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Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon
dc.creator | Jović, Vesna | |
dc.creator | Lamovec, Jelena | |
dc.creator | Smiljanić, Milče | |
dc.creator | Popović, Mirjana | |
dc.date.accessioned | 2019-01-30T17:25:07Z | |
dc.date.available | 2019-01-30T17:25:07Z | |
dc.date.issued | 2010 | |
dc.identifier.isbn | 978-142447201-7 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/757 | |
dc.description.abstract | The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found. | en |
dc.relation | info:eu-repo/grantAgreement/MESTD/MPN2006-2010/11025/RS// | |
dc.rights | restrictedAccess | |
dc.source | 27th International Conference on Microelectronics, MIEL 2010 - Proceedings | |
dc.title | Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon | en |
dc.type | conferenceObject | |
dc.rights.license | ARR | |
dcterms.abstract | Смиљанић, Милче; Јовић, Весна; Ламовец, Јелена; Поповић, Мина; | |
dc.citation.spage | 243 | |
dc.citation.epage | 246 | |
dc.citation.other | : 243-246 | |
dc.identifier.doi | 10.1109/MIEL.2010.5490489 | |
dc.identifier.scopus | 2-s2.0-77955182615 | |
dc.type.version | publishedVersion |