Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy
Abstract
Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.
Source:
Journal of Crystal Growth, 1987, 83, 1, 122-126Publisher:
- Elsevier
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IHTMTY - JOUR AU - Piotrowski, J. AU - Đurić, Zoran G. AU - Galus, W. AU - Jović, Vesna AU - Grudzień, M. AU - Djinović, Z. AU - Nowak, Z. PY - 1987 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3157 AB - Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed. PB - Elsevier T2 - Journal of Crystal Growth T1 - Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy VL - 83 IS - 1 SP - 122 EP - 126 DO - 10.1016/0022-0248(87)90512-4 ER -
@article{ author = "Piotrowski, J. and Đurić, Zoran G. and Galus, W. and Jović, Vesna and Grudzień, M. and Djinović, Z. and Nowak, Z.", year = "1987", abstract = "Lowered Hg pressure due to the Hg loss out of the growth chamber strongly influences the properties of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy (ISO VPE). Conventional LPE slider systems are usually too leaky to growth low x-value (0.3-0.2) with proper thickness ( ≈ 20 μm). We developed a new semiclosed ISO VPE system which practically eliminated Hg loss. Layers of any desired x-value with thickness from 1 up to 100 μm were grown. Methods of layer thickness and composition control are proposed.", publisher = "Elsevier", journal = "Journal of Crystal Growth", title = "Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy", volume = "83", number = "1", pages = "122-126", doi = "10.1016/0022-0248(87)90512-4" }
Piotrowski, J., Đurić, Z. G., Galus, W., Jović, V., Grudzień, M., Djinović, Z.,& Nowak, Z.. (1987). Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy. in Journal of Crystal Growth Elsevier., 83(1), 122-126. https://doi.org/10.1016/0022-0248(87)90512-4
Piotrowski J, Đurić ZG, Galus W, Jović V, Grudzień M, Djinović Z, Nowak Z. Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy. in Journal of Crystal Growth. 1987;83(1):122-126. doi:10.1016/0022-0248(87)90512-4 .
Piotrowski, J., Đurić, Zoran G., Galus, W., Jović, Vesna, Grudzień, M., Djinović, Z., Nowak, Z., "Composition and thickness control of CdxHg1-xTe layers grown by open tube isothermal vapour phase epitaxy" in Journal of Crystal Growth, 83, no. 1 (1987):122-126, https://doi.org/10.1016/0022-0248(87)90512-4 . .