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dc.creatorJović, Vesna
dc.creatorLamovec, Jelena
dc.creatorSmiljanić, Milče
dc.creatorPopović, Mina
dc.date.accessioned2019-01-30T17:25:07Z
dc.date.available2019-01-30T17:25:07Z
dc.date.issued2010
dc.identifier.isbn978-142447201-7
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/757
dc.description.abstractThe paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/11025/RS//
dc.rightsrestrictedAccess
dc.source27th International Conference on Microelectronics, MIEL 2010 - Proceedings
dc.titleMicromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented siliconen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractСмиљанић, Милче; Јовић, Весна; Ламовец, Јелена; Поповић, Мина;
dc.citation.spage243
dc.citation.epage246
dc.citation.other: 243-246
dc.identifier.doi10.1109/MIEL.2010.5490489
dc.identifier.rcubConv_4243
dc.identifier.scopus2-s2.0-77955182615
dc.type.versionpublishedVersion


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