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A Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductors

dc.creatorRadulović, Katarina
dc.creatorNikolić, Pantelija M.
dc.creatorVasiljević-Radović, Dana
dc.creatorTodorović, Dragan
dc.creatorVujatović, Stevan S.
dc.creatorBojičić, A. I.
dc.creatorBlagojević, Vladimir
dc.creatorUrošević, Dragan
dc.date.accessioned2023-02-15T22:00:06Z
dc.date.available2023-02-15T22:00:06Z
dc.date.issued2003
dc.identifier.issn0034-6748
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/5692
dc.description.abstractThe contribution of free carrier transport processes to the photoacoustic effect in doped AIVBVI compounds was investigated using the photoacoustic (PA) frequency modulated transmission technique as a valuable tool in the study of thermal and carrier transport processes in semiconductors. The PA signals were measured and analyzed as a function of the modulation frequency in a specially constructed PA cell. The multiparametric fitting procedure was used to obtain some thermal and electronic transport parameters of doped and pure AIVBVI compounds.sr
dc.language.isoensr
dc.publisherAmerican Institute of Physicssr
dc.relationMinistry of Sciences, Technologies and Development, Republic of Serbia Grant No. I.T.1.04.0062.Bsr
dc.rightsrestrictedAccesssr
dc.sourceReview of Scientific Instrumentssr
dc.subjectphotoacoustic effectsr
dc.subjectsemiconductorssr
dc.titleA Contribution of Carrier Transport Processes to the Photoacoustic Effects in Doped Narrow Gap Semiconductorssr
dc.typearticlesr
dc.rights.licenseARRsr
dc.citation.volume74
dc.citation.issue1
dc.citation.spage595
dc.citation.epage597
dc.citation.rankaM21
dc.identifier.doi10.1063/1.1515891
dc.identifier.scopus2-s2.0-0037283846
dc.type.versionpublishedVersionsr


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