Investigation of the ion defect states by photoacoustic spectroscopy
Само за регистроване кориснике
2006
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.
Извор:
25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 611-614Институција/група
IHTMTY - CONF AU - Todorović, D. M. AU - Jović, Vesna AU - Smiljanić, Miloljub AU - Grozdić, T. PY - 2006 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/285 AB - The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions. C3 - 25th International Conference on Microelectronics, MIEL 2006 - Proceedings T1 - Investigation of the ion defect states by photoacoustic spectroscopy SP - 611 EP - 614 DO - 10.1109/ICMEL.2006.1651031 ER -
@conference{ author = "Todorović, D. M. and Jović, Vesna and Smiljanić, Miloljub and Grozdić, T.", year = "2006", abstract = "The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the iondefect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energydependent distribution of interface states in SiO2 - Si system with different concentration of Na-ions.", journal = "25th International Conference on Microelectronics, MIEL 2006 - Proceedings", title = "Investigation of the ion defect states by photoacoustic spectroscopy", pages = "611-614", doi = "10.1109/ICMEL.2006.1651031" }
Todorović, D. M., Jović, V., Smiljanić, M.,& Grozdić, T.. (2006). Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 611-614. https://doi.org/10.1109/ICMEL.2006.1651031
Todorović DM, Jović V, Smiljanić M, Grozdić T. Investigation of the ion defect states by photoacoustic spectroscopy. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:611-614. doi:10.1109/ICMEL.2006.1651031 .
Todorović, D. M., Jović, Vesna, Smiljanić, Miloljub, Grozdić, T., "Investigation of the ion defect states by photoacoustic spectroscopy" in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):611-614, https://doi.org/10.1109/ICMEL.2006.1651031 . .