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A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors
dc.creator | Đurić, Zoran G. | |
dc.creator | Jakšić, Zoran | |
dc.creator | Vujanić, A. | |
dc.creator | Smiljanić, Miloljub | |
dc.date.accessioned | 2019-09-10T13:29:52Z | |
dc.date.available | 2019-09-10T13:29:52Z | |
dc.date.issued | 1993 | |
dc.identifier.issn | 00200891 | |
dc.identifier.uri | https://cer.ihtm.bg.ac.rs/handle/123456789/3071 | |
dc.description.abstract | Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant. | en |
dc.publisher | Elsevier | en |
dc.rights | restrictedAccess | |
dc.source | Infrared Physics | en |
dc.subject | Auger electron spectroscopy | |
dc.subject | Semiconductor devices | |
dc.subject | Beattie-Landsberg expression | |
dc.title | A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors | en |
dc.type | article | en |
dc.rights.license | ARR | |
dcterms.abstract | Јакшић, Зоран; Вујанић, A.; Смиљанић, Милољуб; Дјурић, Зоран Г.; | |
dc.rights.holder | Elsevier | |
dc.citation.volume | 34 | |
dc.citation.issue | 6 | |
dc.citation.spage | 601 | |
dc.citation.epage | 605 | |
dc.description.other | Erratum: [http://cer.ihtm.bg.ac.rs/handle/123456789/3079] | |
dc.identifier.doi | 10.1016/0020-0891(93)90118-Q | |
dc.identifier.scopus | 2-s2.0-0027813212 | |
dc.type.version | publishedVersion |