Simulation and experimental study of maskless convex corner compensation in TMAH water solution
Само за регистроване кориснике
2014
Аутори
Smiljanić, MilčeRadjenovic, Branislav
Radmilović-Radjenović, Marija
Lazić, Žarko
Jović, Vesna
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Maskless etching with convex corner compensation in the form of a LT 100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in ...the corresponding simulated etching profiles obtained by the level set method.
Кључне речи:
simulation / level set method / maskless wet etching / TMAH / silicon crystallographic planesИзвор:
Journal of Micromechanics and Microengineering, 2014, 24, 11Издавач:
- Iop Publishing Ltd, Bristol
Финансирање / пројекти:
- Микро, нано-системи и сензори за примену у електропривреди, процесној индустрији и заштити животне средине (RS-32008)
- Фундаментални процеси и примене транспорта честица у неравнотежним плазмама, траповима и наноструктурама (RS-171037)
DOI: 10.1088/0960-1317/24/11/115003
ISSN: 0960-1317
WoS: 000345262800003
Scopus: 2-s2.0-84914680395
Институција/група
IHTMTY - JOUR AU - Smiljanić, Milče AU - Radjenovic, Branislav AU - Radmilović-Radjenović, Marija AU - Lazić, Žarko AU - Jović, Vesna PY - 2014 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/1426 AB - Maskless etching with convex corner compensation in the form of a LT 100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method. PB - Iop Publishing Ltd, Bristol T2 - Journal of Micromechanics and Microengineering T1 - Simulation and experimental study of maskless convex corner compensation in TMAH water solution VL - 24 IS - 11 DO - 10.1088/0960-1317/24/11/115003 ER -
@article{ author = "Smiljanić, Milče and Radjenovic, Branislav and Radmilović-Radjenović, Marija and Lazić, Žarko and Jović, Vesna", year = "2014", abstract = "Maskless etching with convex corner compensation in the form of a LT 100 > oriented beam is investigated using both experiments and simulations. The maskless convex corner compensation technique is defined as a combination of masked and maskless anisotropic etching of {1 0 0} silicon in 25 wt% TMAH water solution at a temperature of 80 degrees C. This technique enables fabrication of three-level micromachined silicon structures with compensated convex corners at the bottom of the etched structure. All crystallographic planes that appear during etching are determined and their etch rates are used to calculate the etch rate value in an arbitrary crystallographic direction necessary for simulation by an interpolation procedure. A 3D simulation of the profile evolution of the etched structure during masked and maskless etching of silicon based on the level set method is presented. All crystallographic planes of the etched silicon structures determined in the experiment are recognized in the corresponding simulated etching profiles obtained by the level set method.", publisher = "Iop Publishing Ltd, Bristol", journal = "Journal of Micromechanics and Microengineering", title = "Simulation and experimental study of maskless convex corner compensation in TMAH water solution", volume = "24", number = "11", doi = "10.1088/0960-1317/24/11/115003" }
Smiljanić, M., Radjenovic, B., Radmilović-Radjenović, M., Lazić, Ž.,& Jović, V.. (2014). Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering Iop Publishing Ltd, Bristol., 24(11). https://doi.org/10.1088/0960-1317/24/11/115003
Smiljanić M, Radjenovic B, Radmilović-Radjenović M, Lazić Ž, Jović V. Simulation and experimental study of maskless convex corner compensation in TMAH water solution. in Journal of Micromechanics and Microengineering. 2014;24(11). doi:10.1088/0960-1317/24/11/115003 .
Smiljanić, Milče, Radjenovic, Branislav, Radmilović-Radjenović, Marija, Lazić, Žarko, Jović, Vesna, "Simulation and experimental study of maskless convex corner compensation in TMAH water solution" in Journal of Micromechanics and Microengineering, 24, no. 11 (2014), https://doi.org/10.1088/0960-1317/24/11/115003 . .