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Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance
dc.creator | Đurić, Zoran G. | |
dc.creator | Smiljanić, Miloljub | |
dc.creator | Tjapkin, D. | |
dc.date.accessioned | 2019-09-10T14:02:23Z | |
dc.date.available | 2019-09-10T14:02:23Z | |
dc.date.issued | 1975 | |
dc.identifier.issn | 00381101 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/3075 | |
dc.description.abstract | It is shown that the reciprocal value of low frequency capacitance of a MISIM structure can be represented by a sum of reciprocal values of insulator layer and surface space charge capacitances and an “interaction” term which is a consequence of the finiteness of the semiconductor layer. General formulae are derived for the low frequency capacitance of a MISIM structure with nondegenerate semiconductor. Analytical and numerical calculations are given for a MISIM structure with intrinsic semiconductor layer. | en |
dc.publisher | Elsevier | en |
dc.relation | Republic Counsil of Scientific Research of S.R. Serbia, (Under Contracts No. 620/13). | |
dc.rights | restrictedAccess | |
dc.source | Solid-State Electronics | en |
dc.title | Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance | en |
dc.type | article | en |
dc.rights.license | ARR | |
dcterms.abstract | Тјапкин, Д.; Смиљанић, Милољуб; Дјурић, З.; | |
dc.rights.holder | Elsevier | |
dc.citation.volume | 18 | |
dc.citation.issue | 10 | |
dc.citation.spage | 827 | |
dc.citation.epage | 831 | |
dc.identifier.doi | 10.1016/0038-1101(75)90002-7 | |
dc.identifier.scopus | 2-s2.0-0016564891 | |
dc.type.version | publishedVersion |