A novel analytical model of a SiC MOSFET
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2002
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This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.
Ključne reči:
Analytical models / Silicon carbide / MOSFET circuits / Temperature dependence / Semiconductor process modeling / Mathematical model / Current-voltage characteristics / Transconductance / Threshold voltage / ImpuritiesIzvor:
23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2002, 2, 447-450Izdavač:
- IEEE Computer Society
Institucija/grupa
IHTMTY - CONF AU - Ramović, R. AU - Jevtić, M. AU - Hadži-Vuković, J. AU - Randjelović, Danijela PY - 2002 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/89 AB - This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed. PB - IEEE Computer Society C3 - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings T1 - A novel analytical model of a SiC MOSFET VL - 2 SP - 447 EP - 450 DO - 10.1109/MIEL.2002.1003295 ER -
@conference{ author = "Ramović, R. and Jevtić, M. and Hadži-Vuković, J. and Randjelović, Danijela", year = "2002", abstract = "This paper presents a novel analytical model for simulation of characteristics of a n-channel MOSFET based on silicon-carbide (SiC). Using known experimental results, a semiempirical relation for carrier mobility (/spl mu/) dependence on electric field intensity, dopant concentration and temperature was formulated. Based on this relation appropriate analytical mathematical-physical model for simulation of current-voltage characteristics, transconductance and conductance of MOSFET were developed. All models were formulated taking into account, among other effects, the dependence of threshold voltage on temperature and impurity concentration in the channel, as well as the effect of the channel narrowing. Using the proposed model a simulation algorithm was designed and a simulation of the MOSFET's performance was performed. Results of the simulation are graphically presented in and discussed.", publisher = "IEEE Computer Society", journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings", title = "A novel analytical model of a SiC MOSFET", volume = "2", pages = "447-450", doi = "10.1109/MIEL.2002.1003295" }
Ramović, R., Jevtić, M., Hadži-Vuković, J.,& Randjelović, D.. (2002). A novel analytical model of a SiC MOSFET. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings IEEE Computer Society., 2, 447-450. https://doi.org/10.1109/MIEL.2002.1003295
Ramović R, Jevtić M, Hadži-Vuković J, Randjelović D. A novel analytical model of a SiC MOSFET. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;2:447-450. doi:10.1109/MIEL.2002.1003295 .
Ramović, R., Jevtić, M., Hadži-Vuković, J., Randjelović, Danijela, "A novel analytical model of a SiC MOSFET" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2 (2002):447-450, https://doi.org/10.1109/MIEL.2002.1003295 . .