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dc.creatorSmiljanić, Milče
dc.creatorLazić, Žarko
dc.creatorRadjenović, Branislav
dc.creatorRadmilović-Radjenović, Marija
dc.creatorJović, Vesna
dc.date.accessioned2019-03-29T06:28:14Z
dc.date.available2019-03-29T06:28:14Z
dc.date.issued2019
dc.identifier.issn2072-666X
dc.identifier.urihttp://www.mdpi.com/2072-666X/10/2/102
dc.identifier.urihttp://cer.ihtm.bg.ac.rs/handle/123456789/2640
dc.description.abstractSquares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.
dc.publisherMDPI AG, Basel, Switzerland
dc.relationinfo:eu-repo/grantAgreement/MESTD/Technological Development (TD or TR)/32008/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Basic Research (BR or ON)/171036/RS//
dc.rightsopenAccess
dc.sourceMicromachines
dc.sourceMicromachines
dc.subject3D simulation
dc.subjectLevel-set method
dc.subjectSilicon
dc.subjectTetramethylammonium hydroxide (TMAH)
dc.subjectWet etching
dc.titleEvolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH
dc.typearticleen
dc.rights.licenseBY
dcterms.abstractЈовић, Весна; Радмиловић-Радјеновић, Марија; Смиљанић, Милче; Лазић, Жарко; Радјеновић, Бранислав;
dc.citation.volume10
dc.citation.issue2
dc.citation.spage102
dc.citation.rankM22~
dc.identifier.doi10.3390/mi10020102
dc.identifier.fulltexthttp://cer.ihtm.bg.ac.rs//bitstream/id/6222/micromachines-10-00102.pdf
dc.identifier.scopus2-s2.0-85061206432
dc.identifier.wos000460798200027
dc.type.versionpublishedVersion


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