Приказ основних података о документу

dc.creatorSmiljanić, Milče M.
dc.creatorLazić, Žarko
dc.creatorJović, Vesna
dc.creatorRadjenović, Branislav
dc.creatorRadmilović-Radjenović, Marija
dc.date.accessioned2020-04-20T16:30:36Z
dc.date.available2020-04-20T16:30:36Z
dc.date.issued2020
dc.identifier.issn2072-666X
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/3490
dc.description.abstractThis paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.en
dc.language.isoensr
dc.publisherMDPIsr
dc.relationThe authors acknowledge funding provided by the Institute of Chemistry, Technology and Metallurgy and the Institute of Physics Belgrade, through the grant by the Ministry of Education, Science and Technological Development of the Republic of Serbia.sr
dc.rightsopenAccesssr
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceMicromachinessr
dc.subjectNo convex corner compensationsr
dc.subjectParallelogramsr
dc.subjectSiliconsr
dc.subjectWet etchingsr
dc.subjectTetramethylammonium hydroxide (TMAH)sr
dc.titleEtching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °Cen
dc.typearticlesr
dc.rights.licenseBYsr
dcterms.abstractЛазић, Жарко; Радјеновић, Бранислав; Радмиловић-Радјеновић, Марија; Јовић, Весна; Смиљанић, Милче М.;
dc.rights.holderAuthorssr
dc.citation.volume11
dc.citation.issue3
dc.citation.spage253
dc.citation.rankM22~
dc.identifier.doi10.3390/mi11030253
dc.identifier.fulltexthttps://cer.ihtm.bg.ac.rs/bitstream/id/16341/micromachines-11-00253-v2.pdf
dc.identifier.scopus2-s2.0-85082854191
dc.identifier.wos000613507100001
dc.type.versionpublishedVersionsr


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Приказ основних података о документу