Show simple item record

dc.creatorRamović, R.
dc.creatorJevtić, M.
dc.creatorHadži-Vuković, J.
dc.creatorRanđelović, Danijela
dc.date.accessioned2019-01-30T17:10:45Z
dc.date.available2019-01-30T17:10:45Z
dc.date.issued2002
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/89
dc.description.abstractThis paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.en
dc.publisherIEEE Computer Society
dc.rightsrestrictedAccess
dc.source23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
dc.titleA novel analytical model of a SiC MOSFETen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractРанђеловић, Данијела; Хаджи-Вуковић, Ј.; Јевтић, М.; Рамовић, Р.;
dc.citation.volume2
dc.citation.spage447
dc.citation.epage450
dc.citation.other2: 447-450
dc.identifier.doi10.1109/MIEL.2002.1003295
dc.identifier.rcubConv_4053
dc.identifier.scopus2-s2.0-15744373355
dc.type.versionpublishedVersion


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record