Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2
Samo za registrovane korisnike
2016
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
We study ballistic electron transport through single or double barriers on monolayer MoS2, of width d, in the presence of a ferromagnetic field Moran antiferromagnetic field F. The total conductance,gc, its spin-up and spin-down components, and the polarization oscillate with d or the distance b between two barriers. The corresponding oscillation periods are different. The conductance g(c) versus M decreases in a fluctuating manner with a steep decline at certain value of M. As a function of M the spin polarization P-s oscillates before it becomes 100% while the valley polarization 13, oscillates and steadily increases.
Ključne reči:
Quantum transport / Low dimensional physics / NanostructuresIzvor:
Physica E-Low-Dimensional Systems & Nanostructures, 2016, 75, 317-321Izdavač:
- Elsevier
Finansiranje / projekti:
- Mikro, nano-sistemi i senzori za primenu u elektroprivredi, procesnoj industriji i zaštiti životne sredine (RS-MESTD-Technological Development (TD or TR)-32008)
- Canadian NSERC - OGP0121756
DOI: 10.1016/j.physe.2015.10.003
ISSN: 1386-9477
WoS: 000363564700044
Scopus: 2-s2.0-84943535678
Institucija/grupa
IHTMTY - JOUR AU - Krstajić, Predrag AU - Vasilopoulos, Panagiotis AU - Tahir, Muhammad PY - 2016 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1985 AB - We study ballistic electron transport through single or double barriers on monolayer MoS2, of width d, in the presence of a ferromagnetic field Moran antiferromagnetic field F. The total conductance,gc, its spin-up and spin-down components, and the polarization oscillate with d or the distance b between two barriers. The corresponding oscillation periods are different. The conductance g(c) versus M decreases in a fluctuating manner with a steep decline at certain value of M. As a function of M the spin polarization P-s oscillates before it becomes 100% while the valley polarization 13, oscillates and steadily increases. PB - Elsevier T2 - Physica E-Low-Dimensional Systems & Nanostructures T1 - Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2 VL - 75 SP - 317 EP - 321 DO - 10.1016/j.physe.2015.10.003 ER -
@article{ author = "Krstajić, Predrag and Vasilopoulos, Panagiotis and Tahir, Muhammad", year = "2016", abstract = "We study ballistic electron transport through single or double barriers on monolayer MoS2, of width d, in the presence of a ferromagnetic field Moran antiferromagnetic field F. The total conductance,gc, its spin-up and spin-down components, and the polarization oscillate with d or the distance b between two barriers. The corresponding oscillation periods are different. The conductance g(c) versus M decreases in a fluctuating manner with a steep decline at certain value of M. As a function of M the spin polarization P-s oscillates before it becomes 100% while the valley polarization 13, oscillates and steadily increases.", publisher = "Elsevier", journal = "Physica E-Low-Dimensional Systems & Nanostructures", title = "Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2", volume = "75", pages = "317-321", doi = "10.1016/j.physe.2015.10.003" }
Krstajić, P., Vasilopoulos, P.,& Tahir, M.. (2016). Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2. in Physica E-Low-Dimensional Systems & Nanostructures Elsevier., 75, 317-321. https://doi.org/10.1016/j.physe.2015.10.003
Krstajić P, Vasilopoulos P, Tahir M. Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2. in Physica E-Low-Dimensional Systems & Nanostructures. 2016;75:317-321. doi:10.1016/j.physe.2015.10.003 .
Krstajić, Predrag, Vasilopoulos, Panagiotis, Tahir, Muhammad, "Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2" in Physica E-Low-Dimensional Systems & Nanostructures, 75 (2016):317-321, https://doi.org/10.1016/j.physe.2015.10.003 . .