Simulation and experimental study of maskless convex corner compensation in TMAH water solution
Samo za registrovane korisnike
2014
Autori
Smiljanić, MilčeRadjenovic, Branislav
Radmilović-Radjenović, Marija
Lazić, Žarko
Jović, Vesna
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Maskless etching with convex corner compensation in the form of a LT 100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in ...the corresponding simulated etching profiles obtained by the level set method.
Ključne reči:
simulation / level set method / maskless wet etching / TMAH / silicon crystallographic planesIzvor:
Journal of Micromechanics and Microengineering, 2014, 24, 11Izdavač:
- Iop Publishing Ltd, Bristol
Finansiranje / projekti:
- Mikro, nano-sistemi i senzori za primenu u elektroprivredi, procesnoj industriji i zaštiti životne sredine (RS-32008)
- Fundamentalni procesi i primene transporta čestica u neravnotežnim plazmama, trapovima i nanostrukturama (RS-171037)
DOI: 10.1088/0960-1317/24/11/115003
ISSN: 0960-1317
WoS: 000345262800003
Scopus: 2-s2.0-84914680395
Institucija/grupa
IHTMTY - JOUR AU - Smiljanić, Milče AU - Radjenovic, Branislav AU - Radmilović-Radjenović, Marija AU - Lazić, Žarko AU - Jović, Vesna PY - 2014 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1426 AB - Maskless etching with convex corner compensation in the form of a LT 100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method. PB - Iop Publishing Ltd, Bristol T2 - Journal of Micromechanics and Microengineering T1 - Simulation and experimental study of maskless convex corner compensation in TMAH water solution VL - 24 IS - 11 DO - 10.1088/0960-1317/24/11/115003 ER -
@article{ author = "Smiljanić, Milče and Radjenovic, Branislav and Radmilović-Radjenović, Marija and Lazić, Žarko and Jović, Vesna", year = "2014", abstract = "Maskless etching with convex corner compensation in the form of a LT 100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.", publisher = "Iop Publishing Ltd, Bristol", journal = "Journal of Micromechanics and Microengineering", title = "Simulation and experimental study of maskless convex corner compensation in TMAH water solution", volume = "24", number = "11", doi = "10.1088/0960-1317/24/11/115003" }
Smiljanić, M., Radjenovic, B., Radmilović-Radjenović, M., Lazić, Ž.,& Jović, V.. (2014). Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering Iop Publishing Ltd, Bristol., 24(11). https://doi.org/10.1088/0960-1317/24/11/115003
Smiljanić M, Radjenovic B, Radmilović-Radjenović M, Lazić Ž, Jović V. Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering. 2014;24(11). doi:10.1088/0960-1317/24/11/115003 .
Smiljanić, Milče, Radjenovic, Branislav, Radmilović-Radjenović, Marija, Lazić, Žarko, Jović, Vesna, "Simulation and experimental study of maskless convex corner compensation in TMAH water solution" in Journal of Micromechanics and Microengineering, 24, no. 11 (2014), https://doi.org/10.1088/0960-1317/24/11/115003 . .