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dc.creatorVujanić, Aleksandar
dc.creatorSmiljanić, Miloljub
dc.date.accessioned2019-09-10T13:36:27Z
dc.date.available2019-09-10T13:36:27Z
dc.date.issued1995
dc.identifier.issn00262692
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3072
dc.description.abstractA numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.
dc.publisherElsevier BVen
dc.rightsrestrictedAccess
dc.sourceMicroelectronics Journalen
dc.subjectAnisotropic surface etching
dc.subjectPhotodiode quantum efficiency
dc.subjectQuantum efficiency
dc.titlePhotodiode quantum efficiency optimization using spherical pits on active surfacesen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractВујанић, Aлександар; Смиљанић, Милољуб;
dc.rights.holderElsevier
dc.citation.volume26
dc.citation.issue5
dc.citation.spage413
dc.citation.epage419
dc.identifier.doi10.1016/0026-2692(95)98943-L
dc.identifier.scopus2-s2.0-0029345113
dc.type.versionpublishedVersion


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