Recharging process of commercial floating-gate MOS transistor in dosimetry application
Autori
Ilić, Stefan D.Andjelković, Marko S.
Duane, Russell
Palma, Alberto J.
Sarajlić, Milija
Stanković, Srboljub
Ristić, Goran
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.
Ključne reči:
Floating gate / Radiation sensor / EPAD / Recharging / Programming cell / Non-volatile memoryIzvor:
Microelectronics Reliability, 2021, 126, 114322-Izdavač:
- Elsevier
Finansiranje / projekti:
- WIDESPREAD-2018-3-TWINNING
- Zajednička istraživanja merenja i uticaja jonizujućeg i UV zračenja u oblasti medicine i zaštite životne sredine (RS-MESTD-Integrated and Interdisciplinary Research (IIR or III)-43011)
- Ministarstvo nauke, tehnološkog razvoja i inovacija Republike Srbije, institucionalno finansiranje - 200026 (Univerzitet u Beogradu, Institut za hemiju, tehnologiju i metalurgiju - IHTM) (RS-MESTD-inst-2020-200026)
- ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments (EU-H2020-857558)
DOI: 10.1016/j.microrel.2021.114322
ISSN: 0026-2714
WoS: 000733412800004
Scopus: 2-s2.0-85120850474
Institucija/grupa
IHTMTY - JOUR AU - Ilić, Stefan D. AU - Andjelković, Marko S. AU - Duane, Russell AU - Palma, Alberto J. AU - Sarajlić, Milija AU - Stanković, Srboljub AU - Ristić, Goran PY - 2021 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/4911 AB - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes. PB - Elsevier T2 - Microelectronics Reliability T1 - Recharging process of commercial floating-gate MOS transistor in dosimetry application VL - 126 SP - 114322 DO - 10.1016/j.microrel.2021.114322 ER -
@article{ author = "Ilić, Stefan D. and Andjelković, Marko S. and Duane, Russell and Palma, Alberto J. and Sarajlić, Milija and Stanković, Srboljub and Ristić, Goran", year = "2021", abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.", publisher = "Elsevier", journal = "Microelectronics Reliability", title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application", volume = "126", pages = "114322", doi = "10.1016/j.microrel.2021.114322" }
Ilić, S. D., Andjelković, M. S., Duane, R., Palma, A. J., Sarajlić, M., Stanković, S.,& Ristić, G.. (2021). Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability Elsevier., 126, 114322. https://doi.org/10.1016/j.microrel.2021.114322
Ilić SD, Andjelković MS, Duane R, Palma AJ, Sarajlić M, Stanković S, Ristić G. Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability. 2021;126:114322. doi:10.1016/j.microrel.2021.114322 .
Ilić, Stefan D., Andjelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran, "Recharging process of commercial floating-gate MOS transistor in dosimetry application" in Microelectronics Reliability, 126 (2021):114322, https://doi.org/10.1016/j.microrel.2021.114322 . .