Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
Samo za registrovane korisnike
1995
Autori
Dramićanin, MiroslavRistovski, Zoran D.
Nikolić, Pantelija M.
Vasiljević, Dana G.
Todorović, Dragan M.
Članak u časopisu (Objavljena verzija)
,
The American Physical Society
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
Ključne reči:
photoacoustic measurements / heat-transmission / semiconductors / Ge single crystalIzvor:
Physical Review B, 1995, 51, 20, 14226-14232Izdavač:
- The American Physical Society
DOI: 10.1103/PhysRevB.51.14226
ISSN: 1098-0121
PubMed: 9978350
Scopus: 2-s2.0-0001434307
Institucija/grupa
IHTMTY - JOUR AU - Dramićanin, Miroslav AU - Ristovski, Zoran D. AU - Nikolić, Pantelija M. AU - Vasiljević, Dana G. AU - Todorović, Dragan M. PY - 1995 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/7468 AB - Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity. PB - The American Physical Society T2 - Physical Review B T1 - Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal VL - 51 IS - 20 SP - 14226 EP - 14232 DO - 10.1103/PhysRevB.51.14226 ER -
@article{ author = "Dramićanin, Miroslav and Ristovski, Zoran D. and Nikolić, Pantelija M. and Vasiljević, Dana G. and Todorović, Dragan M.", year = "1995", abstract = "Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.", publisher = "The American Physical Society", journal = "Physical Review B", title = "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal", volume = "51", number = "20", pages = "14226-14232", doi = "10.1103/PhysRevB.51.14226" }
Dramićanin, M., Ristovski, Z. D., Nikolić, P. M., Vasiljević, D. G.,& Todorović, D. M.. (1995). Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B The American Physical Society., 51(20), 14226-14232. https://doi.org/10.1103/PhysRevB.51.14226
Dramićanin M, Ristovski ZD, Nikolić PM, Vasiljević DG, Todorović DM. Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B. 1995;51(20):14226-14232. doi:10.1103/PhysRevB.51.14226 .
Dramićanin, Miroslav, Ristovski, Zoran D., Nikolić, Pantelija M., Vasiljević, Dana G., Todorović, Dragan M., "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal" in Physical Review B, 51, no. 20 (1995):14226-14232, https://doi.org/10.1103/PhysRevB.51.14226 . .