Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon
Abstract
The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.
Source:
27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 2010, 243-246Funding / projects:
- Inteligentni industrijski transmiteri na bazi sopstvenih IHTM senzora (RS-MESTD-MPN2006-2010-11025)
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Institution/Community
IHTMTY - CONF AU - Jović, Vesna AU - Lamovec, Jelena AU - Smiljanić, Milče AU - Popović, Mirjana PY - 2010 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/757 AB - The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found. C3 - 27th International Conference on Microelectronics, MIEL 2010 - Proceedings T1 - Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon SP - 243 EP - 246 DO - 10.1109/MIEL.2010.5490489 ER -
@conference{ author = "Jović, Vesna and Lamovec, Jelena and Smiljanić, Milče and Popović, Mirjana", year = "2010", abstract = "The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along LT 110> direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.", journal = "27th International Conference on Microelectronics, MIEL 2010 - Proceedings", title = "Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon", pages = "243-246", doi = "10.1109/MIEL.2010.5490489" }
Jović, V., Lamovec, J., Smiljanić, M.,& Popović, M.. (2010). Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon. in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, 243-246. https://doi.org/10.1109/MIEL.2010.5490489
Jović V, Lamovec J, Smiljanić M, Popović M. Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon. in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings. 2010;:243-246. doi:10.1109/MIEL.2010.5490489 .
Jović, Vesna, Lamovec, Jelena, Smiljanić, Milče, Popović, Mirjana, "Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon" in 27th International Conference on Microelectronics, MIEL 2010 - Proceedings (2010):243-246, https://doi.org/10.1109/MIEL.2010.5490489 . .