Investigation of interface and surface energy states in semiconductors by PA method
Само за регистроване кориснике
2008
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
Извор:
European Physical Journal: Special Topics, 2008, 153, 1, 247-250Финансирање / пројекти:
- TR6151 - Micro and Nanosystem Technologies, Structures and Sensors
DOI: 10.1140/epjst/e2008-00437-1
ISSN: 1951-6355
WoS: 000254041300056
Scopus: 2-s2.0-40949096551
Институција/група
IHTMTY - CONF AU - Todorović, D. M. AU - Smiljanić, Miloljub AU - Jović, Vesna AU - Sarajlić, Milija AU - Grozdić, T. PY - 2008 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/481 AB - The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES. C3 - European Physical Journal: Special Topics T1 - Investigation of interface and surface energy states in semiconductors by PA method VL - 153 IS - 1 SP - 247 EP - 250 DO - 10.1140/epjst/e2008-00437-1 ER -
@conference{ author = "Todorović, D. M. and Smiljanić, Miloljub and Jović, Vesna and Sarajlić, Milija and Grozdić, T.", year = "2008", abstract = "The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.", journal = "European Physical Journal: Special Topics", title = "Investigation of interface and surface energy states in semiconductors by PA method", volume = "153", number = "1", pages = "247-250", doi = "10.1140/epjst/e2008-00437-1" }
Todorović, D. M., Smiljanić, M., Jović, V., Sarajlić, M.,& Grozdić, T.. (2008). Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics, 153(1), 247-250. https://doi.org/10.1140/epjst/e2008-00437-1
Todorović DM, Smiljanić M, Jović V, Sarajlić M, Grozdić T. Investigation of interface and surface energy states in semiconductors by PA method. in European Physical Journal: Special Topics. 2008;153(1):247-250. doi:10.1140/epjst/e2008-00437-1 .
Todorović, D. M., Smiljanić, Miloljub, Jović, Vesna, Sarajlić, Milija, Grozdić, T., "Investigation of interface and surface energy states in semiconductors by PA method" in European Physical Journal: Special Topics, 153, no. 1 (2008):247-250, https://doi.org/10.1140/epjst/e2008-00437-1 . .