Far infrared properties of PbTe doped with Hg
АуториNikolic, P. M.
Vujatovic, S. S.
Paraskevopoulos, K. M.
Zorba, T. T.
Aleksić, Obrad S.
Nikolic, M. Vesna
Чланак у часопису (Објављена верзија)
МетаподациПриказ свих података о документу
Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Кључне речи:PbTe / Infrared / Ag-doping / Hg-doping
Извор:Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153
- National Institute of Optoelectronics