Photodiode quantum efficiency optimization using spherical pits on active surfaces
Samo za registrovane korisnike
1995
Članak u časopisu (Objavljena verzija)
,
Elsevier
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.
Ključne reči:
Anisotropic surface etching / Photodiode quantum efficiency / Quantum efficiencyIzvor:
Microelectronics Journal, 1995, 26, 5, 413-419Izdavač:
- Elsevier
Institucija/grupa
IHTMTY - JOUR AU - Vujanić, Aleksandar AU - Smiljanić, Miloljub PY - 1995 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/3072 AB - A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry. PB - Elsevier T2 - Microelectronics Journal T1 - Photodiode quantum efficiency optimization using spherical pits on active surfaces VL - 26 IS - 5 SP - 413 EP - 419 DO - 10.1016/0026-2692(95)98943-L ER -
@article{ author = "Vujanić, Aleksandar and Smiljanić, Miloljub", year = "1995", abstract = "A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.", publisher = "Elsevier", journal = "Microelectronics Journal", title = "Photodiode quantum efficiency optimization using spherical pits on active surfaces", volume = "26", number = "5", pages = "413-419", doi = "10.1016/0026-2692(95)98943-L" }
Vujanić, A.,& Smiljanić, M.. (1995). Photodiode quantum efficiency optimization using spherical pits on active surfaces. in Microelectronics Journal Elsevier., 26(5), 413-419. https://doi.org/10.1016/0026-2692(95)98943-L
Vujanić A, Smiljanić M. Photodiode quantum efficiency optimization using spherical pits on active surfaces. in Microelectronics Journal. 1995;26(5):413-419. doi:10.1016/0026-2692(95)98943-L .
Vujanić, Aleksandar, Smiljanić, Miloljub, "Photodiode quantum efficiency optimization using spherical pits on active surfaces" in Microelectronics Journal, 26, no. 5 (1995):413-419, https://doi.org/10.1016/0026-2692(95)98943-L . .