Silicon surface exfoliation under compression plasma flow action
Само за регистроване кориснике
2006
Конференцијски прилог (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Silicon single crystal surfaces have been modified by supersonic compression plasma flows (CPF) action. Triangular and rhombic regular fracture features are obtained on the Si (111), while rectangular ones are produced on Si (100) surface. Some of these regular structures can become free from the underlying bulk, formed as blocks ejected from the surface. Surface cleavage and exfoliation phenomena as the results of specific conditions during CPF interaction on silicon surface are, also, observed. Such conditions are the results of rapid heating and melting of surface layer, long existence of molten layer (∼40 μs) and fast cooling and recrystalisation taking place under the high dynamic pressure and thermodynamic parameters gradients.
Извор:
25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 2006, 145-148Институција/група
IHTMTY - CONF AU - Dojčinović, I.P. AU - Kuraica, Milorad M. AU - Randjelović, Danijela AU - Mati, Ć M. AU - Puri, Ć J. PY - 2006 UR - https://cer.ihtm.bg.ac.rs/handle/123456789/284 AB - Silicon single crystal surfaces have been modified by supersonic compression plasma flows (CPF) action. Triangular and rhombic regular fracture features are obtained on the Si (111), while rectangular ones are produced on Si (100) surface. Some of these regular structures can become free from the underlying bulk, formed as blocks ejected from the surface. Surface cleavage and exfoliation phenomena as the results of specific conditions during CPF interaction on silicon surface are, also, observed. Such conditions are the results of rapid heating and melting of surface layer, long existence of molten layer (∼40 μs) and fast cooling and recrystalisation taking place under the high dynamic pressure and thermodynamic parameters gradients. C3 - 25th International Conference on Microelectronics, MIEL 2006 - Proceedings T1 - Silicon surface exfoliation under compression plasma flow action SP - 145 EP - 148 DO - 10.1109/ICMEL.2006.1650915 ER -
@conference{ author = "Dojčinović, I.P. and Kuraica, Milorad M. and Randjelović, Danijela and Mati, Ć M. and Puri, Ć J.", year = "2006", abstract = "Silicon single crystal surfaces have been modified by supersonic compression plasma flows (CPF) action. Triangular and rhombic regular fracture features are obtained on the Si (111), while rectangular ones are produced on Si (100) surface. Some of these regular structures can become free from the underlying bulk, formed as blocks ejected from the surface. Surface cleavage and exfoliation phenomena as the results of specific conditions during CPF interaction on silicon surface are, also, observed. Such conditions are the results of rapid heating and melting of surface layer, long existence of molten layer (∼40 μs) and fast cooling and recrystalisation taking place under the high dynamic pressure and thermodynamic parameters gradients.", journal = "25th International Conference on Microelectronics, MIEL 2006 - Proceedings", title = "Silicon surface exfoliation under compression plasma flow action", pages = "145-148", doi = "10.1109/ICMEL.2006.1650915" }
Dojčinović, I.P., Kuraica, M. M., Randjelović, D., Mati, Ć. M.,& Puri, Ć. J.. (2006). Silicon surface exfoliation under compression plasma flow action. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, 145-148. https://doi.org/10.1109/ICMEL.2006.1650915
Dojčinović I, Kuraica MM, Randjelović D, Mati ĆM, Puri ĆJ. Silicon surface exfoliation under compression plasma flow action. in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings. 2006;:145-148. doi:10.1109/ICMEL.2006.1650915 .
Dojčinović, I.P., Kuraica, Milorad M., Randjelović, Danijela, Mati, Ć M., Puri, Ć J., "Silicon surface exfoliation under compression plasma flow action" in 25th International Conference on Microelectronics, MIEL 2006 - Proceedings (2006):145-148, https://doi.org/10.1109/ICMEL.2006.1650915 . .