Приказ основних података о документу

dc.creatorTodorović, D. M.
dc.creatorSmiljanić, Miloljub
dc.date.accessioned2019-01-30T17:10:44Z
dc.date.available2019-01-30T17:10:44Z
dc.date.issued2002
dc.identifier.isbn0-7803-7235-2
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/88
dc.description.abstractThe spectral and dynamic characteristics of surface energy states on Si wafer are investigated by photoacoustic (PA) spectroscopy. The PA spectra were measured as a function of the wavelength and modulation frequency of excitation optical beam by PA spectrometer. The PA amplitude spectra of Si samples (n-Si wafer, 500 ωcm) with various surface qualities were studied at room temperature in the range of the excitation optical energy beam from 0.7 to 1.5 eV and for various modulation frequencies (10, 40 and 160 Hz). The difference PA amplitude spectra of incoming Si wafer and Si wafer with mechanically roughened surface for various modulation frequencies indicate the energy distribution and the dynamics of the surface electronic states (SES).en
dc.publisherIEEE Computer Society
dc.rightsrestrictedAccess
dc.source23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
dc.subjectEnergy states
dc.subjectSpectroscopy
dc.subjectOptical surface waves
dc.subjectFrequency modulation
dc.subjectOptical modulation
dc.subjectOptical beams
dc.titleInvestigation of surface energy states on Si by photoacoustic spectroscopyen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милољуб; Тодоровић, Д. М.;
dc.citation.volume1
dc.citation.spage397
dc.citation.epage400
dc.citation.other1: 397-400
dc.identifier.doi10.1109/MIEL.2002.1003221
dc.identifier.scopus2-s2.0-84906703552
dc.type.versionpublishedVersion


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Приказ основних података о документу