Odredjivanje brzine nagrizanja monokristalnog si (100) orijentacije u puferovanom rastvoru fluorovodonične kiseline
Etch rate determination of (100) oriented monocrystalline si in buffered hydrofluoric acid solution
dc.creator | Jović, Vesna | |
dc.creator | Lamovec, Jelena | |
dc.creator | Mladenović, Ivana | |
dc.creator | Popović, Mirjana | |
dc.date.accessioned | 2023-02-19T22:28:07Z | |
dc.date.available | 2023-02-19T22:28:07Z | |
dc.date.issued | 2012 | |
dc.identifier.isbn | 978-86-80509-67-9 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/5746 | |
dc.description.abstract | Izučavan je uticaj rastvorenog O2 u BOE (puferovanim rastvorima za nagrizanje SiO2 ) sastava 7 vol.(40 tež. % NH4F) : 1 vol. (49 tež. % HF), koji se uobičajeno koristi za delineaciju SiO2 u procesima mikrofabrikacije primenom fotolitografije. Monokristalni Si se nagriza u ovom rastvoru samo ako on sadrži kiseonik. Utvrñeno je da je brzina nagrizanja Si u navedenom rastvoru koji je zasićen sa O2 , parcijalnog pritisaka u gasnoj fazi od 1 atm, 10.2 nm⋅min-1 na 23 oC i 18,6 nm⋅min-1 na 45 oC. | sr |
dc.description.abstract | The influence of dissolved oxygen in BOE (buffered etchant for SiO2) solution with composition 7 vol. % (40 wt.% NH4F) : 1 vol % (49 wt. % HF) have been investigated. This is solution which usually have been used for delineation of SiO2 on monocrystalline Si in microfabrication. It is faund that the dissolved oxygen facilitates the etching of Si, but makes etching slower for SiO2. Etching rate of Si(100) for solution saturated with O2 bubbling at 1 atm pressure have been estimated as 10.2 nm⋅min-1 at 23 oC and 18,6 nm⋅min-1 at 45 oC. | sr |
dc.language.iso | sr | sr |
dc.publisher | Beograd : Društvo za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku | sr |
dc.relation | info:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS// | sr |
dc.rights | openAccess | sr |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.source | Zbornik - 56. konferencija za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku, ETRAN 2012, Zlatibor | sr |
dc.subject | Rastvoreni O2 | sr |
dc.subject | fotolitografija | sr |
dc.subject | dissolved oxygen | sr |
dc.subject | microfabrication | sr |
dc.title | Odredjivanje brzine nagrizanja monokristalnog si (100) orijentacije u puferovanom rastvoru fluorovodonične kiseline | sr |
dc.title | Etch rate determination of (100) oriented monocrystalline si in buffered hydrofluoric acid solution | sr |
dc.type | conferenceObject | sr |
dc.rights.license | BY | sr |
dc.citation.issue | MO 3.2 | |
dc.citation.spage | 1 | |
dc.citation.epage | 5 | |
dc.citation.rank | M63 | |
dc.identifier.rcub | https://hdl.handle.net/21.15107/rcub_cer_5746 | |
dc.identifier.fulltext | http://cer.ihtm.bg.ac.rs/bitstream/id/23843/bitstream_23843.pdf | |
dc.type.version | publishedVersion | sr |