Analysis of radiation absorptance in silicon ultraviolet detector
Samo za registrovane korisnike
2000
Autori
Danković, T.Djurić, Z.
Jakšić, Zoran
Randjelović, Danijela
Petrovic, R.
Ehrfeld, W.
Schmidt, A.
Hecker, K.
Konferencijski prilog (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Novel silicon ultraviolet flame detector structures are described. The first detector structure is fabricated in a thin silicon layer on a SOI wafer. The second structure is made on a silicon wafer which is back-side etched under the active detector area. We also proposed a designed UV filter utilising 1-D photonic crystal. The analysis of radiation absorptance is performed and the results presented.
Ključne reči:
Radiation detectors / Photonic band gap / Photonic crystalsIzvor:
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 2, 585-588Izdavač:
- Institute of Electrical and Electronics Engineers (IEEE)
Napomena:
- 2000 22nd International Conference on Microelectronics.
- Date of Conference: 14-17 May 2000
Institucija/grupa
IHTMTY - CONF AU - Danković, T. AU - Djurić, Z. AU - Jakšić, Zoran AU - Randjelović, Danijela AU - Petrovic, R. AU - Ehrfeld, W. AU - Schmidt, A. AU - Hecker, K. PY - 2000 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/7787 AB - Novel silicon ultraviolet flame detector structures are described. The first detector structure is fabricated in a thin silicon layer on a SOI wafer. The second structure is made on a silicon wafer which is back-side etched under the active detector area. We also proposed a designed UV filter utilising 1-D photonic crystal. The analysis of radiation absorptance is performed and the results presented. PB - Institute of Electrical and Electronics Engineers (IEEE) C3 - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings T1 - Analysis of radiation absorptance in silicon ultraviolet detector VL - 2 SP - 585 EP - 588 DO - 10.1109/ICMEL.2000.838759 ER -
@conference{ author = "Danković, T. and Djurić, Z. and Jakšić, Zoran and Randjelović, Danijela and Petrovic, R. and Ehrfeld, W. and Schmidt, A. and Hecker, K.", year = "2000", abstract = "Novel silicon ultraviolet flame detector structures are described. The first detector structure is fabricated in a thin silicon layer on a SOI wafer. The second structure is made on a silicon wafer which is back-side etched under the active detector area. We also proposed a designed UV filter utilising 1-D photonic crystal. The analysis of radiation absorptance is performed and the results presented.", publisher = "Institute of Electrical and Electronics Engineers (IEEE)", journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings", title = "Analysis of radiation absorptance in silicon ultraviolet detector", volume = "2", pages = "585-588", doi = "10.1109/ICMEL.2000.838759" }
Danković, T., Djurić, Z., Jakšić, Z., Randjelović, D., Petrovic, R., Ehrfeld, W., Schmidt, A.,& Hecker, K.. (2000). Analysis of radiation absorptance in silicon ultraviolet detector. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings Institute of Electrical and Electronics Engineers (IEEE)., 2, 585-588. https://doi.org/10.1109/ICMEL.2000.838759
Danković T, Djurić Z, Jakšić Z, Randjelović D, Petrovic R, Ehrfeld W, Schmidt A, Hecker K. Analysis of radiation absorptance in silicon ultraviolet detector. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;2:585-588. doi:10.1109/ICMEL.2000.838759 .
Danković, T., Djurić, Z., Jakšić, Zoran, Randjelović, Danijela, Petrovic, R., Ehrfeld, W., Schmidt, A., Hecker, K., "Analysis of radiation absorptance in silicon ultraviolet detector" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2 (2000):585-588, https://doi.org/10.1109/ICMEL.2000.838759 . .