Janković-Častvan, I., Potkonjak, B., Janaćković, Đ.,& Petrović, R.. (2011). Chromium (VI) removal from aqueous solutions using mercaptosilane functionalized sepiolites. in Chemical Engineering Journal
Elsevier., 166(1), 198-206.
https://doi.org/10.1016/j.cej.2010.10.062

Marjanović V, Lazarević S, Janković-Častvan I, Potkonjak B, Janaćković Đ, Petrović R. Chromium (VI) removal from aqueous solutions using mercaptosilane functionalized sepiolites. in Chemical Engineering Journal. 2011;166(1):198-206.
doi:10.1016/j.cej.2010.10.062 .

Marjanović, Vesna, Lazarević, Slavica, Janković-Častvan, Ivona, Potkonjak, Branislav, Janaćković, Đorđe, Petrović, Radomir, "Chromium (VI) removal from aqueous solutions using mercaptosilane functionalized sepiolites" in Chemical Engineering Journal, 166, no. 1 (2011):198-206,
https://doi.org/10.1016/j.cej.2010.10.062 . .

TY  - CONF
AU  - Jakšić, Zoran
AU  - Jakšić, Olga
AU  - Vujanić, Aleksandar
AU  - Đurić, Zoran G.
AU  - Petrović, Radomir
AU  - Randjelović, Danijela
PY  - 2002
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/85
AB  - We analyze fabrication-induced imperfections and disorder in our photonic crystals (PC) fabricated by microsystem technologies. Based on a correspondence between holograms and photonic crystals, we introduce technological figures of merit valid for arbitrary PC structures. We use these figures of merit to analyze a practical example of a 1D PC structure. To this purpose we designed our PCs for middle-wavelength infrared range using the transfer matrix technique and fabricated them in silicon/silica using rf sputtering. We used scanning electron microscopy to determine the cross-sectional geometrical parameters of PCs and to find out their deviations from the designed values. Fourier infrared spectroscopy was used to measure spectral transmittance of the samples. The observed imperfections result in spectral transmission curves deviating from the designed characteristics, and reduce overall transmission by scattering. The presented analysis enables the prediction of attainable quality of PCs. The approach is applicable to any of 1D, 2D or 3D photonic crystals.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - A consideration of fabrication-induced imperfections in photonic crystals for optical frequencies
VL  - 1
SP  - 293
EP  - 296
DO  - 10.1109/MIEL.2002.1003195
ER  - 

@conference{
author = "Jakšić, Zoran and Jakšić, Olga and Vujanić, Aleksandar and Đurić, Zoran G. and Petrović, Radomir and Randjelović, Danijela",
year = "2002",
abstract = "We analyze fabrication-induced imperfections and disorder in our photonic crystals (PC) fabricated by microsystem technologies. Based on a correspondence between holograms and photonic crystals, we introduce technological figures of merit valid for arbitrary PC structures. We use these figures of merit to analyze a practical example of a 1D PC structure. To this purpose we designed our PCs for middle-wavelength infrared range using the transfer matrix technique and fabricated them in silicon/silica using rf sputtering. We used scanning electron microscopy to determine the cross-sectional geometrical parameters of PCs and to find out their deviations from the designed values. Fourier infrared spectroscopy was used to measure spectral transmittance of the samples. The observed imperfections result in spectral transmission curves deviating from the designed characteristics, and reduce overall transmission by scattering. The presented analysis enables the prediction of attainable quality of PCs. The approach is applicable to any of 1D, 2D or 3D photonic crystals.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "A consideration of fabrication-induced imperfections in photonic crystals for optical frequencies",
volume = "1",
pages = "293-296",
doi = "10.1109/MIEL.2002.1003195"
}

Jakšić, Z., Jakšić, O., Vujanić, A., Đurić, Z. G., Petrović, R.,& Randjelović, D.. (2002). A consideration of fabrication-induced imperfections in photonic crystals for optical frequencies. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 293-296.
https://doi.org/10.1109/MIEL.2002.1003195

Jakšić Z, Jakšić O, Vujanić A, Đurić ZG, Petrović R, Randjelović D. A consideration of fabrication-induced imperfections in photonic crystals for optical frequencies. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:293-296.
doi:10.1109/MIEL.2002.1003195 .

Jakšić, Zoran, Jakšić, Olga, Vujanić, Aleksandar, Đurić, Zoran G., Petrović, Radomir, Randjelović, Danijela, "A consideration of fabrication-induced imperfections in photonic crystals for optical frequencies" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):293-296,
https://doi.org/10.1109/MIEL.2002.1003195 . .

TY  - JOUR
AU  - Todorović, Dragan M.
AU  - Nikolić, Pantelija M.
AU  - Bojičić, Aleksandar I.
AU  - Elazar, Jovan
AU  - Smiljanić, M.
AU  - Petrović, R.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2001
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5820
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs. the modulation frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification to the photoacoustic signal.
The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and the theoretical photoacoustic signals, which provide an indicator of the degree of modification.
PB  - The Japan Society for Analytical Chemistry
T2  - Analytical Sciences
T1  - Investigation of Ion-Modificated Silicon by Photoacoustic Frequency Transmission Technique
VL  - 17
SP  - s295
EP  - s298
DO  - 10.14891/analscisp.17icpp.0.s295.0
ER  - 

@article{
author = "Todorović, Dragan M. and Nikolić, Pantelija M. and Bojičić, Aleksandar I. and Elazar, Jovan and Smiljanić, M. and Petrović, R. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2001",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs. the modulation frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification to the photoacoustic signal.
The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and the theoretical photoacoustic signals, which provide an indicator of the degree of modification.",
publisher = "The Japan Society for Analytical Chemistry",
journal = "Analytical Sciences",
title = "Investigation of Ion-Modificated Silicon by Photoacoustic Frequency Transmission Technique",
volume = "17",
pages = "s295-s298",
doi = "10.14891/analscisp.17icpp.0.s295.0"
}

Todorović, D. M., Nikolić, P. M., Bojičić, A. I., Elazar, J., Smiljanić, M., Petrović, R., Vasiljević-Radović, D.,& Radulović, K.. (2001). Investigation of Ion-Modificated Silicon by Photoacoustic Frequency Transmission Technique. in Analytical Sciences
The Japan Society for Analytical Chemistry., 17, s295-s298.
https://doi.org/10.14891/analscisp.17icpp.0.s295.0

Todorović DM, Nikolić PM, Bojičić AI, Elazar J, Smiljanić M, Petrović R, Vasiljević-Radović D, Radulović K. Investigation of Ion-Modificated Silicon by Photoacoustic Frequency Transmission Technique. in Analytical Sciences. 2001;17:s295-s298.
doi:10.14891/analscisp.17icpp.0.s295.0 .

Todorović, Dragan M., Nikolić, Pantelija M., Bojičić, Aleksandar I., Elazar, Jovan, Smiljanić, M., Petrović, R., Vasiljević-Radović, Dana, Radulović, Katarina, "Investigation of Ion-Modificated Silicon by Photoacoustic Frequency Transmission Technique" in Analytical Sciences, 17 (2001):s295-s298,
https://doi.org/10.14891/analscisp.17icpp.0.s295.0 . .

TY  - CONF
AU  - Dinović, Z.
AU  - Jović, Vesna
AU  - Petrović, R.
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/22
AB  - We used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO x on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy
VL  - 1
SP  - 277
EP  - 280
DO  - 10.1109/ICMEL.2000.840573
ER  - 

@conference{
author = "Dinović, Z. and Jović, Vesna and Petrović, R.",
year = "2000",
abstract = "We used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO x on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy",
volume = "1",
pages = "277-280",
doi = "10.1109/ICMEL.2000.840573"
}

Dinović, Z., Jović, V.,& Petrović, R.. (2000). Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 277-280.
https://doi.org/10.1109/ICMEL.2000.840573

Dinović Z, Jović V, Petrović R. Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:277-280.
doi:10.1109/ICMEL.2000.840573 .

Dinović, Z., Jović, Vesna, Petrović, R., "Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):277-280,
https://doi.org/10.1109/ICMEL.2000.840573 . .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, P.M.
AU  - Smiljanić, Miloljub
AU  - Petrović, R.
AU  - Bojicić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/25
AB  - The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.
PB  - IEEE Computer Society
C3  - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - The Schottky barrier contribution to photoacoustic effect in Au-Si system
VL  - 1
SP  - 189
EP  - 192
DO  - 10.1109/ICMEL.2000.840552
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, P.M. and Smiljanić, Miloljub and Petrović, R. and Bojicić, A.I. and Vasiljević-Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample.",
publisher = "IEEE Computer Society",
journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "The Schottky barrier contribution to photoacoustic effect in Au-Si system",
volume = "1",
pages = "189-192",
doi = "10.1109/ICMEL.2000.840552"
}

Todorović, D. M., Nikolić, P.M., Smiljanić, M., Petrović, R., Bojicić, A.I., Vasiljević-Radović, D.,& Radulović, K.. (2000). The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE Computer Society., 1, 189-192.
https://doi.org/10.1109/ICMEL.2000.840552

Todorović DM, Nikolić P, Smiljanić M, Petrović R, Bojicić A, Vasiljević-Radović D, Radulović K. The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:189-192.
doi:10.1109/ICMEL.2000.840552 .

Todorović, D. M., Nikolić, P.M., Smiljanić, Miloljub, Petrović, R., Bojicić, A.I., Vasiljević-Radović, Dana, Radulović, Katarina, "The Schottky barrier contribution to photoacoustic effect in Au-Si system" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):189-192,
https://doi.org/10.1109/ICMEL.2000.840552 . .