Приказ основних података о документу

dc.creatorDojčinović, I.P.
dc.creatorKuraica, Milorad M.
dc.creatorRandjelović, Danijela
dc.creatorMati, Ć M.
dc.creatorPuri, Ć J.
dc.date.accessioned2019-01-30T17:14:57Z
dc.date.available2019-01-30T17:14:57Z
dc.date.issued2006
dc.identifier.urihttps://cer.ihtm.bg.ac.rs/handle/123456789/284
dc.description.abstractSilicon single crystal surfaces have been modified by supersonic compression plasma flows (CPF) action. Triangular and rhombic regular fracture features are obtained on the Si (111), while rectangular ones are produced on Si (100) surface. Some of these regular structures can become free from the underlying bulk, formed as blocks ejected from the surface. Surface cleavage and exfoliation phenomena as the results of specific conditions during CPF interaction on silicon surface are, also, observed. Such conditions are the results of rapid heating and melting of surface layer, long existence of molten layer (∼40 μs) and fast cooling and recrystalisation taking place under the high dynamic pressure and thermodynamic parameters gradients.en
dc.rightsrestrictedAccess
dc.source25th International Conference on Microelectronics, MIEL 2006 - Proceedings
dc.titleSilicon surface exfoliation under compression plasma flow actionen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractПури, Ћ Ј.; Дојчиновић, И.П.; Кураица, М.М.; Ранђеловић, Данијела; Мати, Ћ М.;
dc.citation.spage145
dc.citation.epage148
dc.citation.other: 145-148
dc.identifier.doi10.1109/ICMEL.2006.1650915
dc.identifier.scopus2-s2.0-77956512249
dc.type.versionpublishedVersion


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Приказ основних података о документу