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dc.creatorĐurić, Zoran G.
dc.creatorJakšić, Zoran
dc.creatorVujanić, A.
dc.creatorSmiljanić, Miloljub
dc.date.accessioned2019-09-10T13:29:52Z
dc.date.available2019-09-10T13:29:52Z
dc.date.issued1993
dc.identifier.issn00200891
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/3071
dc.description.abstractUsing the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant.
dc.publisherElsevier BVen
dc.rightsrestrictedAccess
dc.sourceInfrared Physicsen
dc.subjectAuger electron spectroscopy
dc.subjectSemiconductor devices
dc.subjectBeattie-Landsberg expression
dc.titleA simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductorsen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractЈакшић, Зоран; Вујанић, A.; Смиљанић, Милољуб; Дјурић, Зоран Г.;
dc.rights.holderElsevier
dc.citation.volume34
dc.citation.issue6
dc.citation.spage601
dc.citation.epage605
dc.description.otherErratum: [http://cer.ihtm.bg.ac.rs/handle/123456789/3079]
dc.identifier.doi10.1016/0020-0891(93)90118-Q
dc.identifier.scopus2-s2.0-0027813212
dc.type.versionpublishedVersion


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