Photodiode quantum efficiency optimization using spherical pits on active surfaces
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A numerical model of a photodiode with etched spherical pits on an active surface has been developed. Several geometrical parameters (radius of curvature, depth and arrangement of spherical pits, sample thickness and area, and thickness of the anti-reflection layer) were varied and their influence on the quantum efficiency of the structure was considered. It has been shown that the photodiode quantum efficiency can be optimized by the proper choice of these parameters. From the technological point of view, it is very important that the optimized quantum efficiency can be achieved without a strict definition of the device geometry.
Кључне речи:Anisotropic surface etching / Photodiode quantum efficiency / Quantum efficiency
Извор:Microelectronics Journal, 1995, 26, 5, 413-419
- Elsevier BV