Show simple item record

dc.creatorPiotrowski, J.
dc.creatorĐurić, Zoran G.
dc.creatorGalus, W.
dc.creatorJović, V.
dc.creatorGrudzień, M.
dc.creatorDjinović, Z.
dc.creatorNowak, Z.
dc.date.accessioned2019-10-22T09:20:43Z
dc.date.available2019-10-22T09:20:43Z
dc.date.issued1987
dc.identifier.issn00220248
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3157
dc.description.abstractLowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.
dc.publisherElsevier BVen
dc.rightsrestrictedAccess
dc.sourceJournal of Crystal Growthen
dc.titleComposition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxyen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractГрудзиеń, М.; Ноwак, З.; Дјурић, З.; Јовић, В.; Пиотроwски, Ј.; Галус, W.; Дјиновић, З.;
dc.citation.volume83
dc.citation.issue1
dc.citation.spage122
dc.citation.epage126
dc.identifier.doi10.1016/0022-0248(87)90512-4
dc.identifier.scopus2-s2.0-0023347893
dc.type.versionpublishedVersion


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record