TY  - JOUR
AU  - Randjelović, Danijela
AU  - Petropoulos, Anastasios
AU  - Kaltsas, Grigoris
AU  - Stojanovic, Milos
AU  - Lazić, Žarko
AU  - Đurić, Zoran G.
AU  - Matic, Milan
PY  - 2008
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/401
AB  - This paper presents design, fabrication and experimental results of multipurpose thermopile based sensor which is compatible with technological processes already developed at IHTM-IMTM for fabrication of pressure sensors. Thermal isolation is assured using back etching of bulk silicon. Thermopiles have multilayer structure and sandwich membrane consists of layer of residual n-Si and sputtered oxide. Post-etching technique was developed and functional structures with membranes below 3 mu m were fabricated. Steady state and transient behaviour of fabricated structures were anticipated by applying two-zone 1D analytical model and FEA Comsol simulation. Sensors were tested as ac-dc transfer devices, gas flow meters and vacuum detectors.
PB  - Elsevier Science Sa, Lausanne
T2  - Sensors and Actuators, A: Physical
T1  - Multipurpose MEMS thermal sensor based on thermopiles
VL  - 141
IS  - 2
SP  - 404
EP  - 413
DO  - 10.1016/j.sna.2007.10.043
ER  - 

@article{
author = "Randjelović, Danijela and Petropoulos, Anastasios and Kaltsas, Grigoris and Stojanovic, Milos and Lazić, Žarko and Đurić, Zoran G. and Matic, Milan",
year = "2008",
abstract = "This paper presents design, fabrication and experimental results of multipurpose thermopile based sensor which is compatible with technological processes already developed at IHTM-IMTM for fabrication of pressure sensors. Thermal isolation is assured using back etching of bulk silicon. Thermopiles have multilayer structure and sandwich membrane consists of layer of residual n-Si and sputtered oxide. Post-etching technique was developed and functional structures with membranes below 3 mu m were fabricated. Steady state and transient behaviour of fabricated structures were anticipated by applying two-zone 1D analytical model and FEA Comsol simulation. Sensors were tested as ac-dc transfer devices, gas flow meters and vacuum detectors.",
publisher = "Elsevier Science Sa, Lausanne",
journal = "Sensors and Actuators, A: Physical",
title = "Multipurpose MEMS thermal sensor based on thermopiles",
volume = "141",
number = "2",
pages = "404-413",
doi = "10.1016/j.sna.2007.10.043"
}

Randjelović, D., Petropoulos, A., Kaltsas, G., Stojanovic, M., Lazić, Ž., Đurić, Z. G.,& Matic, M.. (2008). Multipurpose MEMS thermal sensor based on thermopiles. in Sensors and Actuators, A: Physical
Elsevier Science Sa, Lausanne., 141(2), 404-413.
https://doi.org/10.1016/j.sna.2007.10.043

Randjelović D, Petropoulos A, Kaltsas G, Stojanovic M, Lazić Ž, Đurić ZG, Matic M. Multipurpose MEMS thermal sensor based on thermopiles. in Sensors and Actuators, A: Physical. 2008;141(2):404-413.
doi:10.1016/j.sna.2007.10.043 .

Randjelović, Danijela, Petropoulos, Anastasios, Kaltsas, Grigoris, Stojanovic, Milos, Lazić, Žarko, Đurić, Zoran G., Matic, Milan, "Multipurpose MEMS thermal sensor based on thermopiles" in Sensors and Actuators, A: Physical, 141, no. 2 (2008):404-413,
https://doi.org/10.1016/j.sna.2007.10.043 . .

TY  - JOUR
AU  - Đurić, Zoran G.
AU  - Livada, Branko
AU  - Jović, Vesna
AU  - Smiljanić, Miloljub
AU  - Matic, Milan
AU  - Lazić, Žarko
PY  - 1989
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/3070
AB  - In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.
PB  - Elsevier
T2  - Infrared Physics
T1  - Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect
VL  - 29
IS  - 1
SP  - 1
EP  - 7
DO  - 10.1016/0020-0891(89)90002-X
ER  - 

@article{
author = "Đurić, Zoran G. and Livada, Branko and Jović, Vesna and Smiljanić, Miloljub and Matic, Milan and Lazić, Žarko",
year = "1989",
abstract = "In this work a detailed analysis of the quantum efficiency of InSb n+-p photodetectors produced by liquid phase epitaxy is given, in the case when the n+ region is doped to such a level that the Moss-Burstein effect plays an important role. Our starting point was the theoretically determined coefficient of intrinsic absorption and derived expressions for the generated photocurrent in the n+ region, depletion layer and p-phase of the photodetector. The results are presented in the form of graphical dependence of the quantum efficiency on the wavelength, with the electron concentration in the n+ layer as a parameter.",
publisher = "Elsevier",
journal = "Infrared Physics",
title = "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect",
volume = "29",
number = "1",
pages = "1-7",
doi = "10.1016/0020-0891(89)90002-X"
}

Đurić, Z. G., Livada, B., Jović, V., Smiljanić, M., Matic, M.,& Lazić, Ž.. (1989). Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics
Elsevier., 29(1), 1-7.
https://doi.org/10.1016/0020-0891(89)90002-X

Đurić ZG, Livada B, Jović V, Smiljanić M, Matic M, Lazić Ž. Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect. in Infrared Physics. 1989;29(1):1-7.
doi:10.1016/0020-0891(89)90002-X .

Đurić, Zoran G., Livada, Branko, Jović, Vesna, Smiljanić, Miloljub, Matic, Milan, Lazić, Žarko, "Quantum efficiency and responsivity of InSb photodiodes utilizing the Moss-Burstein effect" in Infrared Physics, 29, no. 1 (1989):1-7,
https://doi.org/10.1016/0020-0891(89)90002-X . .