TY  - JOUR
AU  - Nikolić, P.M.
AU  - Vasiljević-Radović, Dana
AU  - Radulović, Katarina
AU  - Bojičić, A.I.
AU  - Luković, D.
AU  - Savić, S.
AU  - Blagojević, V.
AU  - Vujatović, S.
AU  - Lukić, L.
AU  - Urošević, D.
PY  - 2005
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5691
AB  - Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in the GaSe single crystal was investigated using photoacoustic (PA) frequency transmission techniques. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the c-axis ( $\vec{E}\perp c$) and then parallel to it ( $\vec{E}\Vert c$). An obvious difference in the PA phase and amplitude spectra of the same sample for these two cases was shown. The thermal diffusivity DT obtained by the fitting procedure for these two orientations of the electric field were calculated as $D_{T/\!/}=0.46\times10^{-5}$m2/s and $D_{T\perp}=0.62\times10^{-6}$m2/s eg. Their ratio is about 7.4. The electronic transport parameters are also given. The carrier diffusion coefficient D$_{\rm II}$ is $0.53\times10^{-3}$ m2/s and D$_{\perp}$ is $0.3\times10^{-3}$ m2/s.
PB  - EDP Sciences
T2  - J. Phys. IV France
T1  - Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method
VL  - 125
SP  - 427
EP  - 429
DO  - 10.1051/jp4:2005125100
ER  - 

@article{
author = "Nikolić, P.M. and Vasiljević-Radović, Dana and Radulović, Katarina and Bojičić, A.I. and Luković, D. and Savić, S. and Blagojević, V. and Vujatović, S. and Lukić, L. and Urošević, D.",
year = "2005",
abstract = "Anisotropy in thermal and electronic properties for two directions of thermal wave propagation in the GaSe single crystal was investigated using photoacoustic (PA) frequency transmission techniques. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the c-axis ( $\vec{E}\perp c$) and then parallel to it ( $\vec{E}\Vert c$). An obvious difference in the PA phase and amplitude spectra of the same sample for these two cases was shown. The thermal diffusivity DT obtained by the fitting procedure for these two orientations of the electric field were calculated as $D_{T/\!/}=0.46\times10^{-5}$m2/s and $D_{T\perp}=0.62\times10^{-6}$m2/s eg. Their ratio is about 7.4. The electronic transport parameters are also given. The carrier diffusion coefficient D$_{\rm II}$ is $0.53\times10^{-3}$ m2/s and D$_{\perp}$ is $0.3\times10^{-3}$ m2/s.",
publisher = "EDP Sciences",
journal = "J. Phys. IV France",
title = "Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method",
volume = "125",
pages = "427-429",
doi = "10.1051/jp4:2005125100"
}

Nikolić, P.M., Vasiljević-Radović, D., Radulović, K., Bojičić, A.I., Luković, D., Savić, S., Blagojević, V., Vujatović, S., Lukić, L.,& Urošević, D.. (2005). Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method. in J. Phys. IV France
EDP Sciences., 125, 427-429.
https://doi.org/10.1051/jp4:2005125100

Nikolić P, Vasiljević-Radović D, Radulović K, Bojičić A, Luković D, Savić S, Blagojević V, Vujatović S, Lukić L, Urošević D. Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method. in J. Phys. IV France. 2005;125:427-429.
doi:10.1051/jp4:2005125100 .

Nikolić, P.M., Vasiljević-Radović, Dana, Radulović, Katarina, Bojičić, A.I., Luković, D., Savić, S., Blagojević, V., Vujatović, S., Lukić, L., Urošević, D., "Anisotropy in thermal and electronic properties of single crystal GaSe determined by the photoacoustic method" in J. Phys. IV France, 125 (2005):427-429,
https://doi.org/10.1051/jp4:2005125100 . .

TY  - JOUR
AU  - Radulović, Katarina
AU  - Nikolić, Pantelija M.
AU  - Vasiljević-Radović, Dana
AU  - Todorović, Dragan
AU  - Vujatović, Stevan S.
AU  - Bojičić, A. I.
AU  - Blagojević, Vladimir
AU  - Urošević, Dragan
PY  - 2003
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5692
AB  - The contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.
PB  - American Institute of Physics
T2  - Review of Scientific Instruments
T1  - A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors
VL  - 74
IS  - 1
SP  - 595
EP  - 597
DO  - 10.1063/1.1515891
ER  - 

@article{
author = "Radulović, Katarina and Nikolić, Pantelija M. and Vasiljević-Radović, Dana and Todorović, Dragan and Vujatović, Stevan S. and Bojičić, A. I. and Blagojević, Vladimir and Urošević, Dragan",
year = "2003",
abstract = "The contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.",
publisher = "American Institute of Physics",
journal = "Review of Scientific Instruments",
title = "A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors",
volume = "74",
number = "1",
pages = "595-597",
doi = "10.1063/1.1515891"
}

Radulović, K., Nikolić, P. M., Vasiljević-Radović, D., Todorović, D., Vujatović, S. S., Bojičić, A. I., Blagojević, V.,& Urošević, D.. (2003). A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors. in Review of Scientific Instruments
American Institute of Physics., 74(1), 595-597.
https://doi.org/10.1063/1.1515891

Radulović K, Nikolić PM, Vasiljević-Radović D, Todorović D, Vujatović SS, Bojičić AI, Blagojević V, Urošević D. A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors. in Review of Scientific Instruments. 2003;74(1):595-597.
doi:10.1063/1.1515891 .

Radulović, Katarina, Nikolić, Pantelija M., Vasiljević-Radović, Dana, Todorović, Dragan, Vujatović, Stevan S., Bojičić, A. I., Blagojević, Vladimir, Urošević, Dragan, "A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors" in Review of Scientific Instruments, 74, no. 1 (2003):595-597,
https://doi.org/10.1063/1.1515891 . .

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Đurić, S.
AU  - Todorović, Dragan
AU  - Vasiljević-Radović, Dana
AU  - Blagojević, Vladimir
AU  - Mihajlović, P.
AU  - Elazar, Jovan
AU  - Radulović, Katarina
AU  - Bojičić, A.I.
AU  - Urošević, Dragan
PY  - 2001
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5686
AB  - Electron transport properties of single crystal and polycrystalline natural mineral galena (PbS) samples from the Trepča mine, Yugoslavia, were determined using the photoacoustic frequency transmission technique. Their thermal diffusivity (D T≈0.16 × 10−5 m2 s−1), the coefficient of diffusion (D between 0.15×10−2 0.16×10−2 m2 s−1) and lifetime of the excess carrier (τ≈35 μs and the front and rear recombination velocity (s g≈65.5 m s−1 and s b≈66.4 m s−1, respectively), were calculated by comparing the experimental results and the theoretical photoacoustic amplitude and phase signals. The lattice parameter obtained by X-ray work was a =5.936 Å. The free carrier concentration of these single-crystal samples was measured using the Hall method (N = 3×1018 cm−3). Measurements of the optical reflectivity of the same samples, as a function of wavelength, in the infrared and far infrared ranges, were performed. In the far infrared range a free electron plasma frequency was observed and numerically analyzed, using the least-squares fitting procedure. The values of optical parameters were calculated and the value of the free carrier concentration obtained by the Hall method was confirmed.
PB  - Springer-Verlag
T2  - Physics and Chemistry of Minerals
T1  - Application of the Photoacoustic Method for Characterization Of Natural Galena (PbS)
VL  - 28
SP  - 44
EP  - 51
DO  - 10.1007/s002690000121
ER  - 

@article{
author = "Nikolić, Pantelija M. and Đurić, S. and Todorović, Dragan and Vasiljević-Radović, Dana and Blagojević, Vladimir and Mihajlović, P. and Elazar, Jovan and Radulović, Katarina and Bojičić, A.I. and Urošević, Dragan",
year = "2001",
abstract = "Electron transport properties of single crystal and polycrystalline natural mineral galena (PbS) samples from the Trepča mine, Yugoslavia, were determined using the photoacoustic frequency transmission technique. Their thermal diffusivity (D T≈0.16 × 10−5 m2 s−1), the coefficient of diffusion (D between 0.15×10−2 0.16×10−2 m2 s−1) and lifetime of the excess carrier (τ≈35 μs and the front and rear recombination velocity (s g≈65.5 m s−1 and s b≈66.4 m s−1, respectively), were calculated by comparing the experimental results and the theoretical photoacoustic amplitude and phase signals. The lattice parameter obtained by X-ray work was a =5.936 Å. The free carrier concentration of these single-crystal samples was measured using the Hall method (N = 3×1018 cm−3). Measurements of the optical reflectivity of the same samples, as a function of wavelength, in the infrared and far infrared ranges, were performed. In the far infrared range a free electron plasma frequency was observed and numerically analyzed, using the least-squares fitting procedure. The values of optical parameters were calculated and the value of the free carrier concentration obtained by the Hall method was confirmed.",
publisher = "Springer-Verlag",
journal = "Physics and Chemistry of Minerals",
title = "Application of the Photoacoustic Method for Characterization Of Natural Galena (PbS)",
volume = "28",
pages = "44-51",
doi = "10.1007/s002690000121"
}

Nikolić, P. M., Đurić, S., Todorović, D., Vasiljević-Radović, D., Blagojević, V., Mihajlović, P., Elazar, J., Radulović, K., Bojičić, A.I.,& Urošević, D.. (2001). Application of the Photoacoustic Method for Characterization Of Natural Galena (PbS). in Physics and Chemistry of Minerals
Springer-Verlag., 28, 44-51.
https://doi.org/10.1007/s002690000121

Nikolić PM, Đurić S, Todorović D, Vasiljević-Radović D, Blagojević V, Mihajlović P, Elazar J, Radulović K, Bojičić A, Urošević D. Application of the Photoacoustic Method for Characterization Of Natural Galena (PbS). in Physics and Chemistry of Minerals. 2001;28:44-51.
doi:10.1007/s002690000121 .

Nikolić, Pantelija M., Đurić, S., Todorović, Dragan, Vasiljević-Radović, Dana, Blagojević, Vladimir, Mihajlović, P., Elazar, Jovan, Radulović, Katarina, Bojičić, A.I., Urošević, Dragan, "Application of the Photoacoustic Method for Characterization Of Natural Galena (PbS)" in Physics and Chemistry of Minerals, 28 (2001):44-51,
https://doi.org/10.1007/s002690000121 . .

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Todorović, Dragan M.
AU  - Vujatović, S.S.
AU  - Djurić, Stevan
AU  - Mihailović, P.
AU  - Blagojević, V.
AU  - Radulović, Katarina
AU  - Bojičić, A.I.
AU  - Vasiljević-Radović, Dana
AU  - Elazar, Jovan
AU  - Urošević, Dragan
PY  - 1998
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5762
AB  - Anisotropy in the thermal and electronic properties for two directions of a thermal wave propagation in GeSe2 single crystal was investigated using the photoacoustic frequency transmission technique. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the "c" axis (El⊥c), and then parallel to it (El//c) . It is shown that there is an obvious difference in the PA amplitude and phase spectra of the same sample, for cases when El//c and El⊥c axis. The results for thermal diffusivity DT obtained by fitting procedure for these two orientations of the electric field with regard to the "c" axis, are calculated: DT//=1.1×10-2 and DT⊥=1.7×10-3 cm2/s, e.g. their ratio is 6.6. The electronic transport parameters are also given: the carrier ambipolar diffusion coefficient D//=1.5 cm2/s and D⊥=2.5 cm2/s.
PB  - The Japan Society of Applied Physics
T2  - Japanese Journal of Applied Physics
T1  - Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method
VL  - 37
SP  - 4925
EP  - 4930
DO  - 10.1143/JJAP.37.4925
ER  - 

@article{
author = "Nikolić, Pantelija M. and Todorović, Dragan M. and Vujatović, S.S. and Djurić, Stevan and Mihailović, P. and Blagojević, V. and Radulović, Katarina and Bojičić, A.I. and Vasiljević-Radović, Dana and Elazar, Jovan and Urošević, Dragan",
year = "1998",
abstract = "Anisotropy in the thermal and electronic properties for two directions of a thermal wave propagation in GeSe2 single crystal was investigated using the photoacoustic frequency transmission technique. First, the electric field of an incident polarized light beam was adjusted to be perpendicular to the "c" axis (El⊥c), and then parallel to it (El//c) . It is shown that there is an obvious difference in the PA amplitude and phase spectra of the same sample, for cases when El//c and El⊥c axis. The results for thermal diffusivity DT obtained by fitting procedure for these two orientations of the electric field with regard to the "c" axis, are calculated: DT//=1.1×10-2 and DT⊥=1.7×10-3 cm2/s, e.g. their ratio is 6.6. The electronic transport parameters are also given: the carrier ambipolar diffusion coefficient D//=1.5 cm2/s and D⊥=2.5 cm2/s.",
publisher = "The Japan Society of Applied Physics",
journal = "Japanese Journal of Applied Physics",
title = "Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method",
volume = "37",
pages = "4925-4930",
doi = "10.1143/JJAP.37.4925"
}

Nikolić, P. M., Todorović, D. M., Vujatović, S.S., Djurić, S., Mihailović, P., Blagojević, V., Radulović, K., Bojičić, A.I., Vasiljević-Radović, D., Elazar, J.,& Urošević, D.. (1998). Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method. in Japanese Journal of Applied Physics
The Japan Society of Applied Physics., 37, 4925-4930.
https://doi.org/10.1143/JJAP.37.4925

Nikolić PM, Todorović DM, Vujatović S, Djurić S, Mihailović P, Blagojević V, Radulović K, Bojičić A, Vasiljević-Radović D, Elazar J, Urošević D. Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method. in Japanese Journal of Applied Physics. 1998;37:4925-4930.
doi:10.1143/JJAP.37.4925 .

Nikolić, Pantelija M., Todorović, Dragan M., Vujatović, S.S., Djurić, Stevan, Mihailović, P., Blagojević, V., Radulović, Katarina, Bojičić, A.I., Vasiljević-Radović, Dana, Elazar, Jovan, Urošević, Dragan, "Anisotropy in Thermal and Electronic Properties of Single Crystal GeSe2 Obtained by the Photoacoustic Method" in Japanese Journal of Applied Physics, 37 (1998):4925-4930,
https://doi.org/10.1143/JJAP.37.4925 . .

TY  - JOUR
AU  - Todorović, D.M.
AU  - Nikolić, P.M.
AU  - Bojičić, A.I.
AU  - Radulović, K.T.
PY  - 1997
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5708
AB  - The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.
PB  - The American Physical Society
T2  - Phys. Rev. B
T1  - Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors
VL  - 55
IS  - 23
SP  - 15631
EP  - 15642
DO  - 10.1103/PhysRevB.55.15631
ER  - 

@article{
author = "Todorović, D.M. and Nikolić, P.M. and Bojičić, A.I. and Radulović, K.T.",
year = "1997",
abstract = "The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.",
publisher = "The American Physical Society",
journal = "Phys. Rev. B",
title = "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors",
volume = "55",
number = "23",
pages = "15631-15642",
doi = "10.1103/PhysRevB.55.15631"
}

Todorović, D.M., Nikolić, P.M., Bojičić, A.I.,& Radulović, K.T.. (1997). Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B
The American Physical Society., 55(23), 15631-15642.
https://doi.org/10.1103/PhysRevB.55.15631

Todorović D, Nikolić P, Bojičić A, Radulović K. Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors. in Phys. Rev. B. 1997;55(23):15631-15642.
doi:10.1103/PhysRevB.55.15631 .

Todorović, D.M., Nikolić, P.M., Bojičić, A.I., Radulović, K.T., "Thermoelastic and electronic strain contributions to the frequency transmission photoacousticeffect in semiconductors" in Phys. Rev. B, 55, no. 23 (1997):15631-15642,
https://doi.org/10.1103/PhysRevB.55.15631 . .

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Todorović, Dragan
AU  - Bojičić, A.I.
AU  - Radulović, Katarina
AU  - Urošević, Dragan
AU  - Elazar, Jovan
AU  - Blagojević, Vladimir
AU  - Mihajlović, P.
AU  - Miletić, Milan
PY  - 1996
UR  - https://cer.ihtm.bg.ac.rs/handle/123456789/5760
AB  - Electron transport properties of single-crystal GaAs were determined using the photoacoustic method with the transmission detection configuration. The excess-carrier lifetime, the front and the rear recombination velocity, and the coefficients of the carrier diffusion and the thermal diffusivity were determined by comparing experimental results and theoretical photoacoustic signals.
PB  - IOP Publishing Ltd
T2  - Journal of Physics: Condensed Matter
T1  - Transport properties of carriers in GaAs obtained using the photoacoustic method with the transmission detection configuration
VL  - 8
IS  - 30
SP  - 5673
EP  - 5683
DO  - 10.1088/0953-8984/8/30/016
ER  - 

@article{
author = "Nikolić, Pantelija M. and Todorović, Dragan and Bojičić, A.I. and Radulović, Katarina and Urošević, Dragan and Elazar, Jovan and Blagojević, Vladimir and Mihajlović, P. and Miletić, Milan",
year = "1996",
abstract = "Electron transport properties of single-crystal GaAs were determined using the photoacoustic method with the transmission detection configuration. The excess-carrier lifetime, the front and the rear recombination velocity, and the coefficients of the carrier diffusion and the thermal diffusivity were determined by comparing experimental results and theoretical photoacoustic signals.",
publisher = "IOP Publishing Ltd",
journal = "Journal of Physics: Condensed Matter",
title = "Transport properties of carriers in GaAs obtained using the photoacoustic method with the transmission detection configuration",
volume = "8",
number = "30",
pages = "5673-5683",
doi = "10.1088/0953-8984/8/30/016"
}

Nikolić, P. M., Todorović, D., Bojičić, A.I., Radulović, K., Urošević, D., Elazar, J., Blagojević, V., Mihajlović, P.,& Miletić, M.. (1996). Transport properties of carriers in GaAs obtained using the photoacoustic method with the transmission detection configuration. in Journal of Physics: Condensed Matter
IOP Publishing Ltd., 8(30), 5673-5683.
https://doi.org/10.1088/0953-8984/8/30/016

Nikolić PM, Todorović D, Bojičić A, Radulović K, Urošević D, Elazar J, Blagojević V, Mihajlović P, Miletić M. Transport properties of carriers in GaAs obtained using the photoacoustic method with the transmission detection configuration. in Journal of Physics: Condensed Matter. 1996;8(30):5673-5683.
doi:10.1088/0953-8984/8/30/016 .

Nikolić, Pantelija M., Todorović, Dragan, Bojičić, A.I., Radulović, Katarina, Urošević, Dragan, Elazar, Jovan, Blagojević, Vladimir, Mihajlović, P., Miletić, Milan, "Transport properties of carriers in GaAs obtained using the photoacoustic method with the transmission detection configuration" in Journal of Physics: Condensed Matter, 8, no. 30 (1996):5673-5683,
https://doi.org/10.1088/0953-8984/8/30/016 . .