One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region
Samo za registrovane korisnike
1997
Autori
Đurić, ZoranPetrović, Radomir
Randjelović, Danijela
Danković, Tatjana
Jakšić, Zoran
Ehrfeld, Wolfgang
Feiertag, Georg
Freimuth, H.
Konferencijski prilog (Objavljena verzija)
,
IEEE
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Abstract
Based on our detailed theoretical analysis we fabricated 1D Si/SiO2 photonic crystals with donor and acceptor defects. We observed their photonic band-gaps and defect modes by measuring the infrared transmission of the samples. We propose here the application of this type of structures for enhancement of InSb photodetector detectivity.
Ključne reči:
Photonic crystals / Crystal defects / Energy gap / Infrared spectroscopy / Infrared transmission / SilicaIzvor:
Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia, 1997, 1, 99-102Izdavač:
- Institute of Electrical and Electronics Engineers (IEEE)
Finansiranje / projekti:
- Volkswagen Foundation within the framework of the project I/72 957
Institucija/grupa
IHTMTY - CONF AU - Đurić, Zoran AU - Petrović, Radomir AU - Randjelović, Danijela AU - Danković, Tatjana AU - Jakšić, Zoran AU - Ehrfeld, Wolfgang AU - Feiertag, Georg AU - Freimuth, H. PY - 1997 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/6863 AB - Abstract Based on our detailed theoretical analysis we fabricated 1D Si/SiO2 photonic crystals with donor and acceptor defects. We observed their photonic band-gaps and defect modes by measuring the infrared transmission of the samples. We propose here the application of this type of structures for enhancement of InSb photodetector detectivity. PB - Institute of Electrical and Electronics Engineers (IEEE) C3 - Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia T1 - One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region VL - 1 SP - 99 EP - 102 DO - 10.1109/ICMEL.1997.625190 ER -
@conference{ author = "Đurić, Zoran and Petrović, Radomir and Randjelović, Danijela and Danković, Tatjana and Jakšić, Zoran and Ehrfeld, Wolfgang and Feiertag, Georg and Freimuth, H.", year = "1997", abstract = "Abstract Based on our detailed theoretical analysis we fabricated 1D Si/SiO2 photonic crystals with donor and acceptor defects. We observed their photonic band-gaps and defect modes by measuring the infrared transmission of the samples. We propose here the application of this type of structures for enhancement of InSb photodetector detectivity.", publisher = "Institute of Electrical and Electronics Engineers (IEEE)", journal = "Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia", title = "One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region", volume = "1", pages = "99-102", doi = "10.1109/ICMEL.1997.625190" }
Đurić, Z., Petrović, R., Randjelović, D., Danković, T., Jakšić, Z., Ehrfeld, W., Feiertag, G.,& Freimuth, H.. (1997). One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region. in Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia Institute of Electrical and Electronics Engineers (IEEE)., 1, 99-102. https://doi.org/10.1109/ICMEL.1997.625190
Đurić Z, Petrović R, Randjelović D, Danković T, Jakšić Z, Ehrfeld W, Feiertag G, Freimuth H. One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region. in Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia. 1997;1:99-102. doi:10.1109/ICMEL.1997.625190 .
Đurić, Zoran, Petrović, Radomir, Randjelović, Danijela, Danković, Tatjana, Jakšić, Zoran, Ehrfeld, Wolfgang, Feiertag, Georg, Freimuth, H., "One dimensional Si-SiO2 photonic crystal with defects intended for use in infrared spectral region" in Proceedings - 21st International Conference on Microelectronics MIEL 97, 14-17 September 1997, Niš, Serbia, 1 (1997):99-102, https://doi.org/10.1109/ICMEL.1997.625190 . .