Far infrared properties of PbTe doped with Hg
AuthorsNikolic, P. M.
Vujatovic, S. S.
Paraskevopoulos, K. M.
Zorba, T. T.
Aleksić, Obrad S.
Nikolic, M. Vesna
Article (Published version)
MetadataShow full item record
Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Keywords:PbTe / Infrared / Ag-doping / Hg-doping
Source:Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153
- National Institute of Optoelectronics