Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy
Samo za registrovane korisnike
2000
Konferencijski prilog (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
We used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO x on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching.
Izvor:
22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 277-280Izdavač:
- IEEE Computer Society
Institucija/grupa
IHTMTY - CONF AU - Dinović, Z. AU - Jović, Vesna AU - Petrović, R. PY - 2000 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/22 AB - We used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO x on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching. PB - IEEE Computer Society C3 - 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings T1 - Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy VL - 1 SP - 277 EP - 280 DO - 10.1109/ICMEL.2000.840573 ER -
@conference{ author = "Dinović, Z. and Jović, Vesna and Petrović, R.", year = "2000", abstract = "We used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO x on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching.", publisher = "IEEE Computer Society", journal = "22nd International Conference on Microelectronics, MIEL 2000 - Proceedings", title = "Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy", volume = "1", pages = "277-280", doi = "10.1109/ICMEL.2000.840573" }
Dinović, Z., Jović, V.,& Petrović, R.. (2000). Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings IEEE Computer Society., 1, 277-280. https://doi.org/10.1109/ICMEL.2000.840573
Dinović Z, Jović V, Petrović R. Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy. in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:277-280. doi:10.1109/ICMEL.2000.840573 .
Dinović, Z., Jović, Vesna, Petrović, R., "Selective area epitaxial growth of Hg1-xCdxTe by isothermal vapor-phase epitaxy" in 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):277-280, https://doi.org/10.1109/ICMEL.2000.840573 . .