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Electron transit time through depletion layer of GaInAs pn junction
dc.creator | Smiljanić, Miloljub | |
dc.creator | Đurić, Zoran G. | |
dc.creator | Lazić, Žarko | |
dc.date.accessioned | 2019-09-10T16:00:57Z | |
dc.date.available | 2019-09-10T16:00:57Z | |
dc.date.issued | 1989 | |
dc.identifier.issn | 0013-5194 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/3089 | |
dc.description.abstract | Using an empirical formula for the electron velocity, the transist time through a Gao. 47Ino. 53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Gao.47InO53As layer on InP substrate. | en |
dc.publisher | Institution of Engineering and Technology (IET) | en |
dc.rights | restrictedAccess | |
dc.source | Electronics Letters | en |
dc.title | Electron transit time through depletion layer of GaInAs pn junction | en |
dc.type | article | en |
dc.rights.license | ARR | |
dcterms.abstract | Смиљанић, Милољуб; Дјурић, З.; Лазић, З.; | |
dc.rights.holder | Institution of Engineering and Technology | |
dc.citation.volume | 25 | |
dc.citation.issue | 2 | |
dc.citation.spage | 150 | |
dc.identifier.doi | 10.1049/el:19890109 | |
dc.identifier.scopus | 2-s2.0-0024302313 | |
dc.type.version | publishedVersion |